Le cluster Carbone - Réacteur nucléaire
| 000007 (2013) | Thermodynamic properties of uranium in Ga-In based alloys | |
| 000994 (2001) | Field of secondary radiation from the surface of heavy targets irradiated with medium-energy protons (Ep ∼ 1 GeV) | |
| 001486 (1994) | Field electron current noise of metal-film emitters | |
| 000004 (2013) | Thermodynamics of reaction of praseodymium with gallium-indium eutectic alloy | |
| 000008 (2013) | Thermodynamic properties of lanthanum in gallium-indium eutectic based alloys | |
| 000158 (2009) | HIGH-ENERGY NEUTRON-RADIATION REFERENCE FIELD | |
| 000376 (2005) | Experimental studies of a thermionic diode with a solid insulating interelectrode medium | |
| 000109 (2010) | LiInSe2 nanosecond optical parametric oscillator tunable from 4.7 to 8.7 μm | |
| 000138 (2009) | Spectroscopic and first-principles studies of boron-doped diamond: Raman polarizability and local vibrational bands | |
| 000156 (2009) | High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures | |
| 000174 (2009) | Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters | |
| 000175 (2009) | Broadly tunable LiInSe2 optical parametric oscillator pumped by a Nd:YAG laser | |
| 000276 (2006) | Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots | |
| 000306 (2006) | Nonlinear optical properties of copper nanoparticles synthesized in indium tin oxide matrix by ion implantation | |
| 000335 (2005) | Thermodynamic calculation and experimental investigation of the surface enrichment of electrochemically activated Al-Me (Sn, In, Zn) alloys | |
| 000606 (2003) | Some regularities in eutectoid transformations in binary systems of plutonium | |
| 000792 (2002) | Redox conversions of poly(3,4-ethylenedioxythiophene) and its copolymer with bithiophene in aprotic media of different donor capability | |
| 000832 (2002) | Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures | |
| 000881 (2001-09) | Electronic Properties of InAs-Based Metal-Insulator-Semiconductor (MIS) Structures | |
| 000C32 (1999-11) | Heats of mixing of gold with copper and indium | |
| 000D64 (1999) | Physicochemical aspects of adhesion of thin MSb (M = In, Ga, Cd) layers | |
| 000F66 (1998) | Comparative characteristics of absorber cluster assemblies of VVÉR-1000 and PWR reactors | |
| 001173 (1996-07) | Influence of quasilocal states of In on defect formation in PbTe | |
| 001256 (1996) | Effect of ZrOCl2 on the thermal oxidation of InP | |
| 001590 (1993) | An approach to the prediction of new compounds with the structural type of indium antimonite | |
| 001783 (1991) | Localization of carbon, nitrogen, and oxygen atoms implanted in the lattices of III-V binary semiconductor crystals | |
| 001838 (1991) | Cooling of electrons and noise in heating electric fields | |
| 001899 (1990) | Noise temperature in compensated n-type InSb:Cr | |
| 001902 (1990) | Mechanism of the influence of isovalent in impurities on the properties and ensemble of defects in GaAs grown by the molecular beam epitaxy method | |
| 001D72 (1985) | The nature of negative linear expansion in layer crystals C, BN, GaS, GaSe and InSe |
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