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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. G. Milnes »
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A. G. Milekhin < A. G. Milnes < A. G. Mit Ko  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
001221 (1996) The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD
001260 (1996) Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001387 (1995) Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001400 (1994-12-01) Hydrogen passivation effects in InGaAlP and InGaP
001470 (1994) The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy
001476 (1994) Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation
001548 (1993) Mechanism of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6III-V compound
4Quaternary compound
3Aluminium phosphides
3Gallium phosphides
3Hydrogen
3Indium phosphides
3Quaternary compounds
3Voltage capacity curve
3Voltage current curve
2Aluminium Phosphides
2Barrier height
2CV characteristic
2Electrical properties
2Gallium Antimonides
2Gallium Phosphides
2Heterojunction
2Indium Phosphides
2Manufacturing process
2Microelectronic fabrication
2Passivation
2Photoluminescence
2Schottky barrier diode
2Semiconductor materials
2Ternary compound
2Thin films
1Aluminium Arsenides
1Aluminium Gallium Antimonides arsenides Mixed
1Annealing temperature
1Anodic oxide
1Band offset
1Binary compound
1CVD
1Carrier density
1Composition effect
1Conduction band
1Conductivity
1Contamination
1Cross section
1Crossed beams
1DLTS
1Diodes
1Doping
1Dose rate
1Electric resistivity
1Electrical characteristic
1Electronic properties
1Energy band
1Energy levels
1Epitaxy
1Fermi level
1Frequency characteristic
1Gadolinium additions
1Gallium Indium Antimonides arsenides Mixed
1Gallium antimonides
1Gallium arsenides
1Growth from solution
1Heterojunctions
1IV characteristic
1Implantation
1Impurity states
1Indium Antimonides
1Indium Arsenides
1Indium antimonides
1Indium arsenides
1Leakage current
1MESA diode
1MIS structure
1N-type conductors
1Optical properties
1Oxygen
1P-type conductors
1Phosphines
1Plasma
1Process improvement
1Proton
1Quantum wells
1Resistivity
1SIMS
1Schottky barrier
1Surface current
1Surface treatments
1Temperature dependence
1Temperature effect
1Ternary compounds
1Valence band
1p n junction

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