| 000C86 (1999-06) |
| Properties of positron annihilation in metals |
| 000D10 (1999-03-29) |
| Radiative constants in the spectra of ions of the palladium isoelectronic sequence |
| 001277 (1995-11) |
| Identification of new nuclei at and beyond the proton drip line near the doubly magic nucleus 100Sn |
| 001797 (1991) |
| Influence of the electron charge profile near the surface of aluminium, magnesium, and indium on the characteristic electron energy loss spectrum |
| 001833 (1991) |
| Doping effects on mechanical properties and microhardness of superionic copper selenide Cu2-xSe |
| 001883 (1990) |
| Simultaneous fluorimetric determination of aluminum, gallium, indium, and magnesium with 8-hydroxyquinoline in special-purity potassium chloride |
| 001912 (1990) |
| Investigation of isovalent impurity states in GaP using the extended-Hückel and the Mulliken-Wolfsberg-Helmholtz method |
| 001932 (1990) |
| Degradation mechanisms of the contact between metallic films and alkali halide crystals |
| 001943 (1990) |
| Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers |
| 001B53 (1988) |
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| 000002 (2013) |
| Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix |
| 000021 (2013) |
| Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer |
| 000061 (2011) |
| Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice |
| 000065 (2011) |
| Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system |
| 000101 (2010) |
| Peculiarities of Al magic cluster self-assembly on Si( 10 0) surface |
| 000151 (2009) |
| InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix |
| 000152 (2009) |
| InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications |
| 000226 (2007) |
| Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix |
| 000248 (2007) |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000279 (2006) |
| Synthesis and crystal structure of three silver indium double phosphates |
| 000390 (2005) |
| Activation of aluminum metal and its reaction with water |
| 000404 (2004-05) |
| MOCVD Growth and Mg-Doping of InAs Layers |
| 000427 (2004-02) |
| Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots |
| 000445 (2004) |
| Surfactant mediated growth of Sb clusters on Si(111) surface |
| 000463 (2004) |
| Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction |
| 000538 (2003-07) |
| On the Superconducting Transition Temperature for Metallic Nanocrystals |
| 000601 (2003) |
| Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface |
| 000606 (2003) |
| Some regularities in eutectoid transformations in binary systems of plutonium |
| 000834 (2002) |
| Electroluminescence of mercury-like ions on aluminum electrode |
| 000835 (2002) |
| Electroluminescence characteristics of card anthracene-containing polyimide: The effect of the cathode and anode materials |
| 000A41 (2000-10) |
| New Class of Holographic Materials Based on CdF2 Semiconductor Crystals with Bistable Centers. I. Role of Covalence in the Formation of Bistable Centers |
| 000A81 (2000-05-15) |
| Donor impurities and DX centers in the ionic semiconductor CdF2: Influence of covalency |
| 000A88 (2000-05) |
| New approach to the independent ohmic contact formation in the structures with two parallel isotype quantum wells |
| 000A98 (2000-04) |
| Nonlinear Waves in Group III Metals |
| 000B22 (2000-02) |
| Forbidden Optical Transitions Between Impurity Levels in Silicon and Gallium Phosphide |
| 000B66 (2000) |
| Low-voltage cathodic luminescence of Tin and indium ions on aluminum electrodes |
| 000C75 (1999-07) |
| Production of highly dispersed metal powders by electrical explosion in reduced-pressure nitrogen |
| 000D12 (1999-03-15) |
| Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs |
| 000E21 (1998-12-21) |
| Beta strength distribution in neutron-deficient nuclei |
| 001049 (1997-03) |
| Protection of organic thin-film light-emitting diodes |
| 001130 (1997) |
| Coadsorption of Ag and In atoms on Si(111) surface |
| 001223 (1996) |
| The components of the adsorption potential drop at the Ga and In-Ga electrodes in three solvents : A calculation with allowance for hydrophilicity of the Ag(111) single crystal face |
| 001231 (1996) |
| Sb or Cs covered InAs(110) surfaces : Moving eF into conduction band and quantized 2D electron channel |
| 001251 (1996) |
| Electroluminescence determination of heavy metal ions in an acid medium |
| 001270 (1996) |
| A modified model for the metal/solution interface, allowing for hydrophilicity of the Ag(111) single crystal face : An analysis of the capacitance intrinsic to the compact part of the electrical double layer at mercury, gallium, and an indium-gallium alloy in three different solvents |
| 001361 (1995) |
| Phenomena of the specific interaction of metal with solvent and constituents of the adsorption potential drop |
| 001500 (1993-04) |
| Direct detection of silver, bismuth, indium, and thallium in marine riverine suspended matter with a lower detection threshold |
| 001542 (1993) |
| Nernst-Ettingshausen coefficient of high-purity aluminum and indium and the Peierls exponential function |
| 001613 (1992) |
| Static and dynamic characteristics of the bulk and contact electrical resistance of CdCr2Se4 under conditions of stochastic instability of the current |
| 001626 (1992) |
| Redistribution of magnesium in InAs during postimplantation annealing |
| 001710 (1992) |
| Calculations of charge transfer in molten binary systems |
| 001739 (1991) |
| Super-high-strength hermetically metal-coated optical fibres |
| 001755 (1991) |
| Possible derelaxation of p-type InP(110) |
| 001802 (1991) |
| Influence of isovalent doping with In and Sb on the photoluminescence of complexes formed in epitaxial heavily doped p-type GaAs:Ge |
| 001841 (1991) |
| Characteristics of liquid phase epitaxy and of electrophysical properties of epitaxial In0.53Ga0.47As:Sb films |
| 001944 (1990) |
| A new thermodynamic method of calculating melt―solid phase equilibria. The A3B5 system |
| 001969 (1989) |
| Influence of aluminium and indium addition on the properties of superconducting Bi2Sr2CaCu2Oy metal oxide |
| 001988 (1989) |
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| 001A08 (1989) |
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| 001A45 (1989) |
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| 001A76 (1988) |
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| 001A79 (1988) |
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| 001A90 (1988) |
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| 001B21 (1988) |
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| 001B48 (1988) |
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| 001B75 (1988) |
| |
| 001C05 (1987) |
| |
| 001C57 (1987) |
| |
| 001C88 (1986-03-16) |
| Effect of heavy ion implantation and laser annealing on the structural properties of germanium |
| 001D03 (1986) |
| Phase equilibrium in the TlInSe2-AgInSe2 system |
| 001D73 (1985) |
| Stationary photoconductivity of mixed Tl1-xAgxInSe2 crystals |
| 001D96 (1985) |
| |
| 001D97 (1985) |
| |
| 001E10 (1985) |
| |
| 001E19 (1985) |
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| 001E44 (1984) |
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| 001E48 (1984) |
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| 001E53 (1984) |
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| 001E83 (1984) |
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