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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. N. Titkov »
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A. N. Subbotin < A. N. Titkov < A. N. Tovpik  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000587 (2003-01-01) Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy
000771 (2002-02) Atomic Force Microscopy of InAs Quantum Dots on the Vicinal Surface of a GaAs Crystal
000805 (2002) Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy
000846 (2002) Control of density, size and size uniformity of MBE-grown InAs quantum dots by means of substrate misorientation
000D44 (1999) Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer
000E01 (1999) Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots
000E09 (1999) Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [010] direction
000E23 (1998-12) Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region
000E60 (1998-07) Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction
000F50 (1998) Formation of InSb quantum dots in a GaSb matrix
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
001467 (1994) Type II heterojunctions in the GaInAsSb/GaSb system
001522 (1993) Radiation recombination in type-II n-GaInAsSb/N-GaSb heterojunctions
001880 (1990) Staggered-lineup heterojunctions in the system of GaSb-InAs
001B56 (1988)

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Experimental study
8Semiconductor materials
7Photoluminescence
6Atomic force microscopy
6Gallium arsenides
6Indium arsenides
6Molecular beam epitaxy
5Binary compounds
5Quantum dots
4Gallium Antimonides
4III-V semiconductors
4Indium compounds
3Electroluminescence
3Heterojunction
2Band bending
2Band structure
2Binary compound
2Crystal growth from vapors
2Gallium Indium Antimonides arsenides Mixed
2Gallium antimonides
2Growth mechanism
2Heterojunctions
2Indium antimonides
2Inorganic compound
2Island structure
2Low temperature
2Photoconductivity
2Quantum dot
2Quantum well lasers
2Radiative recombination
2Self organization
2Semiconductor growth
2Semiconductor quantum dots
2Substrates
2Surface structure
2Temperature
2Vicinal surface
1Acceptor center
1Adatoms
1Aluminium compounds
1Arsenic compounds
1Band offset
1Capacitive coupling
1Charge carrier recombination
1Charge injection
1Chemical etching
1Contact potential
1Deep level
1Density
1Desorption
1Dimension spectrum
1Doping
1Electric potential
1Electron localization
1Electronic properties
1Electrostatic force
1Energy level
1Energy levels
1Energy-level transitions
1Epitaxial layers
1Film growth
1Force microscopy
1Gallium Indium Antimonides arsenides
1Germanium
1Heteroepitaxy
1Hole
1III-V compound
1IV characteristic
1Image processing
1Impurity density
1Indium Antimonides
1Infrared radiation
1Integrated circuit
1Laser mirrors
1Localized state
1Magnetic field
1Microelectronic fabrication
1Monolayers
1Monte Carlo method
1Nanometer scale
1Nanostructure
1Nanostructures
1Non contact measurement
1Optoelectronic devices
1Orientation
1Overlayers
1Potential well
1Process control
1Quantum well
1Quaternary compounds
1Reviews
1STM
1Scanning tunneling spectroscopy
1Semiconductor heterojunctions
1Semiconductor lasers
1Semiconductor quantum wells
1Step
1Stimulated emission
1Surface potential
1Surface topography

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