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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. V. Anshon »
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A. V. Ankudinov < A. V. Anshon < A. V. Antonov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 6.
Ident.Authors (with country if any)Title
000E46 (1998-09) Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma
001461 (1994-01) Use of quantum-well structures to study defect formation at semiconductor surfaces
001532 (1993) Polarization dependence of the interband optical absorption by an InGaAs quantum well in GaAs
001636 (1992) Photoelectron phenomena in GaAs layers with a built-in surface quantum heterowell
001667 (1992) Intersubband absorption of infrared radiation in stressed quantum-well InxGa1-xAs-GaAs structures
001894 (1990) Photoelectric properties of epitaxial GaAs/InGaAs quantum-well heterostructures

List of associated KwdEn.i

Nombre de
documents		Descripteur
6Experimental study
4Semiconductor materials
3Gallium Arsenides
3Gallium Indium Arsenides Mixed
3Gallium arsenides
3Photoluminescence
2Indium arsenides
2Inorganic compound
2Quantum well
2Quantum wells
1Absorption spectra
1Argon ions
1Binary compounds
1Charge carrier recombination
1Crystal defects
1Defect states
1Diffusion
1Electric field
1Electron hole pair
1Electron-hole recombination
1Electronic transition
1Glow discharges
1Heterostructures
1III-V semiconductors
1Incidence angle
1Indium compounds
1Infrared absorption
1Infrared spectra
1Interband transition
1Interband transitions
1Oxidation
1Passivation
1Photoconductivity
1Photoelectric effect
1Photoelectron emission
1Photoelectronic properties
1Photovoltaic effects
1Physical radiation effects
1Plasma applications
1Polarized beams
1Polarized radiation
1Quantum size effect
1Semiconductor quantum wells
1Space charge
1Strained quantum well
1Surface structure
1Ternary compounds
1Theoretical study
1Uses

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