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Serveur d'exploration sur l'Indium

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Le cluster Indium Antimonides - N type conductivity

Terms

140Indium Antimonides
79N type conductivity
70Magnetic field
38P type conductivity

Associations

Freq.WeightAssociation
3535Indium Antimonides - N type conductivity
2828Indium Antimonides - Magnetic field
1515N type conductivity - P type conductivity
1515Magnetic field - N type conductivity
Documents par ordre de pertinence
001724 (1991) Transverse conductivity of semiconductors in an ultraquantum magnetic field in the case of Boltzmann statistics
001857 (1991) Absorption of light in compensated semiconductors with the Kane band structure
001861 (1990) Ultrasound absorption in lightly doped compensated n-type indium antimonide at ultralow temperatures
001946 (1990)
001963 (1989) Magneto-resonant absorption from a local center in degenerate n-InSb
001967 (1989) Interference resonance photocurrent in n-InSb
001987 (1989)
001992 (1989)
001B27 (1988)
001B43 (1988)
001C16 (1987)
001C53 (1987)
001C99 (1986) Precise measurement of the free electron g-factor in InSb
001D60 (1986)
001D79 (1985)
001E03 (1985)
001E17 (1985)
001E50 (1984)
001506 (1993) The increase of the binding probability of free electron and hole into Wannier-Mott exciton in a strong magnetic field
001549 (1993) Magnetophotoluminescence of MBE-grown InSb and InAs
001603 (1992) The conductivity anisotropy in uniaxially stressed p-InSb
001629 (1992) Pressure spectroscopy of impurity states and band structure of bismuth telluride
001651 (1992) Metal-insulator transition in heavily doped indium antimonide subjected to a magnetic field
001774 (1991) Mechanisms of the influence of hydrogen on the electrical and photoelectric properties of Pd-p(n)-InP and Pd-n-GaP diode structures
001776 (1991) Mechanism of frequency conversion in an n-type InSb mixer
001779 (1991) Magnetophonon resonance on three types of carriers in p-InSb
001782 (1991) Low temperature resistance of p-InSb(Mn)
001785 (1991) Large-scale impurity potential and nature of the main low-temperature luminescence line of pure n-InSb crystals
001838 (1991) Cooling of electrons and noise in heating electric fields
001848 (1991) Behavior of impurities of p-type GaInSbAs solid solutions
001851 (1991) Auger electron spectroscopy of semiconductor crystals after the application of a pulsed magnetic field
001899 (1990) Noise temperature in compensated n-type InSb:Cr
001926 (1990) Dispersion properties of indium antimonide in a strong magnetic field
001952 (1989) The charge state of hydrogen and hydrogen diffusion in InP and InGaAs
001974 (1989) Electrophysical properties of the ion-implanted p-InSb
001986 (1989)
001A22 (1989)
001A86 (1988)
001A92 (1988)
001B26 (1988)
001B34 (1988)
001B36 (1988)
001B38 (1988)
001B47 (1988)
001C02 (1987)
001C03 (1987)
001C12 (1987)
001C32 (1987)
001C33 (1987)
001C48 (1987)
001C56 (1987)
001C57 (1987)
001C64 (1987)
001D00 (1986) Photoluminescence and laser emission in In0.53Ga0.47As/InP layers
001D25 (1986) Absorption edge of stoichiometric and nonstoichiometric CuInSe2 crystals
001D31 (1986)
001D33 (1986)
001D38 (1986)
001D45 (1986)
001D48 (1986)
001E02 (1985)
001E13 (1985)
001E15 (1985)
001E27 (1985)
001E32 (1984) Studies of the deep levels in p-type InSb under pressure
001E45 (1984)
001E47 (1984)
001E54 (1984)
001E62 (1984)
001E78 (1984)
001E87 (1984)
001E96 (1984)
000057 (2011) The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase
000155 (2009) High-temperature transport and stability of SrFe1-xNbXO3-δ
000229 (2007) Redox behavior and transport properties of La0.5- 2xCexSr0.5+xFeO3- δ and La0.5+2yFe1- yNbyO3- δ perovskites
000249 (2007) High temperature electrical conductivity in ZnSe:In and in CdSe:In under selenium vapor pressure
000661 (2003) High-mobility InAs/AlSb heterostructures for spintronics applications
000B82 (2000) High-pressure synthesis of metastable ternary solid solutions between tetrahedral semiconductors
000D49 (1999) Surface properties of indium pnictides
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
000F45 (1998) InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range
000F48 (1998) GaSb based PV cells with Zn-diffused emitters
000F51 (1998) Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy
000F54 (1998) Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
001077 (1997) The anomalous temperature dependence of the heat capacity of molten InSb in the vicinity of the melting temperature
001239 (1996) New low-temperature thermistors InSb:Mn for nuclear cryogenic detectors
001397 (1995) Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
001528 (1993) Preferential sputtering of the InSb and InP single crystals
001534 (1993) Photomagnetic effect in n-type InSb subjected to strong electric and quantizing magnetic fields
001546 (1993) Mechanisms of dislocation motion and multiplication in ionic and semiconductor crystals
001550 (1993) Magnetoacoustic oscillations in indium due to the frequency dispersion
001576 (1993) Electrical properties of (Sn0.8Ge0.2)1-xInxTe films formed by a laser-evaporation method
001579 (1993) Dynamics of dislocations in InSb and GaAs crystals
001597 (1992) Transmutation doping and Fermi-level stabilization in neutron-irradiated InP
001606 (1992) Superconducting properties of indium-doped Sn1-xGexTe solid solutions
001610 (1992) Studies of Mandelstamm-Brillouin light scattered by the surface of (111)-, (110)-cutted GaAs, and (111)-cutted InSb crystals
001619 (1992) Solid-phase laser doping of CdxHg1-xTe single crystals
001630 (1992) Pressure and temperature dependences of the thermal conductivity of gallium and indium antimonides and their solid solutions
001632 (1992) Polarization dependences of two-photon absorption in narrow-gap InSb and HgCdTe type semiconductors
001635 (1992) Photoluminescence of an epitaxial InSb film on a quasiinsulating p-type InSb substrate
Wicri

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