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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. S. Terekhov »
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A. S. Sysoljatin < A. S. Terekhov < A. S. Tregubova  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 4.
Ident.Authors (with country if any)Title
000880 (2001-09) Epitaxial Growth, Electronic Properties, and Photocathode Applications of Strained Pseudomorphic InGaAsP/GaAs Layers
001009 (1997-08-01) Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films
001229 (1996) Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films
001369 (1995) Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources

List of associated KwdEn.i

Nombre de
documents		Descripteur
4Experimental study
4Gallium arsenides
2Electronic structure
2Epitaxial layers
2Indium compounds
2Indium phosphides
2LPE
2Quaternary compounds
1Absorption coefficients
1Arsenides phosphides
1Binary compounds
1Crystal growth
1Deformation potential
1Elastic deformation
1Elasticity
1Electron spin polarization
1Energy gap
1Epitaxy
1Gallium compounds
1Gallium phosphides
1III-V semiconductors
1Indium arsenides
1Inorganic compounds
1Interface states
1Photocathodes
1Photoelectron spectroscopy
1Piezo-optical effects
1Pseudomorphic growth
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor heterojunctions
1Semiconductor materials
1Semiconductor thin films
1Strained layer
1Stresses
1Ternary compounds
1Thin films
1Valence bands
1XRD

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