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Serveur d'exploration sur l'Indium - Analysis (Russie)

Index « Auteurs » - entrée « A. A. Marmalyuk »
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A. A. Markov < A. A. Marmalyuk < A. A. Musaev  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000108 (2010) Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures
000136 (2009) Stimulated-emission wavelength switching in optically pumped InGaAs/AIGaInAs laser heterostructures
000156 (2009) High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000157 (2009) High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000203 (2008) Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
000213 (2008) Double integrated nanostructures for pulsed 0.9-μm laser diodes
000382 (2005) Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral range
000688 (2003) Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000721 (2002-09) MOCVD-Grown InGaAs/GaAs/AlGaAs Laser Structures with a Broad-Area Contact
000783 (2002) The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution
000815 (2002) Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers
000817 (2002) Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD
000820 (2002) Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
000827 (2002) High-power single-transverse-mode ridge optical waveguide semiconductor lasers
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
000982 (2001) Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD
000D61 (1999) Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction
000F56 (1998) Evaluation of elastic constants of AlN, GaN, and InN

List of associated KwdEn.i

Nombre de
documents		Descripteur
13Semiconductor lasers
11Gallium arsenides
11Ternary compounds
10Experimental study
10Heterostructures
10Indium arsenides
9Aluminium arsenides
8Laser diodes
8MOCVD
7Quantum wells
6Binary compounds
6Output power
5Gallium Arsenides
5III-V semiconductors
5Indium Arsenides
5Quantum well lasers
4Aluminium Arsenides
4Emission spectra
3CVD
3Crystal growth from vapors
3Infrared laser
3Single mode laser
3Surface segregation
3Theoretical study
3Thin films
3VPE
2AES
2Chemical composition
2Depth profiles
2Doping profiles
2Far field
2Growth mechanism
2High-power lasers
2IV characteristic
2Luminous intensity current characteristic
2MOVPE method
2Mechanical stress
2Multilayers
2Nanostructures
2Optical losses
2Strained quantum well
2p n junctions
11/f noise
1Active region
1Aluminium Gallium Arsenides
1Aluminium compounds
1Aluminium nitrides
1Barrier layer
1Beam profiles
1Boundary layers
1Brightness
1Carbon
1Carbon additions
1Carbon tetrachloride
1Carrier density
1Characterization
1Computerized simulation
1Crystal doping
1Digital simulation
1Divergences
1Elastic constants
1Elastic deformation
1Elasticity
1Energy levels
1Epitaxy
1Fabrication property relation
1Free energy
1Gallium nitrides
1Heterojunctions
1III-V compound
1Indium Gallium Arsenides
1Indium compounds
1Indium nitrides
1Injection current
1Inorganic compounds
1Intensity distribution
1Laser noise
1Low pressure
1Luminescence
1Mechanical properties
1Microelectronic fabrication
1Misfit dislocations
1Modelling
1Nanostructured materials
1Near field
1Operating mode
1Optical properties
1Optical pumping
1Organometallic compounds
1Precursor
1Pseudomorphic growth
1Refractive index
1Semiconductor heterojunctions
1Semiconductor materials
1Single mode waveguide
1Spectral density
1Stimulated emission
1Strain energy
1Stress distribution
1Surface stresses

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