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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. I. Toropov »
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A. I. Tartakovskii < A. I. Toropov < A. I. Tursina  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 17.
Ident.Authors (with country if any)Title
000079 (2011) High-speed single-photon source based on self-organized quantum dots
000080 (2011) High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy
000097 (2010) Quantum dots for single and entangled photon emitters
000284 (2006) Strong sensitivity of photoluminescence of InAs/AlAs quantum dots to defects : evidence for lateral inter-dot transport
000458 (2004) Optical phonons in InAs and AlAs quantum dot structures
000470 (2004) Interface phonons in InAs and AlAs quantum dot structures
000555 (2003-04-10) Millisecond Photoluminescence Kinetics in a System of Direct-Bandgap InAs Quantum Dots in an AlAs Matrix
000681 (2003) Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma
000734 (2002-07) The Formation of InAs Quantum Dots in an Aluminum Oxide Matrix
000794 (2002) Quantum magnetotransport oscillations of 2DEG in a short-period InAs lateral superlattice on a vicinal (001) surface in a GaAs/AlGaAs heterostructure
000C35 (1999-10-15) Raman study of the topology of InAs/GaAs self-assembled quantum dots
000E52 (1998-07-15) Raman study of interface modes subjected to strain in InAs/GaAs self-assembled quantum dots
001615 (1992) Spectrum of shallow donor states in (GaAs)n(InAs)m superlattices
001702 (1992) Cyclotron resonance in (GaAs)n(InAs)m superlattices
001760 (1991) Photoluminescence of (InAs)n(GaAs)m superlattices under stress
001961 (1989) Molecular beam epitaxy of semiconductor films and modulated structures
001997 (1989)

List of associated KwdEn.i

Nombre de
documents		Descripteur
9Experimental study
9Semiconductor materials
7Indium Arsenides
7Quantum dots
6Gallium arsenides
6Indium arsenides
5Aluminium arsenides
5Binary compounds
5III-V semiconductors
5Inorganic compound
5Photoluminescence
5Raman spectra
4Gallium Arsenides
4Indium compounds
4Period
4Superlattice
3Excitons
3Interface phonons
3Semiconductor quantum dots
2Arsenic compounds
2Correlation functions
2Defect density
2Growth mechanism
2III-V compound
2Impurity
2Localized modes
2Optical transition
2Photoconductivity
2Single photon
2Single photon source
2Ternary compounds
1Aluminium Gallium Arsenides Mixed
1Aluminium compounds
1Anisotropy
1Annealing
1Aperture
1Avalanche diodes
1Backscattering
1Carrier mobility
1Charge carrier recombination
1Charge carrier trapping
1Crystal growth
1Cyclotron resonance
1Damping
1Defect formation
1Dielectric function
1Dislocation
1Donor center
1Doping
1Droplet epitaxy
1Electron phonon interaction
1Energy gap
1Energy transfer
1Entangled states
1Epitaxy
1Experimental design
1Gallium Indium Arsenides Mixed
1Germanium
1Growth defect
1Hall effect
1Heat treatments
1Heterointerface
1Heterojunctions
1High field
1High repetition rate
1High speed
1Implementation
1Infrared spectra
1Inorganic compounds
1Interdiffusion
1Interface structure
1Interfaces
1Landau level
1Lifetime
1Localized phonon
1Luminescence decay
1Magnetic field effects
1Magnetoresistance
1Matrix element
1Mismatch lattice
1Modulated structure
1Molecular beam condensation
1Molecular beam epitaxy
1Nanomaterial synthesis
1Nanostructured materials
1Nanostructures
1Non radiative recombination
1Optical microcavity
1Optical phonons
1Oxidation
1Oxygen compounds
1Periodic structures
1Phonon dispersion
1Phonon mode
1Phonon spectra
1Photon pair
1Piezo-optical effects
1Plasma assisted processing
1Quantum communication
1Quantum detector

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