A. N. Gusatinskii < A. N. Imenkov < A. N. Kholodilov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 38.
[0-20] [0 - 20][0 - 38][20-37][20-40]

Ident.	Authors (with country if any)	Title
000561 (2003-04)		Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
000652 (2003)		InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000711 (2002-11)		Flattening of Dynamic Dielectric Phase Grating and Single-Mode Lasing under the Conditions of Transverse Oscillations of Luminous Flux
000745 (2002-05)		Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
000791 (2002)		Single mode laser based on InAsSb/InAsSbP double heterostructure with tuning from 3.224 to 3.234 μm
000862 (2001-12)		InAsSb/InAsSbP Double-Heterostructure Lasers Emitting in the 3-4 μm Spectral Range
000892 (2001-07)		Ultimate InAsSbP Solid Solutions for 2.6-2.8-μm LEDs
000905 (2001-04)		The spectral linewidth of tunable semiconductor InAsSb/InAsSbP lasers emitting at 3.2-3.6 μm (2800-3100 cm-1)
000918 (2001-03)		Current-Tunable Lasers with a Narrow Emission Line Operating at 3.3 μm
000A33 (2000-12)		Emission-Line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers
000A37 (2000-11)		InAsSb/InAsSbP Double-Heterostructure Lasers Emitting at 3-4 μm: Part I
000A43 (2000-09-20)		Tunable InAsSb/InAsSbP Laser with a Low Radiation Divergence in the p-n-Junction Plane
000B18 (2000-02)		Single-Mode InAsSb/InAsSbP Laser (λ ≃ 3.2 μm) Tunable over 100 Å
000C21 (1999-12)		Two-mode diode-laser spectroscopy with a InAsSb/InAsSbP laser near 3.6 μm
000C41 (1999-10)		InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency
000C51 (1999-09)		Short-wavelength current tuning of InAsSb/InAsSbP heterostructure lasers caused by an injection nonuniformity
000C63 (1999-08)		Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions
000D17 (1999-03)		Suppression of Auger recombination in diode lasers utilizing InAsSb/InAsSbP and InAs/GaInAsSb type-II heterojunctions
000D24 (1999-02)		Rapid tuning of the generation frequency of InAsSb/InAsSbP diode lasers (λ=3.3μm) due to nonlinear optical effects
000D29 (1999-02)		High-power light-emitting diodes operating in the 1.9 to 2.1-μm spectral range
000E92 (1998-03)		Spatial distribution of the radiation in the far zone of InAsSb/InAsSbP mesastrip lasers as a function of current

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List of associated KwdEn.i

Nombre de documents	Descripteur
32	Experimental study
26	Semiconductor lasers
22	Indium compounds
12	Laser tuning
11	Antimony compounds
11	Arsenic compounds
10	III-V semiconductors
9	Semiconductor heterojunctions
7	Indium antimonides
6	Indium arsenides
6	Theoretical study
5	Carrier density
5	Heterojunction
5	LPE
4	Electric currents
4	Electroluminescence
4	Gallium Indium Antimonides arsenides Mixed
4	Gallium arsenides
4	Indium phosphides
4	Phosphorus compounds
4	Semiconductor materials
4	Temperature
3	Current density
3	Gallium antimonides
3	Heterojunctions
3	Inorganic compound
3	Laser modes
3	Recombination
3	Temperature dependence
2	Aluminium compounds
2	Auger recombination
2	Diodes
2	Gallium Antimonides
2	Gallium compounds
2	Heterostructures
2	Instrumentation
2	Laser radiation
2	Low temperature
2	Nonlinear optics
2	Quantum yield
2	Quaternary compounds
2	Radiative recombination
2	Refractive index
2	Reviews
2	Semiconductor diodes
2	Semiconductor growth
2	Semiconductor laser
2	Solid solutions
2	Spectral shift
2	Ternary compounds
2	Threshold current
1	Absorption coefficients
1	Absorption spectra
1	Acceptor center
1	Ammonia
1	Application
1	Auger effect
1	Band structure
1	Carrier concentration
1	Carrier lifetime
1	Charge carrier
1	Charge carrier recombination
1	Charge carriers
1	Closed cycle helium cryostat
1	Cryostats
1	Double heterojunction
1	Electron-hole recombination
1	Emission spectra
1	Emission spectrum
1	Epitaxial layers
1	Experiments
1	Fabrication
1	Fabry Perot Cavity length
1	Gallium Indium Antimonides Arsenides Mixed
1	Gallium Indium Antimonides arsenides
1	Heating
1	Hole concentration
1	Indium Antimonides
1	Indium Arsenides
1	Indium Phosphides
1	Infrared laser
1	Infrared radiation
1	Infrared spectra
1	Infrared spectroscopy
1	Injection laser
1	Interface phenomena
1	Laser
1	Laser cavities
1	Laser diodes
1	Laser frequency stability
1	Laser theory
1	Laser width
1	Layers
1	Lifetime
1	Light emitting diode
1	Light emitting diodes
1	Line broadening
1	Line widths
1	Liquid phase epitaxy
1	Luminescence decay

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