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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. E. Drakin »
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A. E. Dolbak < A. E. Drakin < A. E. Dubinov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 15.
Ident.Authors (with country if any)Title
000192 (2008) Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power
000342 (2005) Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers
000815 (2002) Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers
000827 (2002) High-power single-transverse-mode ridge optical waveguide semiconductor lasers
000A05 (2001) Dependence of the radiation pattern of a leaky-mode, quantum-well heterolaser on the pump current
000A42 (2000-10) Anomalous Dispersion, Differential Gain, and Dispersion of the α-Factor in InGaAs/AlGaAs/GaAs Strained Quantum-Well Semiconductor Lasers
000B57 (2000) Optical loss in strained quantum-well semiconductor ridge lasers
000B90 (2000) Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers
000C04 (2000) Brightness and filamentation of a beam from powerful cw quantum-well In0.2Ga0.8As/GaAs lasers
000E11 (1999) Angular distribution of the radiation from quantum-well 'leaky-wave' InGaAs/GaAs lasers
000F63 (1998) Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures
001497 (1994) A study of laser emission wavelength variations in 1.5 μm InGaAsP/InP BRS laser diodes: theoretical model and experiment
001B73 (1988)
001E36 (1984) Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth≃0.5 kA/cm2 AT 300 K)
001E88 (1984)

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Gallium arsenides
11Semiconductor lasers
10Experimental study
10Indium arsenides
9Ternary compounds
8Quantum well lasers
7Binary compounds
7Laser diodes
6Aluminium arsenides
4Beam profiles
3Far field
3Heterostructures
3Infrared laser
3Injection laser
3Intensity distribution
3Output power
3Refractive index
3Semiconductor laser
3Theoretical study
2Gallium Indium Arsenides phosphides Mixed
2Infrared radiation
2Laser beams
2Strained quantum well
2Transverse mode
11/f noise
1Aluminium Arsenides
1Aluminium compounds
1Amplified spontaneous emission
1Beam brightness
1Brightness
1Cavity resonators
1Digital simulation
1Divergences
1Double heterojunction
1Emission spectra
1Field distribution
1Filamentation
1Gain measurement
1Gallium Arsenides
1Gallium Indium Antimonides arsenides Mixed
1Gallium phosphides
1Heterojunction
1Heterojunctions
1III-V semiconductors
1IV characteristic
1Indium Arsenides
1Indium compounds
1Indium phosphides
1Laser mirrors
1Laser modes
1Laser noise
1Laser pumping
1Mirrors
1Near field
1Optical dispersion
1Optical gain
1Optical losses
1Optical scattering
1Optical waveguides
1Quantum wells
1Quaternary compounds
1Radiation damage
1Ridge waveguides
1Room temperature
1Single mode laser
1Single mode waveguide
1Spectral density
1Waveguide lasers
1Wavelengths

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