Le cluster Electrical conductivity - Temperature
| 001666 (1992) | Investigation of structure defects in epitaxial indium arsenide films | |
| 001825 (1991) | Electrical and photoelectric properties of narrow-gap GaInSbAs:Mn solid solutions | |
| 001619 (1992) | Solid-phase laser doping of CdxHg1-xTe single crystals | |
| 001674 (1992) | Influence of indium on the energy spectrum of Pb1-xSnxTe | |
| 001725 (1991) | Transport phenomena in Bi2-xInxTe2.85Se0.15 solid solutions | |
| 001848 (1991) | Behavior of impurities of p-type GaInSbAs solid solutions | |
| 001989 (1989) | ||
| 001563 (1993) | Influence of intercalation of Li and Ba on the electrical properties of InSe | |
| 001597 (1992) | Transmutation doping and Fermi-level stabilization in neutron-irradiated InP | |
| 001613 (1992) | Static and dynamic characteristics of the bulk and contact electrical resistance of CdCr2Se4 under conditions of stochastic instability of the current | |
| 001629 (1992) | Pressure spectroscopy of impurity states and band structure of bismuth telluride | |
| 001669 (1992) | Injection and thermostimulated currents in MnIn2S4 single crystals | |
| 001671 (1992) | Influence of the indium impurity on the electrophysical properties of Pb1-xSnxTe with x>0.3 | |
| 001675 (1992) | Impurity states in In of GeTe | |
| 001687 (1992) | Equilibrium parameters of deep bulk levels in indium antimonide | |
| 001762 (1991) | Photoactive absorption in thin CuInSe2 films | |
| 001803 (1991) | Indium impurity states in Pb1-xSnxSe solid solutions | |
| 001826 (1991) | Electrical and photoelectric properties of InAsSbP solid solutions | |
| 001897 (1990) | Optical absorption and photoelectric properties of Ga2In4S9 single crystals | |
| 001950 (1989) | The influence of gadolinium doping on the switching effect in indium selenide single crystals | |
| 001969 (1989) | Influence of aluminium and indium addition on the properties of superconducting Bi2Sr2CaCu2Oy metal oxide | |
| 001972 (1989) | Hall-coefficient sign inversion, electrical conductivity, and its anisotropy in highly intercalated NaxInSe single crystals | |
| 001A61 (1988) | Phase transitions and polytypes in β-TlInS2 ferroelectric-semiconductor | |
| 001A72 (1988) | Direct optical transitions in CdGaInS4 | |
| 001B05 (1988) | ||
| 001C34 (1987) | ||
| 001D73 (1985) | Stationary photoconductivity of mixed Tl1-xAgxInSe2 crystals | |
| 001D74 (1985) | Protoluminescence and photoconductivity of indium selenide single crystals doped with rare-earth elements | |
| 001E32 (1984) | Studies of the deep levels in p-type InSb under pressure | |
| 001E97 (1984) | ||
| 000423 (2004-02) | Structures Based on Cu(Ag)InnSm Semiconductor Compounds | |
| 001501 (1993) | Tunnel effect as the cause of the current limited by contact emission in an In2O3-ZnSe-(Zn1-xCdxTe)1-y(In2Te3)y-In heterostructure | |
| 001502 (1993) | Transport phenomena in Pb0.78Sn0.22Te with high in impurity concentrations | |
| 001526 (1993) | Properties of epitaxial indium arsenide doped with rare-earth elements | |
| 001529 (1993) | Potosensitivity of n-Cd0.8Zn0.2S-p-CulnSe2 heterojunctions | |
| 001536 (1993) | Photoelectric properties of n-CdS:In-p-CuInSe2 heterojunctions | |
| 001576 (1993) | Electrical properties of (Sn0.8Ge0.2)1-xInxTe films formed by a laser-evaporation method | |
| 001603 (1992) | The conductivity anisotropy in uniaxially stressed p-InSb | |
| 001617 (1992) | Some regularities in the photoconductivity spectra of InSe doped with rare-earth ions | |
| 001628 (1992) | Pyroelectric properties of a TlInS2 single crystal in the temperature range 1.5-100 K | |
| 001640 (1992) | Optoelectronic properties of indium-doped zinc selenide | |
| 001651 (1992) | Metal-insulator transition in heavily doped indium antimonide subjected to a magnetic field | |
| 001657 (1992) | Luminescence of chromium ions in single crystals of semiconducting spinel CdIn2S4:Cr | |
| 001661 (1992) | Long-range effects in semiinsulating semiconductors GaAs and InP irradiated with argon ions | |
| 001663 (1992) | Isovalent gallium and arsenic impurity doping of InP grown by liquid-phase epitaxy | |
| 001673 (1992) | Influence of intercalation by sodium and potassium nitrites on physical properties of indium monoselenide | |
| 001683 (1992) | Fabrication and properties of isotypic heterostructures based on n-type CuInSe2 | |
| 001709 (1992) | Characteristics of an electronic phase transition accompanied by a change in the valence of Yb in YbInCu4 | |
| 001712 (1992) | Antiferromagnetic interaction of conduction electrons with local magnetic moments in Pb1#7B========hstok;xMnxTe | |
| 001724 (1991) | Transverse conductivity of semiconductors in an ultraquantum magnetic field in the case of Boltzmann statistics | |
| 001729 (1991) | Thermal and electrical properties of CuInSe2 films formed by evaporation from or two sources | |
| 001737 (1991) | T-H lines in the cluster spin glass BaFe8.4In3.6O19 | |
| 001767 (1991) | Optical spectrum evidence for thermal instability in the PbTe:In:Ga system resulting from a local instability of the lead telluride lattice | |
| 001779 (1991) | Magnetophonon resonance on three types of carriers in p-InSb | |
| 001841 (1991) | Characteristics of liquid phase epitaxy and of electrophysical properties of epitaxial In0.53Ga0.47As:Sb films | |
| 001847 (1991) | Behavior of ytterbium in epitaxial p-type GalnSbAs films | |
| 001857 (1991) | Absorption of light in compensated semiconductors with the Kane band structure | |
| 001872 (1990) | The electrophysical properties of CdMIn2O5, CdM'InO4, and CdBaInO8 and solid solutions based on them | |
| 001880 (1990) | Staggered-lineup heterojunctions in the system of GaSb-InAs | |
| 001916 (1990) | Indium impurity states in PbS | |
| 001925 (1990) | Doping of PbTe and Pb1-xSnxTe with gallium and indium | |
| 001934 (1990) | Critical behaviour of semiconductor spin glasses (CuCr2Se4)x(Cu0.5Me0.5Cr2Se4)1-x (Me=In, Ga; 0≤x<0.1) | |
| 001951 (1989) | The effect of electron radiation on thermal and electrophysical properties of n-InP | |
| 001970 (1989) | Hydrogen passivation of donors and acceptors in InP | |
| 001973 (1989) | Fundamental optical absorption edge in MnIn2Te4 single crystals | |
| 001975 (1989) | Electron irradiation effect on dielectic properties of TlInS2 single crystals | |
| 001987 (1989) | ||
| 001A59 (1988) | Photoconductivity, cathodoluminescence, and optical absorption of CdIn2S2Se2 single crystals | |
| 001A60 (1988) | Photoconductivity and luminescence spectra of ZnIn2S4 crystals irradiated by γ-quanta | |
| 001A66 (1988) | Intrinsic and deep centre charge carriers in indium antimonide | |
| 001A71 (1988) | Electrical properties of InPe:Fe single crystals implanted by phosphorus ions | |
| 001B47 (1988) | ||
| 001B52 (1988) | ||
| 001B74 (1988) | ||
| 001B93 (1987) | Free carrier absorption in In1-xGaxAs | |
| 001C16 (1987) | ||
| 001C32 (1987) | ||
| 001C36 (1987) | ||
| 001C44 (1987) | ||
| 001C64 (1987) | ||
| 001C66 (1987) | ||
| 001C85 (1987) | ||
| 001D06 (1986) | Lattice thermal expansion in CuGaTe2 and CuInTe2 compounds over the temperature range 80 to 650 K from X-ray diffraction data | |
| 001D07 (1986) | Kinetics of compositional ordering in Pb2B′B========Prime;O6 crystals | |
| 001D12 (1986) | High magnetoresistance in bipolar semiconductors by impurity concentration optimisation | |
| 001D24 (1986) | Anomalous temperature dependence of the band gap in AgGaSe2 and AgInSe2 | |
| 001D39 (1986) | ||
| 001D69 (1986) | ||
| 001D81 (1985) | ||
| 001E15 (1985) | ||
| 001E55 (1984) | ||
| 000119 (2010) | Effect of Pressure on the Electrical Conductivity of p - TlInSe2 Single Crystals | |
| 000179 (2009) | About deep impurity centers in InAs | |
| 000503 (2003-12) | Effect of Electron Irradiation on the Galvanomagnetic Properties of InxBi2 - xTe3 Semiconductor Single Crystals | |
| 000589 (2003-01) | Lateral Electronic Transport in Short-Period InAs/GaAs Superlattices at the Threshold of Quantum Dot Formation | |
| 000597 (2003) | The conductivity of disordered 2D systems: from weak to strong localization | |
| 000738 (2002-06-15) | Quantum corrections to conductivity: From weak to strong localization | |
| 000889 (2001-08) | Effect of Deviations from Stoichiometry on Electrical Conductivity and Photoconductivity of CuInSe2 Crystals | |
| 000908 (2001-04) | Photodiodes for a 1.5-4.8 μm Spectral Range Based on Type-II GaSb/InGaAsSb Heterostructures | |
| 000913 (2001-03) | Type II Heterojunctions in an InGaAsSb/GaSb System: Magnetotransport Properties |
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