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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. M. Kreshchuk »
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A. M. Kreschuk < A. M. Kreshchuk < A. M. Kulibekov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 16.
Ident.Authors (with country if any)Title
000E38 (1998-09) Weak-field magnetoresistance of two-dimensional electrons in In0.53Ga0.47As/InP heterostructures in the persistent photoconductivity regime
000F20 (1998) Spin-orbit splitting and weak antilocalization in an asymmetric In0.53Ga0.47As/InP quantum well
001041 (1997-04) Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum wells
001186 (1996-05) Quenching of persistent photoconductivity by electrical pulses
001193 (1996-05) Effect of a strong electric field on the properties of a nonequilibrium, two-dimensional electron gas in nonideal heterostructures
001226 (1996) Spin splitting of the Landau levels and exchange interaction of a non-ideal two-dimensional electron gas in InxGa1-xAs/InP heterostructures
001308 (1995-07) Determination of the properties of the 2D electron gas in InGaAs/InP structures by acoustic methods under the conditions of the quantum Hall effect
001358 (1995) Quantum transport effects in a two-dimensional electron gas as a tool for the investigation of heterointerfaces
001453 (1994-02) Quantum wires with controllable conducting-channel width based on In0.53Ga0.47As/InP heterostructures
001462 (1994-01) Shubnikov-de Hass oscillations in a nonuniform 2D electron gas
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001660 (1992) Low-temperature mobility of a two-dimensional electron gas and the quality of a heterojunction in InGaAs/InP heterostructures grown by liquid phase epitaxy
001986 (1989)
001B22 (1988)
001C36 (1987)
001E18 (1985)

List of associated KwdEn.i

Nombre de
documents		Descripteur
14Experimental study
11Electron gas
10Gallium arsenides
8Indium arsenides
8Indium phosphides
6Semiconductor materials
5Heterojunction
5Magnetoresistance
4Hall effect
4Indium Phosphides
4Inorganic compound
4Photoconductivity
4Two-dimensional systems
3Aluminium Gallium Arsenides Mixed
3Binary compounds
3Charge carrier concentration
3Epitaxy
3Gallium Arsenides
3Gallium Indium Arsenides Mixed
3Galvanomagnetic effect
3Heterostructures
3III-V semiconductors
3Semiconductor quantum wells
3Ternary compounds
3Two dimensional model
2Charge carrier mobility
2Charge carrier scattering
2Defect
2Doped materials
2Doping
2Electrical conductivity
2Gallium Indium Phosphides Mixed
2Growth from liquid
2Indium compounds
2Magnetoconductivity
2Quantum Hall effect
2Shubnikov de Haas effect
2Shubnikov-de Haas effect
2Theoretical study
2Two-dimensional electron gas
1Acoustic measurements
1Acoustic surface waves
1Concentration ratio
1Coulomb scattering
1Crystal growth
1Damping
1Electric conductivity
1Electron density
1Energy-level density
1Etching
1Exchange interactions
1Film resistor
1Films
1Fluctuations
1Hall conductivity
1Heteroepitaxy
1Impurity
1Impurity density
1Inorganic compounds
1Interface
1L-S coupling
1Landau level
1Landau levels
1Liquid phase epitaxy
1Localized states
1MHz range
1Magnetooscillatory properties
1Mobility
1Molecular beam condensation
1N type conductivity
1Negative magnetoconductivity
1Numerical solution
1P type conductivity
1Parallel connection
1Period
1Photography
1Preparation
1Quantum interference phenomena
1Quantum magnetic field
1Quantum transport
1Quantum wires
1Quenching
1Relaxation time
1Resistor
1Samarium
1Semiconductor heterojunctions
1Shunt
1Slip
1Solid solution
1Temperature dependence
1Temperature range 0-13 K
1Thin film

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