Le cluster Indium Phosphides - Gallium Arsenides
| 001131 (1997) | Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas | |
| 000034 (2012) | Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide | |
| 000128 (2010) | Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity | |
| 000149 (2009) | Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser | |
| 000173 (2009) | Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique | |
| 000208 (2008) | Frequency tuning of diode laser radiation by surface acoustic wave | |
| 000211 (2008) | Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices | |
| 000D91 (1999) | High - brightness LEDs as alternative to lasers and traditional illuminants | |
| 001134 (1997) | A new approach to the cap layer thinning of GaAs based heterostructures with near surface quantum wells | |
| 001343 (1995) | The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP | |
| 001582 (1993) | Crystallization of overcooled A3B5 compounds | |
| 001605 (1992) | Temperature dependence of the binding energy of Wannier-Mott excitons in quantum wells | |
| 001B22 (1988) | ||
| 001B39 (1988) | ||
| 001C36 (1987) | ||
| 000D85 (1999) | InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature | |
| 001269 (1996) | A3B5 based solar cells and concentrating optical elements for space PV modules | |
| 001518 (1993) | Semiclassical theory of interband tunnelling in semiconductor heterostructures | |
| 001527 (1993) | Profiles of isotopes in III-V semiconductor compounds formed as a result of bombardment with high-energy α particles | |
| 001564 (1993) | InGaP/GaAs/InGaAs quantum well lasers prepared by atmospheric pressure metalorganic chemical vapour deposition | |
| 001570 (1993) | Extrinsic recombination processes in proton irradiated InAs/GaAs heterostructures grown by molecular beam epitaxy | |
| 001594 (1992) | p-n junction depth profiling and conductivity type determination using auger electron spectroscopy | |
| 001596 (1992) | Tunnelling processes in broken-gap heterostructures | |
| 001634 (1992) | Picosecond GaAs and InGaAs photoconductive switches obtained by low-temperature metal-organic chemical vapour deposition | |
| 001636 (1992) | Photoelectron phenomena in GaAs layers with a built-in surface quantum heterowell | |
| 001655 (1992) | Magnetoluminescence study of many-body effects in a dense electron-hole plasma of strained InxGa1-xAs/GaAs quantum wells | |
| 001670 (1992) | Influence of the surface electric field on carrier transfert into InGaAs/GaAs single quantum wells | |
| 001677 (1992) | Gunn diodes made of n-InGaAs/n+InP heterostructures | |
| 001684 (1992) | Excitons in dense two-dimensional electron-hole magnetoplasmas | |
| 001696 (1992) | Effects of the interaction of intrasubband and intersubband magnetoplasmons in the emission spectrum of a quasi-2D electron gas | |
| 001698 (1992) | Direct observation of magnetoplasmon-phonon coupled modes in the magnetophotoluminescence spectra of the two-dimensional electron gas in InxGa1-xAs/GaAs quantum wells | |
| 001700 (1992) | Determination of the homogeneity of quantum wells in the InGaAs/GaAs system from photomodulation spectra | |
| 001740 (1991) | Structure of the wave functions of impurity centers of transition elements in III-V compounds | |
| 001758 (1991) | Plasmon-phonon modes nd nonparabolicity of the conduction band of epitaxial InGaAs/InP films | |
| 001764 (1991) | Parameters of the energy band structure of epitaxial films in In1-xGax/InP heterojunctions | |
| 001765 (1991) | Oscillatory photoluminescence excitation in InGaAs/GaAs strained-layer quantum well structures | |
| 001780 (1991) | Magnetoluminescence study of many-body effects in homogeneous quasi-two-dimensional electron-hole plasma in undoped InxGa1-xAs/InP single quantum wells | |
| 001781 (1991) | Magnetic field increased LO-phonon Raman scattering in selectively doped n-AlGaAs/InGaAs/GaAs quantum well | |
| 001809 (1991) | HREM of epitaxial layers in the InAs/GaAs system | |
| 001817 (1991) | Excitons and deexcitons in a neutral 2D magnetoplasma with an integer filling of Landau levels : experiment and theory | |
| 001818 (1991) | Excitonic insulator in a magnetized quasi-2D plasma | |
| 001819 (1991) | Excitonic effects in low density electron-hole plasma in InGaAs/InP quantum wells under magnetic field | |
| 001828 (1991) | Effective carrier masses in a neutral quasi-two-dimensional electron-hole plasma in InGaAs/GaAs quantum wells with a nondegenerate valence band | |
| 001849 (1991) | Band offset determination from conduction band filling in InGaAs/GaAs quantum wells | |
| 001860 (1990) | X-ray diffraction investigation of elastic and plastic deformations in heterostructures with large lattice-period misfits, of the types ZnSexS1-x/GaAs and InP/GaAs | |
| 001862 (1990) | UPS study of the metal-semiconductor interface Ag-A3 B5 (GaAs, InAs, InP, InSb) formation at 10 K | |
| 001889 (1990) | Radiation degradation of solar cells based on InP-CdS heterojunctions | |
| 001894 (1990) | Photoelectric properties of epitaxial GaAs/InGaAs quantum-well heterostructures | |
| 001905 (1990) | Localization effects, energy relaxation, and electron and hole dispersion in selectively doped n-type AlyGa1-yAs/InxGa1-xAs/GaAs quantum wells | |
| 001914 (1990) | Influence of interparticle interactions on the effective masses of carriers in a quasi-two-dimensional electron-hole plasma in quantum wells in In0.53Ga0.47As/InP | |
| 001957 (1989) | Photoelectrical properties of CuInSe2-GaAs heterojunctions | |
| 001A87 (1988) | ||
| 001B29 (1988) | ||
| 001B32 (1988) | ||
| 001B40 (1988) | ||
| 001C19 (1987) | ||
| 001C31 (1987) | ||
| 001C70 (1987) | ||
| 001C81 (1987) | ||
| 001C93 (1986) | The origin of the minority impurity states in heavily doped semiconductors | |
| 001D16 (1986) | Electrophysical properties of In2Te2-InAs heterojunctions | |
| 001D40 (1986) | ||
| 001D55 (1986) | ||
| 001D83 (1985) | ||
| 001D93 (1985) | ||
| 001E26 (1985) | ||
| 001E69 (1984) | ||
| 001E70 (1984) | ||
| 001E71 (1984) | ||
| 001E94 (1984) | ||
| 000047 (2012) | Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier | |
| 000064 (2011) | Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching | |
| 000066 (2011) | Quantum dot laser | |
| 000068 (2011) | Photoreflectance study of indium segregation in the InGaAs quantum well | |
| 000088 (2011) | 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber | |
| 000093 (2010) | Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system | |
| 000095 (2010) | Semiconductor Nanostructures Modified by the UV Laser Radiation | |
| 000099 (2010) | Properties of mid-IR diodes with n-InAsSbP/n-InAs interface | |
| 000110 (2010) | Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern | |
| 000120 (2010) | Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current | |
| 000124 (2010) | Compact optoelectronic oscillators using WGM modes on fused silica and MgF2 mini-disks resonators | |
| 000126 (2010) | Band structure at heterojunction interfaces of GaInP solar cells | |
| 000136 (2009) | Stimulated-emission wavelength switching in optically pumped InGaAs/AIGaInAs laser heterostructures | |
| 000156 (2009) | High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures | |
| 000157 (2009) | High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm | |
| 000172 (2009) | Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn 6-layer | |
| 000174 (2009) | Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters | |
| 000189 (2008) | Quantum dot photonics : edge emitter, amplifier and VCSEL | |
| 000190 (2008) | Quantum dot diode lasers for optical communication systems | |
| 000192 (2008) | Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power | |
| 000198 (2008) | Modifiée! transfer matrix method for quantum cascade lasers | |
| 000203 (2008) | Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes | |
| 000210 (2008) | Emission properties of InGaAs/GaAs heterostructures with δ | |
| 000213 (2008) | Double integrated nanostructures for pulsed 0.9-μm laser diodes | |
| 000218 (2008) | Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure | |
| 000219 (2008) | A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain | |
| 000261 (2007) | Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping | |
| 000B83 (2000) | High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films | |
| 000D49 (1999) | Surface properties of indium pnictides | |
| 000D74 (1999) | Modelling of the current-voltage characteristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnelling |
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