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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. A. Sitnikova »
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A. A. Shlensky < A. A. Sitnikova < A. A. Smol Kov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 9.
Ident.Authors (with country if any)Title
000233 (2007) Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates
000362 (2005) Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers
000397 (2004-06-07) Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy
000520 (2003-09) Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates
000704 (2002-12) MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells
000810 (2002) Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates
000A28 (2000-12) Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface
000C50 (1999-09) Spontaneously assembling periodic composition-modulated InGaAsP structures
000C93 (1999-05) Spontaneously forming periodic composition-modulated InGaAsP structures

List of associated KwdEn.i

Nombre de
documents		Descripteur
7Experimental study
7Photoluminescence
6Indium compounds
5III-V semiconductors
5Molecular beam epitaxy
4Gallium arsenides
4Transmission electron microscopy
3Semiconductor epitaxial layers
3XRD
2Aluminium compounds
2Antimony compounds
2Crystal growth from vapors
2Gallium compounds
2Indium arsenides
2Lattice parameters
2Optical properties
2Semiconductor quantum wells
2Theoretical study
2VPE
1Absorption coefficients
1Aluminium oxides
1Arsenic compounds
1Band structure
1Binary compounds
1Cadmium compounds
1Cadmium selenides
1Chemical composition
1Crystal structure
1Electroluminescence
1Electron density
1Electron microprobe analysis
1Electron mobility
1Energy gap
1Epitaxial layers
1Gallium nitrides
1Growth mechanism
1Heterostructures
1II-VI semiconductors
1III-V compound
1Indium antimonides
1Indium nitrides
1Interfaces
1LPE
1Luminescence
1MOVPE method
1Magnesium compounds
1Magnesium selenides
1Morphology
1Nanostructured materials
1Nitrides
1Operating conditions
1Passivation
1Phase separation
1Phosphorus compounds
1Plasma assisted processing
1Quantity ratio
1Quantum dots
1Quantum wells
1RHEED
1Semiconductor growth
1Semiconductor heterojunctions
1Semiconductor materials
1Shubnikov-de Haas effect
1Solid solutions
1Spatial distribution
1Spectral line shift
1Spinodal decomposition
1Stacking fault density
1Stacking sequence
1Stoichiometry
1Strains
1Surface structure
1TEM
1Template reaction
1Two-dimensional electron gas
1Zinc tellurides
1interface roughness
1self-assembly

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