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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. Krier »
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A. Kovsh < A. Krier < A. Krost  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 11.
Ident.Authors (with country if any)Title
000152 (2009) InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications
000182 (2008) Type II InSb/InAs quantum dot structures grown by molecular beam epitaxy using Sb2 and As2 fluxes
000451 (2004) Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs
000644 (2003) Interface luminescence and lasing at a type II single broken-gap heterojunction
000752 (2002-04-22) Optical switching in midinfrared light-emitting diodes
000818 (2002) Interface-induced electroluminescence in the type II P-Ga0.84In0.16As0.22Sb0.78/ n-In0.83Ga0.17As0.82Sb0.18 single heterojunction
000A25 (2000-12-11) Superluminescence in InAsSb circular-ring-mode light-emitting diodes for CO gas detection
000A53 (2000-08-07) Room-temperature InAs0.89Sb0.11 photodetectors for CO detection at 4.6 μm
000C84 (1999-06-15) Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
000D90 (1999) High power 4.6 μm light emitting diodes for CO detection

List of associated KwdEn.i

Nombre de
documents		Descripteur
8Experimental study
5Electroluminescence
5LPE
5Photoluminescence
4III-V semiconductors
4Indium compounds
3Gas sensors
3Indium antimonides
3Light emitting diodes
3Quaternary compounds
2Binary compound
2Gallium antimonides
2Gas detector
2Indium Antimonides arsenides
2Indium Arsenides
2Light emitting diode
2Line intensity
2Molecular beam epitaxy
2Room temperature
1Acceptor donor pair
1Air pollution measurement
1Ambient temperature
1Antimony
1Antisite defects
1Arsenic Antimonides
1Auger recombination
1Buffer layer
1Carbon Oxides
1Carbon compounds
1Carbon dioxide
1Carbon monoxide
1Carrier density
1Chemical sensor
1Crystal growth
1Crystal purification
1Doping
1Energy-level transitions
1Environmental monitoring
1Epitaxial layers
1Epitaxy
1Excitons
1Fabrication
1Gadolinium
1Gallium Antimonides arsenides
1Gallium arsenides
1Gettering
1Getters
1Growth from liquid
1Heterojunctions
1High power
1III-V compound
1Impurity states
1Indium Antimonides
1Indium Antimonides arsenides phosphides
1Indium Phosphides
1Indium arsenides
1Infrared detectors
1Infrared radiation
1Interband transitions
1Interfaces
1Laser materials
1Line widths
1Liquid phase
1Luminescence spectrum
1Measuring instrument
1Microelectronic fabrication
1Mid infrared radiation
1Monolayer
1Nanostructure
1Optical materials
1Optical properties
1Optical sensors
1Optical switches
1Optoelectronic devices
1Output power
1Performance
1Purification
1Quantum dot
1Quantum dots
1Quantum efficiency
1Quantum wells
1Quaternary compound
1Radiation effects
1Radiation quenching
1Radiative recombination
1Radiative transition
1Semiconductor detectors
1Semiconductor epitaxial layers
1Semiconductor growth
1Solid solutions
1Superluminescent diodes
1TM mode
1Tellurium additions
1Temperature dependence
1Temperature effects
1Ternary compound
1Thermal characteristic
1Ultrathin films
1Voltage current curve
1p i n photodiodes

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