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Serveur d'exploration sur l'Indium

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Le cluster Indium - Impurity

Terms

330Indium
127Impurity
108Silicon
75Gallium
413Theoretical study
119Gallium compounds
151Semiconductor quantum dots
123Semiconductor heterojunctions

Associations

Freq.WeightAssociation
5757Impurity - Indium
5050Indium - Silicon
5050Gallium - Indium
4141Indium - Theoretical study
3737Gallium compounds - Theoretical study
3232Semiconductor quantum dots - Theoretical study
3030Gallium compounds - Semiconductor heterojunctions
1717Semiconductor heterojunctions - Theoretical study
Documents par ordre de pertinence
000B22 (2000-02) Forbidden Optical Transitions Between Impurity Levels in Silicon and Gallium Phosphide
000D20 (1999-03) Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review
001B21 (1988)
000427 (2004-02) Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots
000517 (2003-10) Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields
000645 (2003) Interaction of chloride anion and chlorine atom with indium and gallium surfaces: A quantum-chemical study
000871 (2001-10) Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities
000A41 (2000-10) New Class of Holographic Materials Based on CdF2 Semiconductor Crystals with Bistable Centers. I. Role of Covalence in the Formation of Bistable Centers
000A69 (2000-06-15) Optical transitions in broken gap heterostructures
000A72 (2000-06-01) Double-step resistive superconducting transitions of indium and gallium in porous glass
000A81 (2000-05-15) Donor impurities and DX centers in the ionic semiconductor CdF2: Influence of covalency
000A87 (2000-05) Photocapacitance Effect in a Monopolar Metal-Insulator-Semiconductor Capacitor at Low Temperatures
000B08 (2000-03) Structure of the Metastable Centers of the Group-III Atoms in IV-VI Crystals
000C17 (1999-12-06) Polaron Effects in Quantum Dots
000C28 (1999-11-15) Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions
000C44 (1999-10) Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method
000C48 (1999-09) Thermo- and photostimulated depolarization in self-compensated CdF2:Ga and CdF2:In crystals
000C59 (1999-09) GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts
000C76 (1999-07) Production and investigation of AgIn5S8/(InSe, GaSe) heterojunctions
000C78 (1999-07) Heterojunctions utilizing CuInxGa1-xTe2 thin films
000D06 (1999-04) Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures
000D56 (1999) Quantum-chemical investigation of interaction of water molecules with surfaces of metal electrodes
000E29 (1998-11) Interband resonant tunneling in superconductor heterostructures in a quantizing magnetic field
000E33 (1998-10) Electron-hole Coulomb interaction in InGaN quantum dots
000E71 (1998-05-15) Structural model for the Si(100)4×3-In surface phase
000E94 (1998-03) Photosensitivity of porous silicon-layered III-VI semiconductors heterostructures
000F04 (1998-01) Photoelectric properties of structures based on TlInS2 single crystals
000F96 (1997-10) Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy
001015 (1997-07-15) Structural model for the Si(111)-4×1-In reconstruction
001059 (1997-01) Waveguide properties of gallium, aluminum, and indium nitride heterostructures
001613 (1992) Static and dynamic characteristics of the bulk and contact electrical resistance of CdCr2Se4 under conditions of stochastic instability of the current
001624 (1992) Self-compensation of electrically active impurities by intrinsic defects in Pb0.8Sn0.2Te solid solutions
001744 (1991) Slow relaxation of excited acceptor states in silicon
001767 (1991) Optical spectrum evidence for thermal instability in the PbTe:In:Ga system resulting from a local instability of the lead telluride lattice
001778 (1991) Manifestation of inelastic scattering of free high-energy carriers in heavily doped CdxHg1-xTe
001833 (1991) Doping effects on mechanical properties and microhardness of superionic copper selenide Cu2-xSe
001898 (1990) On the reasons of the off-centre position of excited Ga+ and In+ ions in alkali halides
001943 (1990) Ambipolar diffusion coefficient in molecular-beam-epitaxy-grown silicon layers
001944 (1990) A new thermodynamic method of calculating melt―solid phase equilibria. The A3B5 system
001B53 (1988)
001B61 (1988)
001E56 (1984)
001E96 (1984)
000001 (2014) Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factors
000004 (2013) Thermodynamics of reaction of praseodymium with gallium-indium eutectic alloy
000005 (2013) Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD
000007 (2013) Thermodynamic properties of uranium in Ga-In based alloys
000008 (2013) Thermodynamic properties of lanthanum in gallium-indium eutectic based alloys
000017 (2013) Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals
000033 (2012) Self-assembly of C60 fullerenes on quasi-one-dimensional Si(111)4×1-In surface
000038 (2012) Ordered Mn-diluted Au/Si(111) reconstructions
000044 (2012) First-principles study of Si(111)√31 x √31-In reconstruction
000051 (2012) Characterization of Si(111)√3 x √3-(Au,In) surface by optical second-harmonic generation
000059 (2011) Structural transformations in (Au,In)/Si(111) system and their effect on surface conductivity
000076 (2011) Interplay between adsorbed C60 fullerenes and point defects on a Si(111)3 x 3-In reconstructed surface
000085 (2011) C60 adsorption onto the one-atomic-layer In films on Si(111) surface
000092 (2010) Thin film removal mechanisms in ns-laser processing of photovoltaic materials
000101 (2010) Peculiarities of Al magic cluster self-assembly on Si( 10 0) surface
000116 (2010) Formation of microtower structures on nanosecond laser ablation of liquid metals
000121 (2010) Cooperative phenomena in self-assembled nucleation of 3 x 4-In/Si(100) surface magic clusters
000187 (2008) Self-diffusion slowdown in liquid indium and gallium metals under nanoconfinement
000207 (2008) Growth striations and dislocations in highly doped semiconductor single crystals
000220 (2007) Ultrafast x-ray source using liquid metal target
000265 (2007) Chemisorption interaction of liquid electrodes of gallium and In-Ga, Cd-Ga and Tl-Ga alloys with solvents in a wide range of their donor numbers
000364 (2005) Modified Si(100)4 × 3-In nanocluster arrays
000376 (2005) Experimental studies of a thermionic diode with a solid insulating interelectrode medium
000390 (2005) Activation of aluminum metal and its reaction with water
000394 (2005) 384x288 MCT LWIR FPA
000408 (2004-05) Determining Parameters of a Multilayer Heterostructure by Joint Analysis of the X-ray Rocking Curves Measured for Various Crystallographic Planes
000410 (2004-04) Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer
000416 (2004-03-15) Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells
000421 (2004-03) Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate
000426 (2004-02) Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers
000434 (2004-01) Donor Compensation in the Depletion Layer of CdF2 Crystals with a Schottky Barrier
000488 (2004) Determination of the E2/M1 amplitude ratio in atoms from the polarisation dependence of two-colour mixing
000499 (2003-12) Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature
000502 (2003-12) Impact-Ionization Autosolitons in Silicon with Deep Impurity Levels
000504 (2003-11-15) Intraband carrier relaxation in quantum dots embedded in doped heterostructures
000506 (2003-11) Semiempirical Calculation of the Fine Structure of the Indium Ion
000509 (2003-11) Molecular-Beam Epitaxy and Properties of Heterostructures with InAs Nanoclusters in an Si Matrix
000523 (2003-09) Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells
000533 (2003-07-25) Heterolaser Frequency Tuning under the Action of Ultrasonic Waves
000534 (2003-07-11) Doping of Magic Nanoclusters in the Submonolayer In/Si(100) System
000536 (2003-07) Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System
000538 (2003-07) On the Superconducting Transition Temperature for Metallic Nanocrystals
000549 (2003-05-15) Effects of bond relaxation on the martensitic transition and optical phonons in spontaneously ordered GaInP2
000552 (2003-05) Photosensitive Structures Based on CdGa2Se4 Single Crystals
000554 (2003-04-21) Nonradiative recombination in quantum dots via Coulomb interaction with carriers in the barrier region
000564 (2003-03) Structure of Energy Quantum Levels in a Quantum Dot Shaped as an Oblate Body of Revolution
000601 (2003) Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface
000606 (2003) Some regularities in eutectoid transformations in binary systems of plutonium
000615 (2003) Preparation of high-purity indium and gallium via electrotransfer in a magnetic field
000710 (2002-11) High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
000713 (2002-10-15) Quantum dot origin of luminescence in InGaN-GaN structures
000720 (2002-09) Optical Storage on the Basis of an n-InSb-SiO2-p-Si Heterostructure
000724 (2002-08-25) Cyclotron Resonance in the InAs/GaSb Heterostructure in an Inclined Magnetic Field
000725 (2002-08-15) Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells
000746 (2002-05) Room Temperature λ = 1.3 μm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate
000748 (2002-05) Multichannel Carrier Scattering at Quantum-Well Heterostructures
000755 (2002-04-15) Ionized donor pairs and microwave and far-infrared absorption in semiconducting CdF2
Wicri

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