Analysis
Russie
Racine
Analysis
Russie
Repository
Accueil
Racine
Racine

Serveur d'exploration sur l'Indium

Attention, ce site est en cours de développement !
Attention, site généré par des moyens informatiques à partir de corpus bruts.
Les informations ne sont donc pas validées.

Le cluster Fer - Oxygène

Terms

29Fer
15Oxygène
672Composé minéral
44Irradiation
134Dopage
10Soufre
6Amortissement
5Sodium

Associations

Freq.WeightAssociation
30.144Fer - Oxygène
290.169Composé minéral - Irradiation
500.167Composé minéral - Dopage
180.129Composé minéral - Fer
80.128Dopage - Fer
60.073Composé minéral - Soufre
20.071Amortissement - Dopage
70.070Composé minéral - Oxygène
40.069Composé minéral - Sodium
40.063Amortissement - Composé minéral
30.039Dopage - Irradiation
Documents par ordre de pertinence
001523 (1993) Quantum and classical relaxation times and properties of a heterojunction in selectively doped InP/In0.53Ga0.47As heterostructures
001597 (1992) Transmutation doping and Fermi-level stabilization in neutron-irradiated InP
001748 (1991) Raman scattering in epitaxial GaAs filmd doped with isovalent Bi and In impurities : influence of defects and plasmophonon damping
001786 (1991) Large clusters of electrically active defects in indium phosphide single crystals
001956 (1989) Picosecond photoconductivity in InP:Fe:O
001984 (1989) About the possibility of double centre formation in InP:Fe:O
001998 (1989)
001A53 (1988) Theoretical and experimental study of Raman scattering and infrared reflectivity in indium phosphide
001A62 (1988) On the possibility of formation of associated impurity centers in semi-insulating indium phosphide doped by oxygen
001C49 (1987)
001D78 (1985)
000125 (2010) Chemical analysis of a sulfur-treated InSb(111)A surface by XPS
000135 (2009) Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ
000155 (2009) High-temperature transport and stability of SrFe1-xNbXO3-δ
000205 (2008) Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3
000229 (2007) Redox behavior and transport properties of La0.5- 2xCexSr0.5+xFeO3- δ and La0.5+2yFe1- yNbyO3- δ perovskites
000249 (2007) High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure
000307 (2006) Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy
000974 (2001) Magnetoresistance and shubnikov-de Haas effect in magnetic ion-doped Bi2Se3
001511 (1993) Temperature dependence of the photoluminescence of modified InP:Sn crystals
001526 (1993) Properties of epitaxial indium arsenide doped with rare-earth elements
001527 (1993) Profiles of isotopes in III-V semiconductor compounds formed as a result of bombardment with high-energy α particles
001570 (1993) Extrinsic recombination processes in proton irradiated InAs/GaAs heterostructures grown by molecular beam epitaxy
001624 (1992) Self-compensation of electrically active impurities by intrinsic defects in Pb0.8Sn0.2Te solid solutions
001661 (1992) Long-range effects in semiinsulating semiconductors GaAs and InP irradiated with argon ions
001725 (1991) Transport phenomena in Bi2-xInxTe2.85Se0.15 solid solutions
001728 (1991) Thermal conductivity of PbTe doped simultaneously with In and I
001740 (1991) Structure of the wave functions of impurity centers of transition elements in III-V compounds
001741 (1991) Spectra of the surface photo-emf developed by p-type InP (100) crystals with submonatomic copper films
001750 (1991) Raman light scattering investigation of structural disorder of InP single crystals implanted with Be+ions
001768 (1991) Optical reflection and determination of the characteristics of epitaxial InAs1-x-ySbxPy/InAs structures
001770 (1991) On the nature of radiation defects responsible for fermi level pinning effect in InP
001777 (1991) Many-body effects of a dense two-dimensional electron-hole system in a strained InxGa1-xAs quantum well
001783 (1991) Localization of carbon, nitrogen, and oxygen atoms implanted in the lattices of III-V binary semiconductor crystals
001801 (1991) Influence of isovalent doping with indium on the properties of epitaxial gallium arsenide films grown from the vapor phase
001820 (1991) Exciton states in doped InSe and GaSe single crystals
001826 (1991) Electrical and photoelectric properties of InAsSbP solid solutions
001829 (1991) Effect of doping on exciton states in InSe and GaSe lamellar semiconductors
001835 (1991) Determination of the oscillator strength of F centres in KBr-In by photostimulated luminescence
001839 (1991) Characterization of W defects in electron-irradiated InP
001847 (1991) Behavior of ytterbium in epitaxial p-type GalnSbAs films
001863 (1990) Transmutation doping of indium phosphide and gallium arsenide due to protons and α-particles
001869 (1990) The influence of unixial stress on the hopping conductivity in p-InSb. The anisotropy of the hopping conductivity
001892 (1990) Photoluminescence of epitaxial GaAs:In films prepared by the chloride method
001902 (1990) Mechanism of the influence of isovalent in impurities on the properties and ensemble of defects in GaAs grown by the molecular beam epitaxy method
001909 (1990) Investigation of the kinetics of the photoconductivity of short InP:Fe photoresistors
001915 (1990) Influence of fast-electron irradiation on the edge photoluminescence of epitaxial n-type InP films
001919 (1990) Growth, structure and properties of thin monocrystalline InSb films grown by recrystallization in a narrow gap
001937 (1990) Charge states of tin impurity atoms and their influence on the electical conductivity of In2S3
001950 (1989) The influence of gadolinium doping on the switching effect in indium selenide single crystals
001951 (1989) The effect of electron radiation on thermal and electrophysical properties of n-InP
001961 (1989) Molecular beam epitaxy of semiconductor films and modulated structures
001970 (1989) Hydrogen passivation of donors and acceptors in InP
001972 (1989) Hall-coefficient sign inversion, electrical conductivity, and its anisotropy in highly intercalated NaxInSe single crystals
001975 (1989) Electron irradiation effect on dielectic properties of TlInS2 single crystals
001983 (1989) Analysis of precipitate phases in Fe-doped indium phosphide crystals
001987 (1989)
001A33 (1989)
001A38 (1989)
001A60 (1988) Photoconductivity and luminescence spectra of ZnIn2S4 crystals irradiated by γ-quanta
001A66 (1988) Intrinsic and deep centre charge carriers in indium antimonide
001A71 (1988) Electrical properties of InPe:Fe single crystals implanted by phosphorus ions
001A99 (1988)
001B03 (1988)
001B04 (1988)
001B17 (1988)
001B20 (1988)
001B26 (1988)
001B29 (1988)
001B37 (1988)
001B46 (1988)
001B48 (1988)
001B56 (1988)
001B75 (1988)
001B77 (1987) Transport properties of sodium intercalated indium selenide
001B82 (1987) Sodium intercalation into indium and gallium selenides
001B98 (1987)
001C01 (1987)
001C06 (1987)
001C13 (1987)
001C14 (1987)
001C16 (1987)
001C17 (1987)
001C26 (1987)
001C35 (1987)
001C37 (1987)
001C40 (1987)
001C44 (1987)
001C45 (1987)
001C64 (1987)
001C68 (1987)
001C87 (1987)
001D19 (1986) Electrical properties and positron annihilation in neutron-irradiated n-InP
001D31 (1986)
001D34 (1986)
001D38 (1986)
001D39 (1986)
001D42 (1986)
001D48 (1986)
001D49 (1986)
Wicri

This area was generated with Dilib version V0.5.77.
Data generation: Mon Jun 9 10:27:54 2014. Site generation: Thu Mar 7 16:19:59 2024