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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. G. Gladyshev »
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A. G. Geryagin < A. G. Gladyshev < A. G. Golenkov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 7.
Ident.Authors (with country if any)Title
000326 (2006) Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000401 (2004-06) High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000501 (2003-12) Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000521 (2003-09) Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000526 (2003-08) Quantum Dots in InAs Layers of Subcritical Thickness on GaAs(100)
000642 (2003) Investigation of the formation of InAs QD's in a AlGaAs matrix
000709 (2002-11) Room-Temperature Photoluminescence at 1.55 μm from Heterostructures with InAs/InGaAsN Quantum Dots on GaAs Substrates

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Gallium arsenides
6Experimental study
5Indium compounds
4Molecular beam epitaxy
4Photoluminescence
4Quantum dots
2Aluminium arsenides
2Indium arsenides
2Island structure
2Semiconductor heterojunctions
1Aluminium compounds
1Arsenic compounds
1Band offset
1Binary compounds
1Electron diffraction
1Electron mobility
1Energy gap
1Energy-level transitions
1Excited states
1Excitons
1Ground states
1Growth mechanism
1III-V semiconductors
1Localization
1Modulation
1Nanostructures
1Nitrogen compounds
1Optical properties
1Quantum dot lasers
1Self-assembled layers
1Self-assembly
1Semiconductor doping
1Semiconductor materials
1Semiconductor quantum dots
1Spectra
1Temperature
1Ternary compounds
1Transmission electron microscopy
1quantum dot lasers

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HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
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