| 000B68 (2000) |
| LPE growth of GaSb and Sb-based solid solutions |
| 001614 (1992) |
| Stability analysis of quaternary InxGa1-xSbyAs1-y alloys |
| 001D65 (1986) |
| |
| 000451 (2004) |
| Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs |
| 001113 (1997) |
| InGaAsSb growth from Sb-rich solutions |
| 001393 (1995) |
| Conditions for LPE growth of InAs1-x-ySbxBiy/InSb heterostructures |
| 001638 (1992) |
| Phase interaction and heteroepitaxy in the InPAsSb system |
| 001885 (1990) |
| Residual deformation in epitaxial layers of InGaAsSb, InAsSbP, and InAsSb on an InAs substrate |
| 001947 (1989) |
| The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE |
| 001A30 (1989) |
| |
| 001B87 (1987) |
| Peculiarities of liquid phase epitaxy in GaInPAs/InP lattice-matched heterostructures |
| 001C31 (1987) |
| |
| 001D30 (1986) |
| |
| 001E57 (1984) |
| |
| 001E72 (1984) |
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| 000207 (2008) |
| Growth striations and dislocations in highly doped semiconductor single crystals |
| 000785 (2002) |
| Synthesis and optical absorption of solid solutions between InSb and II-VI compounds |
| 000844 (2002) |
| Determination of the melt undercooling required for producing AlxGayIn1-x-ySb1-zBiz/InSb heterostructures |
| 000952 (2001) |
| Preparation, structure, and electrical properties of thin In1-xCdxSb (x = 0.001-0.003) films |
| 000B83 (2000) |
| High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films |
| 000D92 (1999) |
| Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy |
| 000F12 (1998) |
| Vapor-liquid-solid growth of Pb1-xInxTe crystals |
| 000F75 (1998) |
| AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions |
| 001178 (1996-06) |
| High carrier mobility in p-type GaInAsSb/p-InAs heterostructures |
| 001275 (1995-12) |
| Characteristic features of the temperature dependence of the threshold current density of GaInAsSb double-heterostructure lasers with a thin active region |
| 001324 (1995-04) |
| Observation of an electroluminescence of confined carriers at single p-GaInAsSb/ p-InAs type-II broken-gap heterojunctions |
| 001325 (1995-04) |
| GaInAsSb/InAs heterojunctions |
| 001332 (1995-02) |
| Strained thin-layer InAs1-x-ySbxBiy/InSb heterostructures: calculation of certain physical properties |
| 001470 (1994) |
| The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy |
| 001482 (1994) |
| Influence of pressure and temperature on the thermal conductivity of antimonides of gallium and indium and of solid solutions based on them |
| 001516 (1993) |
| Standard-free electron-probe microanalysis of submicron films of HTSC oxides and semiconductors |
| 001690 (1992) |
| Electron-microscope studies of liquid-phase epitaxy of InGaAsP/InGaP/GaAs structures with thin (<10 nm) layers |
| 001812 (1991) |
| Formation of oxide layers on InP in the presence of BiCl3 |
| 001846 (1991) |
| Boundary conditions of the transition from steady-state to unsteday-state regimes of free convection in high-temperature solutions of oxides. Single crystal growth in a steady-state regime |
| 001878 (1990) |
| Structural quality of InAs1-x-ySbxPy-InAs double heterostructures |
| 001A21 (1989) |
| |
| 001A26 (1989) |
| |
| 001A28 (1989) |
| |
| 001B22 (1988) |
| |
| 001C18 (1987) |
| |
| 001C20 (1987) |
| |
| 001C24 (1987) |
| |
| 001C76 (1987) |
| |
| 001C95 (1986) |
| The initial stages of heteroepitaxy from the liquid phase at a low misfit: InGaAsP on GaAs |
| 001E21 (1985) |
| |
| 001E87 (1984) |
| |
| 000002 (2013) |
| Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix |
| 000057 (2011) |
| The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase |
| 000195 (2008) |
| Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm) |
| 000221 (2007) |
| Theoretical confirmation of the crystallization of a compound alloy using the AHP crystal growth method |
| 000248 (2007) |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000363 (2005) |
| Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary |
| 000390 (2005) |
| Activation of aluminum metal and its reaction with water |
| 000515 (2003-10) |
| InAs Based Multicomponent Solid Solutions for Thermophotovoltaic Converters |
| 000594 (2003) |
| Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction |
| 000616 (2003) |
| Preparation and structure of AgGa1-xInxSe2 single crystals |
| 000644 (2003) |
| Interface luminescence and lasing at a type II single broken-gap heterojunction |
| 000687 (2003) |
| Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique |
| 000696 (2003) |
| AlyIn1-ySb1-xBix/InSb photodetecting superlattices |
| 000697 (2003) |
| Adsorptive and electrical properties of InSb-ZnSe films |
| 000799 (2002) |
| Pb and In codeposition in the vacuum growth of PbTe(In) films on Si substrates |
| 000808 (2002) |
| New anion-deficient cubic perovskites: Ba2In1-xCo1+xO5+δ (0 ≤ x ≤ 0.8) and Ba2-xLaxCoInO5+δ (0.2 ≤ x ≤ 0.8) |
| 000854 (2002) |
| AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers |
| 000929 (2001) |
| Verification of the Thomas theoretical framework for A-substituted PbBnNbmO3 relaxor ferroelectrics |
| 000932 (2001) |
| The pillared layered framework of Ba3(In1-xMx)2(HXO4)6 (0 ≤ x ≤ 1; M = Fe, Cr; X = P, As) : synthesis, crystal structure, thermal stability and Mössbauer spectroscopy |
| 000936 (2001) |
| Synthesis and phase composition of NaxMxTi8-xO16(0.67≤x≤2.0; M = Al, Ga, In) |
| 000966 (2001) |
| Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface |
| 000A02 (2001) |
| Effect of low-temperature diffusion annealing on the properties of PbSnTe(In) epilayers |
| 000A15 (2001) |
| A new method for growing thin layers of solid solutions between IV-VI compounds |
| 000B79 (2000) |
| InSb-InAs alloys prepared by rapid quenching (106-108 K/s) |
| 000B95 (2000) |
| EXAFS and electrical studies of new narrow-gap semiconductors : InTe1-xSex and In1-xGaxTe |
| 000D51 (1999) |
| Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases |
| 000D64 (1999) |
| Physicochemical aspects of adhesion of thin MSb (M = In, Ga, Cd) layers |
| 000D77 (1999) |
| Melt growth of InAs1-xPx crystals under controlled vapor pressure |
| 000D81 (1999) |
| Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area |
| 000D96 (1999) |
| Electroepitaxy : the control of the kinetics and morphology of InSb |
| 000E08 (1999) |
| Cluster model for melting and crystallization of thin InSb, GaSb, CdSb, and Ge layers |
| 000F26 (1998) |
| Point defect clusters in Pb1-xInxTe single crystals revealed by X-ray diffuse scattering method |
| 000F50 (1998) |
| Formation of InSb quantum dots in a GaSb matrix |
| 001066 (1997) |
| X-ray microanalysis of Pb1-x-zSnxInzTe solid solutions by the relative intensity ratio procedure |
| 001094 (1997) |
| Rapid and high concentrated permeation of Ga into InSb |
| 001155 (1996-09) |
| Photodiodes based on InAs1-xSbx solid solutions for the spectral band in the range 3-5 μm |
| 001172 (1996-07) |
| Lasing inhomogeneities in buried channel lasers with a p-GaInAsSb active region |
| 001190 (1996-05) |
| High-temperature microhardness of AIIIBV semiconductor compounds |
| 001200 (1996-03) |
| Tunnel-injection laser based on a single p-GaInAsSb/p-InAs type-II broken-gap heterojunction |
| 001282 (1995-10-23) |
| InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy |
| 001307 (1995-07) |
| Dislocation structure of InAs1-x-ySbxBiy/InSb heterostructures |
| 001334 (1995-02) |
| Photoluminescence of CuAlxIn1-xS2 single crystals |
| 001345 (1995) |
| The T-P phase diagrams of amorphous GaSb, InSb and InAs |
| 001430 (1994-07) |
| Radiative recombination in heterostructure LEDs based on limiting-composition GaInAsSb |
| 001434 (1994-06) |
| Recombination near an N-n-GaSb/GaInAsSb heterojunction |
| 001452 (1994-02) |
| Relationship between growth conditions and heterojunction quality in InP/In1-xGaxAs selectively doped heterostructures grown by liquid-phase epitaxy |
| 001467 (1994) |
| Type II heterojunctions in the GaInAsSb/GaSb system |
| 001519 (1993) |
| Role of an additional extremum in the appearance of superconductivity in IV-VI semiconductors having resonant impurity states |
| 001551 (1993) |
| Low-threshold long-wave lasers (λ=3.0-3.6 μm) based on III-V alloys |
| 001559 (1993) |
| Investigation of the structure of the conduction band of InAsSbP solid solutions |
| 001565 (1993) |
| Impurity distribution near a p-GalnAsSb/p-GaAlAsSb heterojunction |
| 001606 (1992) |
| Superconducting properties of indium-doped Sn1-xGexTe solid solutions |
| 001607 (1992) |
| Sulfide passivation of InAs surface |
| 001630 (1992) |
| Pressure and temperature dependences of the thermal conductivity of gallium and indium antimonides and their solid solutions |
