IndiumV3, Russie, Analysis, indexItem, Author.i, A. A. Klochikhin

A. A. Kiselev < A. A. Klochikhin < A. A. Kochetkov

Facettes :

List of bibliographic references

Number of relevant bibliographic references: 13.

Ident.	Authors (with country if any)	Title
000273 (2007)		Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation
000295 (2006)		Resonant Raman scattering in InGaN alloys
000307 (2006)		Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
000366 (2005)		Manifestation of the equilibrium hole distribution in photoluminescence of n-InN
000391 (2005)		Acceptor states in the photoluminescence spectra of n-InN
000393 (2005)		A gauge invariant approach to the raman scattering in heavily doped crystals
000619 (2003)		Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys
000690 (2003)		Band gap of hexagonal InN and InGaN alloys
000848 (2002)		Comment on: Band gap of InN and In-rich InxGa1-xN alloys (0.36 < x < 1). Authors' reply
000849 (2002)		Band gap of hexagonal InN and InGaN alloys
000850 (2002)		Band gap of InN and in-rich InxGa1-xN alloys (0.36 < x < 1)
000853 (2002)		Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap
000947 (2001)		Radiation-induced defects in n-type GaN and InN

List of associated KwdEn.i

Nombre de documents	Descripteur
13	Indium nitrides
11	Photoluminescence
8	Gallium nitrides
6	Binary compounds
6	Energy gap
5	Carrier density
5	Hexagonal lattices
5	Monocrystals
5	Semiconductor materials
5	Ternary compounds
4	Doping
4	Experimental study
3	Absorption spectra
3	Annealing
3	Composition effect
3	III-V semiconductors
3	Inorganic compounds
3	Raman spectra
2	Absorption edge
2	Charge carrier trapping
2	Chemical composition
2	Effective mass
2	Epitaxial layers
2	Excitation spectrum
2	Interband transitions
2	Molecular beam epitaxy
2	Narrow band gap semiconductors
2	Scanning electron microscopy
1	Absorption coefficients
1	Acceptor center
1	Accumulation layers
1	Ambient temperature
1	Band bending
1	Bowing parameter
1	Burstein Moss effect
1	CV characteristic
1	Carrier mobility
1	Charge carrier recombination
1	Charge compensation
1	Charge density
1	Charge fluctuation
1	Coulomb interaction
1	Crystal structure
1	Defect density
1	Deformation potential
1	Degenerate semiconductor
1	Degenerate state
1	Electron charge
1	Electron charge distribution
1	Electronic structure
1	Energy relaxation
1	Equation resolution
1	Free carrier
1	Free electron
1	Froehlich interactions
1	Growth mechanism
1	Hall effect
1	Heavily doped semiconductors
1	III-V compound
1	Impurities
1	Irradiation defect
1	Layer thickness
1	Localized states
1	MOCVD
1	MOMBE method
1	Nanorod
1	Nanostructured materials
1	Near infrared radiation
1	Non linear effect
1	Nonstoichiometry
1	Optical absorption
1	Optical constants
1	Optical measurement
1	Optical spectrum
1	Optical transition
1	Photoreflectance
1	Physical radiation effects
1	Plasma assisted processing
1	Proton beams
1	Quantity ratio
1	Quantum yield
1	Raman scattering
1	Raman spectroscopy
1	Reflectance
1	Resonance Raman scattering
1	Scattering
1	Shallow level
1	Silicon
1	Structural analysis
1	Sum rules
1	Surface effect
1	Temperature effects
1	Thin films
1	Thomas-Fermi model
1	Urbach rule
1	Valence bands
1	Vibrational modes

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List of bibliographic references

List of associated KwdEn.i

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Index « Auteurs » - entrée « A. A. Klochikhin »