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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. A. Suvorova »
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A. A. Sustretov < A. A. Suvorova < A. A. Telegin  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000890 (2001-08) Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy
000A84 (2000-05) Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range
000C65 (1999-08) Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
000D12 (1999-03-15) Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs
000E35 (1998-10) Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
000E58 (1998-07) Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C
000F31 (1998) Optical properties of InAlAs quantum dots in an AlGaAs matrix
000F37 (1998) Lateral association of vertically-coupled quantum dots
000F50 (1998) Formation of InSb quantum dots in a GaSb matrix
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
000F97 (1997-10) Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
001024 (1997-07) Lateral association of vertically coupled quantum dots
001062 (1997-01) Modulation of a quantum well potential by a quantum-dot array

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Experimental study
9Gallium arsenides
9Photoluminescence
7Indium compounds
7Semiconductor quantum dots
6III-V semiconductors
6Molecular beam epitaxy
6TEM
4Island structure
2Annealing
2Atomic force microscopy
2Binary compound
2III-V compound
2Integrated circuit
2Microelectronic fabrication
2Quantum dot
2Quantum dots
2Semiconductor epitaxial layers
2Semiconductor-metal boundaries
2Transmission electron microscopy
1Aluminium arsenides
1Antimony
1Binary compounds
1Chemical etching
1Chemical interdiffusion
1Crystal growth from vapors
1Crystal structure
1Deposition process
1Doping profiles
1Electron-hole recombination
1Energy gap
1Energy-level transitions
1Epitaxial layers
1Gallium Antimonides
1Gallium Arsenides
1Gallium antimonides
1Gold
1Growth mechanism
1Heteroepitaxy
1Indium
1Indium Antimonides
1Indium Arsenides
1Indium antimonides
1Indium arsenides
1Interface structure
1Lattice parameters
1Light emitting devices
1Localized states
1Measuring methods
1Monolayers
1Multilayers
1Nanometer scale
1Nanostructure
1Nanostructured materials
1Narrow band gap semiconductors
1Optical properties
1Point defects
1Potential barrier
1Precipitation
1Quantity ratio
1Quantum well lasers
1RHEED
1Reflection high energy electron diffraction
1Schottky barriers
1Self organization
1Semiconductor doping
1Semiconductor growth
1Semiconductor heterojunctions
1Semiconductor materials
1Semiconductor quantum wells
1Spectral shift
1Strain control
1Surface topography
1Synchrotron radiation
1Ternary compound
1Ternary compounds
1Theoretical study
1XRD
1self-assembly

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