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| Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells |
| 000190 (2008) |
| Quantum dot diode lasers for optical communication systems |
| 000377 (2005) |
| Epitaxial growth of quantum-dot heterostructures on metamorphic buffers |
| 000A19 (2001) |
| 1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis : Special issue papers |
| 000156 (2009) |
| High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures |
| 000157 (2009) |
| High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm |
| 000192 (2008) |
| Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power |
| 000359 (2005) |
| Non-linear wave mixing in GaAs/InGaAs/InGaP butt-joint diode lasers |
| 000382 (2005) |
| Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral range |
| 000456 (2004) |
| Photoreflection from a locally optically pumped semiconductor laser structure |
| 000457 (2004) |
| Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures |
| 000608 (2003) |
| SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100% |
| 000662 (2003) |
| High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells |
| 000699 (2003) |
| 14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers |
| 000820 (2002) |
| Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes |
| 000B32 (2000) |
| Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode |
| 000B58 (2000) |
| Optical gain in InAs/InGaAs quantum-dot structures : Experiments and theoretical model |
| 000B80 (2000) |
| InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers |
| 000B87 (2000) |
| Gaas-based 1.3 μm InGaAs quantum dot lasers : A status report : Special issue papers |
| 000D61 (1999) |
| Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction |
| 001068 (1997) |
| Vertically coupled quantum dot lasers: First device oriented structures with high internal quantum efficiency |
| 001123 (1997) |
| Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers |
| 000149 (2009) |
| Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser |
| 000198 (2008) |
| Modifiée! transfer matrix method for quantum cascade lasers |
| 000203 (2008) |
| Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes |
| 000208 (2008) |
| Frequency tuning of diode laser radiation by surface acoustic wave |
| 000213 (2008) |
| Double integrated nanostructures for pulsed 0.9-μm laser diodes |
| 000219 (2008) |
| A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain |
| 000232 (2007) |
| Quantum-dot superluminescent diodes with improved performance |
| 000290 (2006) |
| Simulations of light -current and spectral characteristics of InGaAlAs/InP semiconductor lasers |
| 000331 (2006) |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000373 (2005) |
| High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence |
| 000440 (2004) |
| Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain |
| 000446 (2004) |
| Structural diagnostics of 'quantum' layers by X-ray diffraction and standing waves |
| 000459 (2004) |
| Non-universal scaling in the integer quantum Hall effect regime in two-dimensional electron gas in InGaAs/InP heterostructures |
| 000475 (2004) |
| Growth and optical properties of InAs/GaAs quantum dot structures |
| 000480 (2004) |
| Electron phase and spin decoherence in the vicinity of the second subband edge in an asymmetrical quantum well |
| 000600 (2003) |
| Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy |
| 000611 (2003) |
| Recent advances in long wavelength GaAs-based quantum dot lasers |
| 000652 (2003) |
| InAsSb/InAsSbP current-tunable laser with narrow spectral line width |
| 000654 (2003) |
| InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain |
| 000663 (2003) |
| Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences |
| 000807 (2002) |
| New diode lasers with leaking emission in an optical cavity |
| 000814 (2002) |
| Magnetic field induced Wigner crystal in two-dimensional electron gas in InGaAs/InP |
| 000822 (2002) |
| Indium segregation kinetics in MOVPE of InGaN-based heterostructures |
| 000828 (2002) |
| High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures |
| 000976 (2001) |
| Magnetic field induced insulating phase in two-dimensional electron gas in InGaAs/InP : The Wigner solid |
| 000985 (2001) |
| InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range |
| 000997 (2001) |
| Energy diagram and recombination mechanisms in InGaN/AlGaN/GaN heterostructures with quantum wells |
| 000A05 (2001) |
| Dependence of the radiation pattern of a leaky-mode, quantum-well heterolaser on the pump current |
| 000A12 (2001) |
| Carrier relaxation dynamics in self-assembled quantum dots studied by artificial control of nonradiative losses |
| 000A18 (2001) |
| 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy |
| 000A20 (2001) |
| 'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53-1.55 μm) laser diodes |
| 000B90 (2000) |
| Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers |
| 000B91 (2000) |
| Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure |
| 000B93 (2000) |
| Electron drift velocity of the two-dimensional electron gas in compound semiconductors |
| 000C04 (2000) |
| Brightness and filamentation of a beam from powerful cw quantum-well In0.2Ga0.8As/GaAs lasers |
| 000C13 (2000) |
| "Unusual" temperature behavior of the photoluminescence of the InP and InGaAs quantum dots under quasi-resonance excitation |
| 000D54 (1999) |
| Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm |
| 000D83 (1999) |
| Interaction of low-density 2DEG with acoustic phonons |
| 000D88 (1999) |
| High-power and high-temperature operation of InGaAsP/InP multiple quantum well lasers |
| 000E11 (1999) |
| Angular distribution of the radiation from quantum-well 'leaky-wave' InGaAs/GaAs lasers |
| 000F22 (1998) |
| Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate |
| 000F63 (1998) |
| Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures |
| 001090 (1997) |
| Semiconductor lasers with tunnel-coupled waveguides emitting at the wavelength of 980 nm |
| 001095 (1997) |
| Radiation characteristics of injection lasers based on vertically coupled quantum dots |
| 001110 (1997) |
| Investigations of the spectral characteristics of 980-nm InGaAs-GaAs-AlGaAs lasers |
| 001114 (1997) |
| InGaAs/GaAs quantum dot lasers with ultrahigh characteristic temperature (T0 = 385 K) grown by metal organic chemical vapour deposition |
| 001120 (1997) |
| Electronic g factor in biased quantum wells |
| 001203 (1996-02-26) |
| Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes |
| 001245 (1996) |
| Investigation of the mode structure of InAsSb/InAsSbP lasers with respect to spectroscopic applications |
| 001344 (1995) |
| The excitonic structure of absorption and magnetoabsorption spectra near the type I-II transition in strained (In, Ga)As/GaAs heterostructures |
| 001474 (1994) |
| Quantum wires with the tunable width of conducting channel in In0.53Ga0.47As/InP heterostructures |
| 001497 (1994) |
| A study of laser emission wavelength variations in 1.5 μm InGaAsP/InP BRS laser diodes: theoretical model and experiment |
| 001685 (1992) |
| Excitonic effects in neutral electron-hole magnetoplasma in quantum wells at low temperatures |
| 000047 (2012) |
| Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier |
| 000066 (2011) |
| Quantum dot laser |
| 000091 (2010) |
| Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction |
| 000110 (2010) |
| Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern |
| 000120 (2010) |
| Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current |
| 000136 (2009) |
| Stimulated-emission wavelength switching in optically pumped InGaAs/AIGaInAs laser heterostructures |
| 000151 (2009) |
| InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix |
| 000170 (2009) |
| Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures |
| 000189 (2008) |
| Quantum dot photonics : edge emitter, amplifier and VCSEL |
| 000191 (2008) |
| Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range |
| 000218 (2008) |
| Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure |
| 000223 (2007) |
| The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots |
| 000241 (2007) |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000266 (2007) |
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| 000272 (2007) |
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| 000276 (2006) |
| Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots |
| 000277 (2006) |
| Two-frequency coupled-cavity vertical-cavity surface-emitting lasers |
| 000322 (2006) |
| Diode laser spectroscopy of H2O and CO2 in the 1.877-μm region for the in situ monitoring of the martian atmosphere |
| 000334 (2005) |
| Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates |
| 000341 (2005) |
| Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum |
| 000342 (2005) |
| Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers |
| 000347 (2005) |
| Quantum dot VCSELs |
| 000436 (2004) |
| X-ray diagnostics of heterostructures with quantum dots |
| 000438 (2004) |
| Weak antilocalization in quantum wells in tilted magnetic fields |
