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Serveur d'exploration sur l'Indium

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Le cluster Composé minéral - Dopage

Terms

672Composé minéral
134Dopage
44Irradiation
29Fer
18Chrome
23Manganèse
30Zinc
31Antimoine

Associations

Freq.WeightAssociation
5050Composé minéral - Dopage
2929Composé minéral - Irradiation
1818Composé minéral - Fer
1616Chrome - Composé minéral
1414Composé minéral - Manganèse
1212Composé minéral - Zinc
1111Antimoine - Composé minéral
88Dopage - Fer
66Dopage - Zinc
66Dopage - Manganèse
55Chrome - Manganèse
55Chrome - Fer
55Chrome - Dopage
44Fer - Manganèse
33Dopage - Irradiation
33Antimoine - Dopage
11Irradiation - Zinc
11Irradiation - Manganèse
11Fer - Zinc
11Fer - Irradiation
11Chrome - Zinc
11Chrome - Irradiation
11Antimoine - Zinc
Documents par ordre de pertinence
001998 (1989)
001C16 (1987)
001D52 (1986)
001E13 (1985)
001E79 (1984)
001597 (1992) Transmutation doping and Fermi-level stabilization in neutron-irradiated InP
001740 (1991) Structure of the wave functions of impurity centers of transition elements in III-V compounds
001768 (1991) Optical reflection and determination of the characteristics of epitaxial InAs1-x-ySbxPy/InAs structures
001786 (1991) Large clusters of electrically active defects in indium phosphide single crystals
001902 (1990) Mechanism of the influence of isovalent in impurities on the properties and ensemble of defects in GaAs grown by the molecular beam epitaxy method
001970 (1989) Hydrogen passivation of donors and acceptors in InP
001A66 (1988) Intrinsic and deep centre charge carriers in indium antimonide
001B17 (1988)
001B75 (1988)
001C06 (1987)
001C49 (1987)
001C56 (1987)
001D78 (1985)
001D98 (1985)
001E02 (1985)
001E25 (1985)
001E43 (1984)
001E83 (1984)
000029 (2012) Synthesis and luminescence properties of lithium, zinc and scandium 1-(2-pyridyl)naphtholates
000135 (2009) Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000151 (2009) InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix
000155 (2009) High-temperature transport and stability of SrFe1-xNbXO3-δ
000205 (2008) Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3
000226 (2007) Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix
000229 (2007) Redox behavior and transport properties of La0.5- 2xCexSr0.5+xFeO3- δ and La0.5+2yFe1- yNbyO3- δ perovskites
000249 (2007) High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure
000307 (2006) Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
000390 (2005) Activation of aluminum metal and its reaction with water
000974 (2001) Magnetoresistance and shubnikov-de Haas effect in magnetic ion-doped Bi2Se3
001231 (1996) Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel
001234 (1996) Reactive indicator tools for rapid water tests
001511 (1993) Temperature dependence of the photoluminescence of modified InP:Sn crystals
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001526 (1993) Properties of epitaxial indium arsenide doped with rare-earth elements
001527 (1993) Profiles of isotopes in III-V semiconductor compounds formed as a result of bombardment with high-energy α particles
001570 (1993) Extrinsic recombination processes in proton irradiated InAs/GaAs heterostructures grown by molecular beam epitaxy
001619 (1992) Solid-phase laser doping of CdxHg1-xTe single crystals
001657 (1992) Luminescence of chromium ions in single crystals of semiconducting spinel CdIn2S4:Cr
001661 (1992) Long-range effects in semiinsulating semiconductors GaAs and InP irradiated with argon ions
001716 (1992) A new optical damage resistant impurity in lithium niobate crystals: indium
001725 (1991) Transport phenomena in Bi2-xInxTe2.85Se0.15 solid solutions
001728 (1991) Thermal conductivity of PbTe doped simultaneously with In and I
001741 (1991) Spectra of the surface photo-emf developed by p-type InP (100) crystals with submonatomic copper films
001748 (1991) Raman scattering in epitaxial GaAs filmd doped with isovalent Bi and In impurities : influence of defects and plasmophonon damping
001750 (1991) Raman light scattering investigation of structural disorder of InP single crystals implanted with Be+ions
001770 (1991) On the nature of radiation defects responsible for fermi level pinning effect in InP
001801 (1991) Influence of isovalent doping with indium on the properties of epitaxial gallium arsenide films grown from the vapor phase
001802 (1991) Influence of isovalent doping with In and Sb on the photoluminescence of complexes formed in epitaxial heavily doped p-type GaAs:Ge
001820 (1991) Exciton states in doped InSe and GaSe single crystals
001825 (1991) Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions
001826 (1991) Electrical and photoelectric properties of InAsSbP solid solutions
001829 (1991) Effect of doping on exciton states in InSe and GaSe lamellar semiconductors
001833 (1991) Doping effects on mechanical properties and microhardness of superionic copper selenide Cu2-xSe
001835 (1991) Determination of the oscillator strength of F centres in KBr-In by photostimulated luminescence
001838 (1991) Cooling of electrons and noise in heating electric fields
001839 (1991) Characterization of W defects in electron-irradiated InP
001840 (1991) Characteristics of the photoluminescence of manganese-doped In0.53Ga0.57As solid solutions under conditions resulting in changes in the state of the InP-InGaAs interface
001841 (1991) Characteristics of liquid phase epitaxy and of electrophysical properties of epitaxial In0.53Ga0.47As:Sb films
001847 (1991) Behavior of ytterbium in epitaxial p-type GalnSbAs films
001863 (1990) Transmutation doping of indium phosphide and gallium arsenide due to protons and α-particles
001869 (1990) The influence of unixial stress on the hopping conductivity in p-InSb. The anisotropy of the hopping conductivity
001892 (1990) Photoluminescence of epitaxial GaAs:In films prepared by the chloride method
001899 (1990) Noise temperature in compensated n-type InSb:Cr
001906 (1990) Ligand ENDOR of Cr3+ and Yb3+ ions in Cs2NaInCl6
001909 (1990) Investigation of the kinetics of the photoconductivity of short InP:Fe photoresistors
001912 (1990) Investigation of isovalent impurity states in GaP using the extended-Hückel and the Mulliken-Wolfsberg-Helmholtz method
001915 (1990) Influence of fast-electron irradiation on the edge photoluminescence of epitaxial n-type InP films
001919 (1990) Growth, structure and properties of thin monocrystalline InSb films grown by recrystallization in a narrow gap
001937 (1990) Charge states of tin impurity atoms and their influence on the electical conductivity of In2S3
001950 (1989) The influence of gadolinium doping on the switching effect in indium selenide single crystals
001951 (1989) The effect of electron radiation on thermal and electrophysical properties of n-InP
001956 (1989) Picosecond photoconductivity in InP:Fe:O
001961 (1989) Molecular beam epitaxy of semiconductor films and modulated structures
001966 (1989) Investigation of traps in InP:Zn single crystals implanted by phosphorus ions
001975 (1989) Electron irradiation effect on dielectic properties of TlInS2 single crystals
001977 (1989) Effect of exchange interaction on metal-dielectric transition in p-InSb (Mn)
001983 (1989) Analysis of precipitate phases in Fe-doped indium phosphide crystals
001984 (1989) About the possibility of double centre formation in InP:Fe:O
001987 (1989)
001A07 (1989)
001A33 (1989)
001A38 (1989)
001A45 (1989)
001A53 (1988) Theoretical and experimental study of Raman scattering and infrared reflectivity in indium phosphide
001A58 (1988) Protective coatings on GaAs and InP. High energy ion scattering analysis
001A60 (1988) Photoconductivity and luminescence spectra of ZnIn2S4 crystals irradiated by γ-quanta
001A62 (1988) On the possibility of formation of associated impurity centers in semi-insulating indium phosphide doped by oxygen
001A71 (1988) Electrical properties of InPe:Fe single crystals implanted by phosphorus ions
001B02 (1988)
001B03 (1988)
001B04 (1988)
001B20 (1988)
001B26 (1988)
001B29 (1988)
001B37 (1988)
Wicri

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