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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. V. Govorkov »
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A. V. Gorbunov < A. V. Govorkov < A. V. Gribanov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000482 (2004) Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes
000756 (2002-04-15) Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing
000787 (2002) Studies of deep centers in dilute GaAsN and InGaAsN films grown by molecular beam epitaxy
000800 (2002) Optical properties and defects in GaAsN and InGaAsN films and quantum well structures
000819 (2002) Interface properties and deep levels in InGaAsN/GaAs and GaAsN/GaAs heterojunctions
001157 (1996-09) Optical and luminescence properties of stressed layers with quantum wells in GaInAsP/InP heterostructures grown by MOS hydride epitaxy
001221 (1996) The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD
001260 (1996) Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS
001387 (1995) Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001400 (1994-12-01) Hydrogen passivation effects in InGaAlP and InGaP
001470 (1994) The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy
001476 (1994) Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
6Photoluminescence
5III-V compound
4Gallium phosphides
4Indium phosphides
3Aluminium phosphides
3CV characteristic
3Experiments
3Quaternary compound
3Quaternary compounds
3Semiconducting indium gallium arsenide
2Cathodoluminescence
2DLTS
2Deep level transient spectroscopy
2Electrical properties
2Electron traps
2Film growth
2Gallium Antimonides
2Gallium arsenides
2Heterojunctions
2Hydrogen
2III-V semiconductors
2IV characteristic
2Indium arsenides
2Light emitting diodes
2Passivation
2Semiconducting films
2Semiconductor materials
2Semiconductor quantum wells
2Solid solutions
2Temperature dependence
2Ternary compounds
2Thin films
2Voltage capacity curve
1Activation energy
1Aluminium Arsenides
1Aluminium Phosphides
1Annealing
1Annealing temperature
1Anodic oxide
1Band offset
1Barrier height
1Binary compound
1CVD
1Capacitance
1Carrier concentration
1Carrier density
1Composition
1Composition effect
1Conduction band
1Conductivity
1Contamination
1Current voltage characteristics
1Defects
1Diodes
1Doping
1Dose rate
1Electric breakdown of solids
1Electric resistivity
1Electric space charge
1Electrical characteristic
1Electroluminescence
1Electronic properties
1Energy band
1Energy levels
1Energy-level transitions
1Epitaxial films
1Epitaxy
1External fields
1Frequency characteristic
1Gadolinium additions
1Gallium Phosphides
1Gallium antimonides
1Gallium compounds
1Gallium nitrides
1Growth from solution
1Heterojunction
1Implantation
1Impurity states
1Indium Antimonides
1Indium Arsenides
1Indium Phosphides
1Indium antimonides
1Indium compounds
1Indium nitrides
1Interfaces (materials)
1MIS structure
1MOCVD coatings
1Magnetic field effects
1Magnetic ordering
1Manganese nitrides
1Manufacturing process
1Microcathodoluminescence
1Microelectronic fabrication
1Modulation
1Molecular beam epitaxy
1N-type conductors
1Optical properties
1Oxygen
1P-type conductors

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