Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. V. Germanenko »
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A. V. Geris < A. V. Germanenko < A. V. Gerus  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000371 (2005) Hole-hole interaction in a strained InxGa1-xAs two-dimensional system
000389 (2005) Antilocalization and spin-orbit coupling in the hole gas in strained GaAs/InxGa1-xAs/GaAs quantum well heterostructures
000438 (2004) Weak antilocalization in quantum wells in tilted magnetic fields
000442 (2004) Transverse negative magnetoresistance of two-dimensional structures in the presence of a strong in-plane magnetic field: Weak localization as a probe of interface roughness
000465 (2004) Magnetoresistance and dephasing in a two-dimensional electron gas at intermediate conductances
000544 (2003-06) Nonohmic Conductivity under Transition From Weak to Strong Localization in GaAs/InGaAs Structures with a Two-Dimensional Electron Gas
000548 (2003-05-15) Electron-electron interaction with decreasing conductance
000597 (2003) The conductivity of disordered 2D systems: from weak to strong localization
000738 (2002-06-15) Quantum corrections to conductivity: From weak to strong localization
000863 (2001-11-15) Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures
000A24 (2000-12-15) Low-field negative magnetoresistance in double-layer structures
000C91 (1999-05-15) Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states
001603 (1992) The conductivity anisotropy in uniaxially stressed p-InSb
001869 (1990) The influence of unixial stress on the hopping conductivity in p-InSb. The anisotropy of the hopping conductivity
001B26 (1988)
001C48 (1987)

List of associated KwdEn.i

Nombre de
documents
Descripteur
11Experimental study
11Gallium arsenides
8Electrical conductivity
6III-V semiconductors
6Indium arsenides
6Indium compounds
6Semiconductor materials
6Weak localisation
5Magnetic field effects
5Two-dimensional electron gas
4Binary compounds
4Hall effect
4Indium Antimonides
4Inorganic compound
4Magnetoresistance
4Quantum wells
4Ternary compounds
3Germanium
3P type conductivity
3Semiconductor heterojunctions
3Semiconductor quantum wells
2Acceptor center
2Anisotropy
2Doping
2Drude model
2Fermi level
2Heterostructures
2Quantum interference phenomena
2Roughness
2Spin relaxation
2Spin-orbit interactions
2Theoretical study
2Uniaxial stress
2Zeeman effect
1Anomaly
1Atomic force microscopy
1Ballistic transport
1Carrier lifetime
1Concentration
1Coulomb interaction
1Crystal growth from vapors
1Diffusion
1Disordered systems
1Dresselhaus effect
1Electron mobility
1Energy levels
1Exchange interactions (electron)
1Fermi liquid
1Field orientation
1Galvanomagnetic effects
1Hartree Fock equation
1Hole density
1Hole gas
1Hopping conduction
1Hopping conductivity
1Impurity conductivity
1Impurity ionization
1Impurity states
1Interface states
1Interfaces
1Interference
1Ionization potential
1Lead compounds
1Level splitting
1Low temperature
1MOVPE method
1Metal insulator transition
1Mott transition
1Nanostructured materials
1Negative magnetoresistance
1Piezoresistivity
1Property structure relationship
1Relaxation time
1Self consistency
1Semiconductor junctions
1Semiconductor metal transition
1Strained quantum well
1Temperature
1Temperature dependence
1Temperature effects
1Transverse field
1Tunnel effect
1Two-dimensional systems
1Uniaxial compression
1Uniaxial strain
1VPE
1Valence band
1Very low temperature
1Weak antilocalization
1weak localisation

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