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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. N. Baranov »
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A. N. Asanov < A. N. Baranov < A. N. Besyul Kin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 14.
Ident.Authors (with country if any)Title
000248 (2007) High-density InSb-based quantum dots emitting in the mid-infrared
000561 (2003-04) Current and Temperature Tuning of Quantum-Well Lasers Operating in 2.0- to 2.4-μm Range
001437 (1994-05-09) 2.7-3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
001526 (1993) Properties of epitaxial indium arsenide doped with rare-earth elements
001647 (1992) Nature of the long-wavelength shift of the spectrum of coherent radiation emitted from GalnAsSb heterolasers
001666 (1992) Investigation of structure defects in epitaxial indium arsenide films
001768 (1991) Optical reflection and determination of the characteristics of epitaxial InAs1-x-ySbxPy/InAs structures
001787 (1991) Investigation of the temperature dependence of the threshold current density of double-heterostructure GaInAsSb lasers
001880 (1990) Staggered-lineup heterojunctions in the system of GaSb-InAs
001884 (1990) Restrictions on the preparation of AIIIBV solid solutions
001896 (1990) Original spontaneous electroluminescence generated in GaInAsSb heterojunction light-emitting diodes in the spectral range 1.8-2.4 μm
001A35 (1989)
001A37 (1989)
001B55 (1988)

List of associated KwdEn.i

Nombre de
documents		Descripteur
10Experimental study
9Semiconductor materials
6Heterojunction
6Inorganic compound
5Gallium Indium Antimonides arsenides Mixed
5Temperature
4Low temperature
3Acceptor center
3Electroluminescence
3Gallium Antimonides
2Auger recombination
2Charge carrier concentration
2Charge carrier mobility
2Chemical composition
2Donor center
2Doping
2Epitaxial film
2Indium Arsenides
2Indium antimonides
2Magnetoconductivity
2Photoconductivity
2Photoluminescence
2Quantum yield
2Radiative recombination
2Semiconductor laser
2Solid solution
2Thickness
1Adatoms
1Aluminium compounds
1Ambient temperature
1Annealing
1Antimony
1Antimony Arsenic Gallium Indium Compounds
1Antimony compounds
1Band structure
1Carrier density
1Charge carrier
1Charge carrier recombination
1Charge carrier scattering
1Crystal defect
1Current density
1Defect level
1Diffusion
1Diodes
1Dislocation
1Electric currents
1Electrical conductivity
1Emission spectra
1Emission spectrum
1Experimental design
1Fourier transformation
1Gadolinium
1Gallium Indium Antimonides Arsenides Mixed
1Gallium Indium Antimonides arsenides
1Gallium antimonides
1Gallium arsenides
1Growth from liquid
1Growth mechanism
1Hall effect
1Heating
1Heterostructures
1High density
1III-V compound
1III-V semiconductors
1Impurity density
1Impurity diffusion
1Impurity level
1Indium Antimonides arsenides phosphides
1Indium arsenides
1Indium compounds
1Indium phosphides
1Infrared radiation
1Infrared reflection
1LPE
1Laser
1Laser diodes
1Lifetime
1Light emitting diode
1Luminescence decay
1Matrix method
1Mechanical stress relief
1Microwave radiation
1Molecular beam epitaxy
1Nanostructured materials
1Nanostructures
1Non radiative recombination
1Non stoichiometric composition
1Physical properties
1Potential well
1Quantum dots
1Quantum well
1Quantum well lasers
1Quaternary alloys
1Quaternary system
1Red shift
1Refraction index
1Refractive index
1Selenium
1Semiconductor lasers
1Spontaneous

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