| 000D63 (1999) |
| Plasma-assisted MBE growth of GaN and InGaN on different substrates |
| 000233 (2007) |
| Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates |
| 000246 (2007) |
| InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range |
| 000474 (2004) |
| High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy |
| 000264 (2007) |
| Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition |
| 000307 (2006) |
| Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy |
| 000454 (2004) |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000496 (2003-12-29) |
| Photoluminescence, depth profile, and lattice instability of hexagonal InN films |
| 000637 (2003) |
| MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells |
| 000937 (2001) |
| Surface segregation in group-III nitride MBE |
| 000963 (2001) |
| Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator |
| 000978 (2001) |
| MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures |
| 000D68 (1999) |
| Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE |
| 000D84 (1999) |
| Indium droplet formation during molecular beam epitaxy of InGaN |
| 001309 (1995-07) |
| Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates |
| 000226 (2007) |
| Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix |
| 000280 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000349 (2005) |
| Properties of InGaAsN heterostructures emitting at 1.3-1.55 μm |
| 000363 (2005) |
| Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary |
| 000365 (2005) |
| MnGeP2 thin films grown by molecular beam epitaxy |
| 000387 (2005) |
| Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs |
| 000651 (2003) |
| InGaAsN/GaAs QD and QW structures grown by MOVPE |
| 000809 (2002) |
| Mosaicity and electrical and optical properties of group III nitrides |
| 000823 (2002) |
| InN growth by plasma-assisted molecular beam epitaxy |
| 000890 (2001-08) |
| Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy |
| 000906 (2001-04) |
| Superstructure Ga4InAs5 |
| 000930 (2001) |
| Thermodynamic analysis of the MBE growth of GaInAsN |
| 000939 (2001) |
| Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces |
| 000977 (2001) |
| MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source |
| 000984 (2001) |
| InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates |
| 000A19 (2001) |
| 1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis : Special issue papers |
| 000B84 (2000) |
| Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties |
| 000E61 (1998-07) |
| Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures |
| 000F06 (1998-01) |
| High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature |
| 000F50 (1998) |
| Formation of InSb quantum dots in a GaSb matrix |
| 000F76 (1998) |
| A thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxy |
| 001063 (1997-01) |
| Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates |
| 001085 (1997) |
| Structural characterization of self-assembled quantum dot structures by X-ray diffraction techniques |
| 001115 (1997) |
| High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots |
| 001246 (1996) |
| Internal strain energy of Ax3B13-xN ternary solid solutions of cubic modification |
| 001367 (1995) |
| Molecular beam epitaxial growth of InSb/GaAs(100) and InSb/Si(100) heteroepitaxial layers (thermodynamic analysis and characterization) |
| 000018 (2013) |
| New ternary indide La2Pd3In4 |
| 000026 (2013) |
| Ce2PdIng, Ce3PdIn11 and Ce5Pd2In19-members of homological series based on AuCu3- and PtHg2-type structural units |
| 000035 (2012) |
| Phase formation in the Li2Mo0o4-K2MoO4-In2(MoO4)3 system and crystal structures of new compounds K3InMo4O15 and LiK2In(MoO4)3 |
| 000043 (2012) |
| Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction |
| 000180 (2009) |
| A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth |
| 000185 (2008) |
| The Ag2S-In2S3-Si(Ge)S2 systems and crystal structure of quaternary sulfides Ag2In2Si(Ge)S6 |
| 000205 (2008) |
| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
| 000212 (2008) |
| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs |
| 000215 (2008) |
| Crystal structure of CeRu0.88In2 |
| 000224 (2007) |
| The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency |
| 000225 (2007) |
| The crystal structure of Ce16Ru8In37 |
| 000227 (2007) |
| Solid-state spreading of oxides : Morphology and conductivity of In2O3-based films |
| 000228 (2007) |
| Single crystal investigation of the ternary indides Ce2Pd4In5 and CePdIn4 |
| 000230 (2007) |
| Recent developments in the III-nitride materials |
| 000239 (2007) |
| Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor® |
| 000241 (2007) |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000251 (2007) |
| Growth and defects of GaAs and InGaAs films on porous GaAs substrates |
| 000263 (2007) |
| Crystal structure of the new ternary compound Ce3Ru2In3 |
| 000267 (2007) |
| Charge accumulation in ultrathin Cs/n-GaN and Cs/n-InGaN interfaces |
| 000270 (2007) |
| Ce2Ru2In3 and Ce3Ru2In2 : Site exchange in ternary indides of a new structure type |
| 000273 (2007) |
| Band bending of n-InN epilayers and exact solution of the classical Thomas-Fermi equation |
| 000275 (2007) |
| Analysis of the local indium composition in ultrathin InGaN layers |
| 000279 (2006) |
| Synthesis and crystal structure of three silver indium double phosphates |
| 000289 (2006) |
| Single crystal investigation of Ce6Pd12In5 |
| 000294 (2006) |
| Role of fluctuations in carrier transfer in semiconductor heterostructures |
| 000295 (2006) |
| Resonant Raman scattering in InGaN alloys |
| 000299 (2006) |
| Plasmonic effects in InN-based structures with nano-clusters of metallic indium |
| 000301 (2006) |
| Photoluminescence of n-InN with low electron concentrations |
| 000329 (2006) |
| Analytical model for the quantum-confined Stark effect including electric field screening by non-equilibrium carriers |
| 000338 (2005) |
| Synchrotron X-ray topographic study of dislocations and stacking faults in InAs |
| 000345 (2005) |
| Resonant Raman spectroscopy on InN |
| 000360 (2005) |
| Negative quasiclassical magnetoresistance in a high density two-dimensional electron gas in a AlxGa1-xN/GaN heterostructure |
| 000362 (2005) |
| Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers |
| 000366 (2005) |
| Manifestation of the equilibrium hole distribution in photoluminescence of n-InN |
| 000372 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000393 (2005) |
| A gauge invariant approach to the raman scattering in heavily doped crystals |
| 000397 (2004-06-07) |
| Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy |
| 000411 (2004-04) |
| The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System |
| 000464 (2004) |
| Mie resonances, infrared emission, and the band gap of InN |
| 000475 (2004) |
| Growth and optical properties of InAs/GaAs quantum dot structures |
| 000482 (2004) |
| Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
| 000485 (2004) |
| Effect of growth kinetics on the structural and optical properties of quantum dot ensembles |
| 000491 (2004) |
| Correlations between electrical and optical properties for OMVPE InN |
| 000498 (2003-12-08) |
| Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy |
| 000547 (2003-05-26) |
| A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy |
| 000596 (2003) |
| The incommensurate structure of K3In(PO4)2 |
| 000602 (2003) |
| Structural perfection of four-layer GaxIn1-xAsyP1-y laser heterostructures |
| 000612 (2003) |
| Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices |
| 000613 (2003) |
| Quantum-dot-like composition fluctuations in near-field magneto-photoliminescence [photoluminescence] spectra of InGaAsN alloys |
| 000619 (2003) |
| Photoluminescence and Raman study of hexagonal InN and In-rich InGaN alloys |
| 000649 (2003) |
| InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth |
| 000650 (2003) |
| InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source |
| 000653 (2003) |
| InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy |
| 000655 (2003) |
| InAs quantum dots in multilayer GaAs-based heterostructures |
| 000664 (2003) |
| Growth of in-doped PbTe films on Si substrates |
| 000675 (2003) |
| Energy gap and optical properties of InxGa1-xN |
| 000690 (2003) |
| Band gap of hexagonal InN and InGaN alloys |
| 000704 (2002-12) |
| MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells |
| 000717 (2002-09) |
| Synthesis and Crystal Structure of New Double Indium Phosphates MI3In(PO4)2 (MI = K and Rb) |
