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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. De Visser »
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A. Danilewsky < A. De Visser < A. Denker  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 10.
Ident.Authors (with country if any)Title
000255 (2007) Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier
000556 (2003-04) Quantum Hall Effect-Insulator Transition in the InAs / GaAs System with Quantum Dots
000589 (2003-01) Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation
000660 (2003) Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layers
000802 (2002) Optical and transport properties of short-period InAs/GaAs superlattices near quantum dot formation
001167 (1996-08) Characteristic features of the magnetoresistance of Pb1-xSnxTe(In) and Pb1-xMnxTe(In) alloys in ultrastrong magnetic fields
001250 (1996) Electron mobility in selectively doped GaAs/InxGa1-xAs multiple quantum well structures
001283 (1995-10-15) Valence-band changes in Sb2-xInxTe3 and Sb2Te3-ySey by transport and Shubnikov-de Haas effect measurements
001662 (1992) Localization and delocalization of Pb1-xSnxTe:In induced by a very strong magnetic field and by infrared radiation
001692 (1992) Electron localization in Pb1-xSnxTe(In) in high magnetic field

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
6Gallium arsenides
5Hall effect
5Magnetoresistance
5Shubnikov-de Haas effect
4Indium arsenides
4Photoluminescence
4Semiconductor materials
3Binary compounds
3Carrier mobility
3Electron localization
3Quantum Hall effect
3Quantum wells
3Temperature dependence
2Atomic force microscopy
2Carrier density
2Doped materials
2Electrical conductivity
2Electron density
2High field
2Hopping conduction
2Impurity
2Indium
2Indium compounds
2Inorganic compound
2Magnetoconductivity
2Oscillations
2Quantum dots
2Semiconductor quantum dots
2Subband
2Thickness
2Tin Lead Tellurides Mixed
2Transport processes
1Activation energy
1Aluminium arsenides
1Antimony selenides
1Antimony tellurides
1Band structure
1Charge carrier concentration
1Chemical composition
1Doping
1Effective mass
1Electric conductivity
1Electron mobility
1Electron transfer
1Electronic structure
1Free carrier
1Illumination
1Impurity level
1Indium additions
1Indium tellurides
1Infrared radiation
1Interface structure
1Lead tellurides
1Magnetic field
1Magnetic field effects
1Magnetooscillatory properties
1Manganese tellurides
1Metal-insulator transition
1Metallic conduction
1Metastable state
1Metastable states
1Molecular beam epitaxy
1Mott transition
1Optical properties
1Photoconductivity
1Relaxation time
1Scattering
1Semiconductor alloys
1Semiconductor superlattices
1Silicon additions
1Solid solutions
1Superlattices
1Temperature
1Temperature range 0-13 K
1Temperature range 13-65 K
1Temperature range 273-400 K
1Temperature range 65-273 K
1Ternary compounds
1Theoretical study
1Thermoelectric properties
1Tin tellurides
1Tunneling
1Ultrathin films
1Valence bands
1Very low temperature
1Wave functions
1Weak localization

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