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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. S. Jaroshevich »
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A. S. Ivanov < A. S. Jaroshevich < A. S. Kaminskii  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
001009 (1997-08-01) Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films
001183 (1996-05-15) Highly strained InGaAsP films with high critical thicknesses
001229 (1996) Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films
001242 (1996) Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4-1.8 eV interval of band gaps
001282 (1995-10-23) InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy
001369 (1995) Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources
001370 (1995) Liquid phase epitaxial growth of elastically strained InxGa1-xP and InxGa1-xAsyP1-y solid solutions on GaAs substrates

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6Gallium arsenides
5Quaternary compounds
4Epitaxial layers
4Indium phosphides
4LPE
3Crystal growth
3Elastic deformation
3Gallium phosphides
3Semiconductor materials
2Binary compounds
2Electronic structure
2Indium arsenides
2Mismatch lattice
2Pseudomorphic growth
2Strained layer
2Stresses
2Ternary compounds
2Thin films
1Absorption coefficients
1Arsenides phosphides
1Criticality
1Crystal orientation
1Deformation potential
1Energy gap
1Epitaxy
1Film growth
1Gallium Arsenides phosphides
1Gallium compounds
1Heterojunctions
1III-V semiconductors
1Indium Arsenides phosphides
1Indium compounds
1Inorganic compounds
1Interface states
1Liquid phase
1Photoelectron spectroscopy
1Piezo-optical effects
1Semiconductor epitaxial layers
1Semiconductor growth
1Semiconductor heterojunctions
1Solid solutions
1Strains
1Thickness
1Valence bands
1XRD

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