A. R. Boyd < A. R. Kovsh < A. R. Novoselov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 101.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000189 (2008)		Quantum dot photonics : edge emitter, amplifier and VCSEL
000190 (2008)		Quantum dot diode lasers for optical communication systems
000223 (2007)		The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005)		QD lasers : Physics and applications
000349 (2005)		Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm
000367 (2005)		Long-wavelength lasers based on metamorphic quantum dots
000372 (2005)		High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000374 (2005)		High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000387 (2005)		Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000403 (2004-06)		Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000474 (2004)		High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000521 (2003-09)		Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000553 (2003-05)		Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000570 (2003-02-10)		Complete suppression of filamentation and superior beam quality in quantum-dot lasers
000611 (2003)		Recent advances in long wavelength GaAs-based quantum dot lasers
000613 (2003)		Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys

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List of associated KwdEn.i

Nombre de documents	Descripteur
81	Gallium arsenides
79	Experimental study
52	Indium compounds
45	Semiconductor quantum dots
44	III-V semiconductors
40	Photoluminescence
37	Indium arsenides
34	Molecular beam epitaxy
30	Semiconductor lasers
28	Quantum dots
18	Binary compounds
17	Current density
17	Ternary compounds
16	Quantum well lasers
14	Theoretical study
12	Threshold current
11	TEM
10	Aluminium compounds
10	Semiconductor materials
9	Interface states
9	Self organization
8	Ground states
8	Output power
8	Semiconductor growth
7	Aluminium arsenides
7	Island structure
7	Laser diodes
7	Surface emitting lasers
7	Temperature dependence
7	Vertical cavity laser
6	Crystal growth from vapors
6	Infrared laser
6	Quantum dot
6	Quantum dot lasers
6	Semiconductor quantum wells
5	Binary compound
5	Electroluminescence
5	Gallium nitrides
5	Indium nitrides
5	Injection laser
5	Semiconductor laser arrays
4	Localized states
4	Nanostructured materials
4	Optical properties
4	Quaternary compounds
4	Semiconductor epitaxial layers
4	Semiconductor heterojunctions
4	Transmission electron microscopy
4	self-assembly
3	Ambient temperature
3	CW lasers
3	Continuous wave
3	Continuous wave lasers
3	DLTS
3	Energy gap
3	Excited states
3	Excitons
3	Experiments
3	Gallium Arsenides
3	Heterostructures
3	IV characteristic
3	Indium Arsenides
3	Light emitting devices
3	Microcavity
3	Monolayers
3	Nitrogen compounds
3	Optimization
3	Performance evaluation
3	Phase separation
3	Quantum wells
3	Quantum yield
3	Self-assembled layers
3	Semiconducting indium compounds
3	Ternary compound
3	XRD
3	quantum dot lasers
2	Arsenic compounds
2	Buffer layer
2	CV characteristic
2	Chemical composition
2	Distributed Bragg reflection
2	Electron mobility
2	Electron-hole recombination
2	Electronic structure
2	Epitaxial layers
2	Filamentation
2	Gallium compounds
2	Growth mechanism
2	Heteroepitaxy
2	Heterojunctions
2	High temperature
2	III-V compound
2	Inorganic compounds
2	Interface structure
2	Light emitting diode
2	Luminous intensity current characteristic
2	MOCVD
2	Microelectronic fabrication
2	Microstructure
2	Nanostructures

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