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Serveur d'exploration sur l'Indium

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Le cluster Aluminium - Magnésium

Terms

35Aluminium
6Magnésium
4Métal
2Vanadium
3Titane
7Nanotechnologie
2Métal lourd
4Azote

Associations

Freq.WeightAssociation
33Aluminium - Magnésium
11Magnésium - Métal
11Métal - Titane
11Titane - Vanadium
11Nanotechnologie - Titane
11Aluminium - Métal
11Aluminium - Métal lourd
11Aluminium - Azote
Documents par ordre de pertinence
000C86 (1999-06) Properties of positron annihilation in metals
000176 (2009) Attainability of negative differential conductance in tunnel Schottky structures with 2D channels: theory and experiment
001251 (1996) Electroluminescence determination of heavy metal ions in an acid medium
001480 (1994) Neutron-activation analysis of high-purity materials using extraction chromatography
001797 (1991) Influence of the electron charge profile near the surface of aluminium, magnesium, and indium on the characteristic electron energy loss spectrum
001883 (1990) Simultaneous fluorimetric determination of aluminum, gallium, indium, and magnesium with 8-hydroxyquinoline in special-purity potassium chloride
001912 (1990) Investigation of isovalent impurity states in GaP using the extended-Hückel and the Mulliken-Wolfsberg-Helmholtz method
001D50 (1986)
000021 (2013) Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer
000101 (2010) Peculiarities of Al magic cluster self-assembly on Si( 10 0) surface
000265 (2007) Chemisorption interaction of liquid electrodes of gallium and In-Ga, Cd-Ga and Tl-Ga alloys with solvents in a wide range of their donor numbers
000376 (2005) Experimental studies of a thermionic diode with a solid insulating interelectrode medium
000379 (2005) Effects of separate carrier generation on the emission properties of InAs/ GaAs quantum dots
000390 (2005) Activation of aluminum metal and its reaction with water
000404 (2004-05) MOCVD Growth and Mg-Doping of InAs Layers
000427 (2004-02) Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots
000535 (2003-07-01) Single-Turn GaAs/InAs Nanotubes Fabricated Using the Supercritical CO2 Drying Technique
000538 (2003-07) On the Superconducting Transition Temperature for Metallic Nanocrystals
000565 (2003-03) Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: 1. Photoluminescence
000586 (2003-01-15) Free-Standing InAs/InGaAs Microtubes and Microspirals on InAs (100)
000606 (2003) Some regularities in eutectoid transformations in binary systems of plutonium
000834 (2002) Electroluminescence of mercury-like ions on aluminum electrode
000835 (2002) Electroluminescence characteristics of card anthracene-containing polyimide: The effect of the cathode and anode materials
000A41 (2000-10) New Class of Holographic Materials Based on CdF2 Semiconductor Crystals with Bistable Centers. I. Role of Covalence in the Formation of Bistable Centers
000A48 (2000-09-20) A Spread in Electrophysical Parameters of Ferroelectric Piezoelectric Solid Solutions and Its Minimization
000A81 (2000-05-15) Donor impurities and DX centers in the ionic semiconductor CdF2: Influence of covalency
000A88 (2000-05) New approach to the independent ohmic contact formation in the structures with two parallel isotype quantum wells
000A98 (2000-04) Nonlinear Waves in Group III Metals
000B66 (2000) Low-voltage cathodic luminescence of Tin and indium ions on aluminum electrodes
000C56 (1999-09) Heteroepitaxial growth of InAs on Si: a new type of quantum dot
000C75 (1999-07) Production of highly dispersed metal powders by electrical explosion in reduced-pressure nitrogen
000C96 (1999-05) Inhomogeneous strains in semiconducting nanostructures
001049 (1997-03) Protection of organic thin-film light-emitting diodes
001542 (1993) Nernst-Ettingshausen coefficient of high-purity aluminum and indium and the Peierls exponential function
001613 (1992) Static and dynamic characteristics of the bulk and contact electrical resistance of CdCr2Se4 under conditions of stochastic instability of the current
001626 (1992) Redistribution of magnesium in InAs during postimplantation annealing
001739 (1991) Super-high-strength hermetically metal-coated optical fibres
001783 (1991) Localization of carbon, nitrogen, and oxygen atoms implanted in the lattices of III-V binary semiconductor crystals
001784 (1991) Line profile of a bound exciton in a piezoelectric semiconductor solid solution
001833 (1991) Doping effects on mechanical properties and microhardness of superionic copper selenide Cu2-xSe
001932 (1990) Degradation mechanisms of the contact between metallic films and alkali halide crystals
001943 (1990) Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers
001969 (1989) Influence of aluminium and indium addition on the properties of superconducting Bi2Sr2CaCu2Oy metal oxide
001A66 (1988) Intrinsic and deep centre charge carriers in indium antimonide
001A76 (1988)
001A79 (1988)
001B21 (1988)
001C05 (1987)
001C57 (1987)
001D46 (1986)
001D97 (1985)
001E10 (1985)
001E44 (1984)
001E48 (1984)
Wicri

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