A. E. Yunovich < A. E. Zhukov < A. Egorov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 142.
[0-20] [0 - 20][0 - 50][20-40]

Ident.	Authors (with country if any)	Title
000010 (2013)		The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
000190 (2008)		Quantum dot diode lasers for optical communication systems
000219 (2008)		A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000241 (2007)		MBE-grown metamorphic lasers for applications at telecom wavelengths
000281 (2006)		Superluminescent InAs/AlGaAs/GaAs quantum dot heterostructure diodes emitting in the 1100-1230-nm spectral range
000326 (2006)		Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000331 (2006)		1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000334 (2005)		Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000348 (2005)		QD lasers : Physics and applications
000355 (2005)		Optical spin polarization in double charged InAs self-assembled quantum dots
000356 (2005)		Optical spin polarization and exchange interaction in doubly charged InAs self-assembled quantum dots
000367 (2005)		Long-wavelength lasers based on metamorphic quantum dots
000401 (2004-06)		High-Power 1.5 μm InAs-InGaAs Quantum Dot Lasers on GaAs Substrates
000405 (2004-05)		Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures
000501 (2003-12)		Lasing at 1.5 μm in Quantum Dot Structures on GaAs Substrates
000514 (2003-10)		Temperature Characteristics of Low-Threshold High-Efficiency Quantum-Dot Lasers with the Emission Wavelength from 1.25 to 1.29 μm
000521 (2003-09)		Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates
000551 (2003-05)		Structural and Optical Properties of InAs Quantum Dots in AlGaAs Matrix
000570 (2003-02-10)		Complete suppression of filamentation and superior beam quality in quantum-dot lasers
000593 (2003)		Valence band structure of GaAsN compounds and band-edge lineup in GaAs/GaAsN/InGaAs heterostructures
000611 (2003)		Recent advances in long wavelength GaAs-based quantum dot lasers

---

List of associated KwdEn.i

Nombre de documents	Descripteur
115	Experimental study
113	Gallium arsenides
64	Indium compounds
60	Indium arsenides
60	Photoluminescence
55	III-V semiconductors
54	Semiconductor quantum dots
43	Quantum dots
41	Molecular beam epitaxy
35	Semiconductor lasers
29	Binary compounds
25	Ternary compounds
18	Current density
18	Quantum well lasers
16	Aluminium compounds
16	Semiconductor materials
16	Theoretical study
16	Threshold current
13	Aluminium arsenides
13	Excitons
12	Ground states
12	Semiconductor growth
11	Interface states
11	TEM
10	Electroluminescence
10	Laser diodes
10	Output power
9	Heterostructures
9	Infrared laser
9	Self organization
8	Quantum dot lasers
8	Semiconductor quantum wells
8	Temperature dependence
7	Injection laser
7	Island structure
7	Localized states
7	Optical properties
7	Quantum dot
6	Binary compound
6	Self-assembled layers
6	Strains
5	Arsenic compounds
5	Crystal growth from vapors
5	Excited states
5	Microcavity
5	Optical pumping
5	Quantum wells
5	Semiconductor epitaxial layers
5	Semiconductor heterojunctions
5	Semiconductor laser arrays
5	Vertical cavity laser
4	DLTS
4	Quaternary compounds
4	Spin polarization
4	Surface emitting lasers
4	Ternary compound
4	XRD
4	self-assembly
3	Ambient temperature
3	Band structure
3	CW lasers
3	Circular polarization
3	Continuous wave lasers
3	Electron hole pair
3	Energy gap
3	Energy-level transitions
3	Epitaxial layers
3	Epitaxy
3	Experiments
3	Gallium Arsenides
3	Heteroepitaxy
3	Heterojunctions
3	Indium Arsenides
3	Inorganic compounds
3	Light emitting devices
3	Light emitting diode
3	Monolayers
3	Nanostructured materials
3	Nanostructures
3	Optical gain
3	Optimization
3	Performance evaluation
3	Quantum yield
3	Schottky barriers
3	Self-assembly
3	Semiconducting indium compounds
3	Substrates
3	Thermal stability
3	Thickness
3	Transmission electron microscopy
3	quantum dot lasers
2	Buffer layer
2	Capacitance
2	Continuous wave
2	Crystal structure
2	Electron mobility
2	Electron-hole recombination
2	Electronic structure
2	Faraday effect
2	Filamentation

---

Pour manipuler ce document sous Unix (Dilib)

EXPLOR_STEP=IndiumV3/Data/Russie/Analysis

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i -k "A. E. Zhukov" 

HfdIndexSelect -h $EXPLOR_AREA/Data/Russie/Analysis/Author.i  \
                -Sk "A. E. Zhukov" \
         | HfdSelect -Kh $EXPLOR_AREA/Data/Russie/Analysis/biblio.hfd 

Pour mettre un lien sur cette page dans le réseau Wicri

{{Explor lien
   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
   |flux=    Russie
   |étape=   Analysis
   |type=    indexItem
   |index=    Author.i
   |clé=    A. E. Zhukov
}}

---

This area was generated with Dilib version V0.5.77. Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024