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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. T. Gorelenok »
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A. T. Denisov < A. T. Gorelenok < A. T. Gorelionok  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
001356 (1995) Rare-earth elements in the technology of InP, InGaAsP and devices based on these semiconductor compounds
001677 (1992) Gunn diodes made of n-InGaAs/n+InP heterostructures
001804 (1991) In0.53Ga0.47As/In0.88Ga0.12As0.23P0.77 heterostructres with a two-dimensional electron gas
001909 (1990) Investigation of the kinetics of the photoconductivity of short InP:Fe photoresistors
001910 (1990) Investigation of the influence of chemical treatment of InP on the surface recombination velocity by the Raman light scattering method
001930 (1990) Diagnostics of InGaAsP/InP heteroboundaries by Auger profiling of a chemical bevel
001A49 (1989)
001B20 (1988)
001B87 (1987) Peculiarities of liquid phase epitaxy in GaInPAs/InP lattice-matched heterostructures
001C81 (1987)
001C87 (1987)
001D55 (1986)
001E23 (1985)
001E69 (1984)
001E70 (1984)
001E71 (1984)
001E94 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
15Indium Phosphides
9Heterojunction
8Experimental study
8Gallium Indium Arsenides Mixed
7Gallium Indium Arsenides phosphides Mixed
7Inorganic compound
7Semiconductor materials
3P n junction
2Charge carrier concentration
2Charge carrier mobility
2Electron gas
2Epitaxy
2Growth from liquid
2Impurity
2Interface
2Iron
2Lanthanide
2Mismatch lattice
2Photoconductivity
2Solid solution
2Thin film
2Voltage current curve
1Absorption edge
1Anisotropy
1Auger electron spectrometry
1Background noise
1Binary compound
1Charge carrier recombination
1Charge carrier trapping
1Chemical composition
1Chemical etching
1Crystal growth
1Doping
1Double heterojunction
1Elastic deformation
1Electric breakdown
1Electric current
1Electrical characteristic
1Electrical conductivity
1Electrical instability
1Energy gap
1Epitaxial film
1Exciton
1Filament
1Gallium Arsenides
1Gunn diode
1Heterogeneity
1High temperature
1III-V compound
1Junction
1Lattice distortion
1Leakage current
1Liquid state
1Localized electron
1Low temperature
1Magnetic field
1Magnetoconductivity
1Measurement method
1Microelectronic fabrication
1Monochromatic radiation
1Multijunction structure
1N type conductivity
1Optical absorption
1Optical pulse
1Photoluminescence
1Photoresistor
1Plasmon
1Preparation
1Properties of materials
1Quantum Hall effect
1Quantum well
1Quaternary compound
1Raman scattering
1Recovery(properties)
1Review
1Selenium
1Shubnikov de Haas effect
1Single crystal
1Spectral line splitting
1Spin orbit interaction
1Substrate
1Suppression
1Surface recombination
1Surface treatment
1Thermal instability
1Thermal variation
1Thermodynamic analysis
1Thickness
1Transport process
1Tunnel effect
1Two dimensional model
1Two dimensional system
1Unsteady state

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