A. Tverjanovich < A. Tybulewicz < A. U. Mal Sagov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 112.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000F21 (1998)		Single-frequency λ = 1.06 μm semiconductor laser with a distributed Bragg mirror in an optical fibre
000F22 (1998)		Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate
000F63 (1998)		Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures
001090 (1997)		Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm
001123 (1997)		Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers
001225 (1996)		Spontaneous emission from a quantum-well GaN/InGaN/AlGaN heterostructure at high pump currents
001501 (1993)		Tunnel effect as the cause of the current limited by contact emission in an In2O3-ZnSe-(Zn1-xCdxTe)1-y(In2Te3)y-In heterostructure
001511 (1993)		Temperature dependence of the photoluminescence of modified InP:Sn crystals
001513 (1993)		Superconductivity and the distribution of the components in thin indium-doped PbzS1-zTe films
001514 (1993)		Structure of a resistive superconducting transition in a regular lattice of indium nanoparticles
001519 (1993)		Role of an additional extremum in the appearance of superconductivity in IV-VI semiconductors having resonant impurity states
001520 (1993)		Role of H2+ complexes in optimization of n-type InSb mixers in the millimeter wavelength range
001522 (1993)		Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions
001523 (1993)		Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001526 (1993)		Properties of epitaxial indium arsenide doped with rare-earth elements
001529 (1993)		Potosensitivity of n-Cd0.8Zn0.2S-p-CulnSe2 heterojunctions
001530 (1993)		Population inversion of spatial quantization levels in two-dimensional InAs/AlSb/GaSb systems
001532 (1993)		Polarization dependence of the interband optical absorption by an InGaAs quantum well in GaAs
001534 (1993)		Photomagnetic effect in n-type InSb subjected to strong electric and quantizing magnetic fields
001535 (1993)		Photoluminescence emitted by a quantum well with a hight photocarrier density
001547 (1993)		Mechanism of formation of a sulfide passivating coating on the surfaces of III-V semiconductors

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List of associated KwdEn.i

Nombre de documents	Descripteur
88	Experimental study
76	Semiconductor materials
75	Inorganic compound
34	Temperature
20	Indium
20	Low temperature
18	Electrical conductivity
18	Theoretical study
17	Heterojunction
17	Impurity
15	Charge carrier concentration
14	Gallium arsenides
13	Indium Phosphides
13	Indium arsenides
12	Gallium Arsenides
12	Photoluminescence
11	Hall effect
11	Impurity density
11	Indium Arsenides
11	Photoconductivity
11	Voltage current curve
10	Chemical composition
10	Indium Antimonides
10	Ternary compounds
9	Binary compounds
9	Gallium Indium Arsenides Mixed
9	Single crystal
9	Solid solution
8	Donor center
8	Doping
8	Electric field
8	Indium phosphides
7	Acceptor center
7	Infrared radiation
7	Thermal annealing
6	Charge carrier mobility
6	Illumination
6	Magnetic field
6	Magnetoconductivity
6	Tin Lead Tellurides Mixed
5	Aluminium arsenides
5	Copper Indium Selenides Mixed
5	Defect
5	Effective mass
5	Energy gap
5	Fermi level
5	Gallium Indium Antimonides arsenides Mixed
5	Impurity level
5	Indium antimonides
5	Quantum wells
5	Radiative recombination
5	Semiconductor lasers
5	Temperature dependence
5	Vacancy
5	Zinc Selenides
4	Activation energy
4	Band structure
4	Cadmium Mercury Tellurides Mixed
4	Charge carrier recombination
4	Compensation
4	Energy level
4	Epitaxial film
4	Indium Antimonides arsenides phosphides
4	Indium Oxides
4	Indium Selenides
4	Indium Sulfides
4	Indium Thallium Sulfides Mixed
4	Optical transition
4	Photoelectric current
4	Quantum well
4	Raman scattering
4	Semiconductor laser
4	Thin film
4	Tunnel effect
4	Valence band
3	Absorptance
3	Aluminium antimonides
3	Band splitting
3	Cadmium Indium Sulfides Mixed
3	Carrier density
3	Charge carrier
3	Charge carrier scattering
3	Concentration distribution
3	Conduction band
3	Critical field
3	Deep level
3	Energy levels
3	Exciton
3	Gallium Indium Arsenides phosphides Mixed
3	Gallium phosphides
3	Impurity states
3	Infrared reflection
3	Injection laser
3	Ion implantation
3	Irradiation
3	Laser beam
3	Magnetic field effects
3	Optical absorption
3	Phase transformation
3	Phonon mode

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