Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. O. Kosogov »
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A. O. Govorov < A. O. Kosogov < A. O. Lebedev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000E73 (1998-05-15) High-power continuous-wave operation of a InGaAs/AlGaAs quantum dot laser
001032 (1997-06) Optical properties of vertically coupled InGaAs quantum dots in a GaAs matrix
001034 (1997-05-26) Properties of strained (In, Ga, Al)As lasers with laterally modulated active region
001051 (1997-02-24) Lateral and vertical ordering in multilayered self-organized InGaAs quantum dots studied by high resolution x-ray diffraction
001068 (1997) Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency
001085 (1997) Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques
001114 (1997) InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition
001115 (1997) High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots
001116 (1997) Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition
001139 (1996-11-11) Structural and optical properties of InAs-GaAs quantum dots subjected to high temperature annealing
001153 (1996-09-15) Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth
001158 (1996-09) Formation of vertically aligned arrays of strained InAs quantum dots in a GaAs(100) matrix
001210 (1996-02) An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
001690 (1992) Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers

List of associated KwdEn.i

Nombre de
documents
Descripteur
14Experimental study
11Gallium arsenides
6Indium arsenides
5Quantum dots
5Semiconductor lasers
5Ternary compounds
4Binary compounds
4III-V semiconductors
4Indium compounds
4Molecular beam epitaxy
3Crystal growth from vapors
3Multilayers
3Photoluminescence
3Semiconductor materials
3Semiconductor quantum dots
3TEM
3Threshold current
3XRD
2Aluminium compounds
2Characterization
2Electroluminescence
2Ground states
1Anisotropy
1CVD
1Convection
1Crystal growth
1Crystal microstructure
1Crystal morphology
1Crystal perfection
1Current density
1Epitaxy
1Excitons
1Gallium Indium Arsenides phosphides Mixed
1Gallium Indium Phosphides Mixed
1Growth from liquid
1Heterojunction
1Heterojunctions
1Heterostructures
1High resolution
1High-resolution methods
1Injection laser
1Inorganic compound
1Laser mirrors
1MOCVD
1Microdensitometry
1Operating mode
1Quantum efficiency
1Quantum well lasers
1Self-assembled layers
1Semiconductor growth
1Spatial correlation
1Support
1Surface emitting lasers
1Temperature dependence
1Temperature effects
1Thin film
1Transmission electron microscopy
1VPE
1X ray reflection
1X-ray reflection

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