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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. A. Padalitsa »
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A. A. Orlikovsky < A. A. Padalitsa < A. A. Perov  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.
Ident.Authors (with country if any)Title
000156 (2009) High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000157 (2009) High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000203 (2008) Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
000213 (2008) Double integrated nanostructures for pulsed 0.9-μm laser diodes
000382 (2005) Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral range
000688 (2003) Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000721 (2002-09) MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
000815 (2002) Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers
000817 (2002) Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD
000820 (2002) Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
000982 (2001) Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD
000D61 (1999) Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction

List of associated KwdEn.i

Nombre de
documents		Descripteur
11Semiconductor lasers
9Experimental study
8Gallium arsenides
8Heterostructures
8Laser diodes
8Ternary compounds
7Aluminium arsenides
7Indium arsenides
6MOCVD
5Output power
5Quantum well lasers
5Quantum wells
4Binary compounds
4Gallium Arsenides
4III-V semiconductors
4Indium Arsenides
3Aluminium Arsenides
3CVD
3Crystal growth from vapors
3Emission spectra
3Infrared laser
3Single mode laser
3Thin films
3VPE
2AES
2Chemical composition
2Depth profiles
2Doping profiles
2High-power lasers
2IV characteristic
2Luminous intensity current characteristic
2MOVPE method
2Multilayers
2Optical losses
2Strained quantum well
2Surface segregation
2p n junctions
11/f noise
1Active region
1Aluminium Gallium Arsenides
1Aluminium compounds
1Barrier layer
1Beam profiles
1Carbon
1Carbon additions
1Carbon tetrachloride
1Carrier density
1Characterization
1Crystal doping
1Divergences
1Energy levels
1Fabrication property relation
1Far field
1Heterojunctions
1Indium Gallium Arsenides
1Indium compounds
1Injection current
1Inorganic compounds
1Laser noise
1Low pressure
1Luminescence
1Mechanical stress
1Microelectronic fabrication
1Misfit dislocations
1Nanostructures
1Operating mode
1Optical properties
1Precursor
1Pseudomorphic growth
1Semiconductor heterojunctions
1Spectral density
1Temperature dependence
1Temperature effects
1Zinc additions
1ns range

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