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Serveur d'exploration sur l'Indium - Analysis (Russie)

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List of bibliographic references

Number of relevant bibliographic references: 18.
Ident.Authors (with country if any)Title
000010 (2013) The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
000024 (2013) Correlation and dephasing effects on the non-radiative coherence between bright excitons in an InAs QD ensemble measured with 2D spectroscopy
000078 (2011) Hot electron transport in heterostructures
000189 (2008) Quantum dot photonics : edge emitter, amplifier and VCSEL
000190 (2008) Quantum dot diode lasers for optical communication systems
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000223 (2007) The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000241 (2007) MBE-grown metamorphic lasers for applications at telecom wavelengths
000276 (2006) Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
000309 (2006) Mode locking of electron spin coherences in singly charged quantum dots
000326 (2006) Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000348 (2005) QD lasers : Physics and applications
000367 (2005) Long-wavelength lasers based on metamorphic quantum dots
000372 (2005) High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000373 (2005) High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000374 (2005) High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
000867 (2001-10-15) Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature

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