| 000005 (2013) |
| Thermodynamics and kinetics of indium segregation in InGaAs/GaAs heterostructures grown by MOCVD |
| 000013 (2013) |
| Readsorption Assisted Growth of InAs/InSb Heterostructured Nanowire Arrays |
| 000061 (2011) |
| Single quantum well deep-green LEDs with buried InGaN/GaN short-period superlattice |
| 000065 (2011) |
| Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system |
| 000108 (2010) |
| Modeling of In segregation, stress and strain in InGaAs/GaAs(100) quantum well heterostructures |
| 000114 (2010) |
| Influence of ex-situ AFM treatment on epitaxial growth of self-organized InAs quantum dots |
| 000226 (2007) |
| Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix |
| 000241 (2007) |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000246 (2007) |
| InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range |
| 000248 (2007) |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000307 (2006) |
| Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy |
| 000002 (2013) |
| Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix |
| 000015 (2013) |
| Pd nanoparticles on SnO2(Sb) whiskers: Aggregation and reactivity in CO detection |
| 000020 (2013) |
| Micro-Raman phonon scattering by InAs/AlAs quantum dot superlattices |
| 000021 (2013) |
| Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer |
| 000071 (2011) |
| New method of creation of a rearrangeable local Coulomb potential profile and its application for investigations of local conductivity of InAs nanowires |
| 000075 (2011) |
| Intraband spectroscopy of excited quantum dot levels by measuring photoinduced currents |
| 000080 (2011) |
| High-quality structures with InAs/Al0.9Ga0.1As QDs produced by droplet epitaxy |
| 000097 (2010) |
| Quantum dots for single and entangled photon emitters |
| 000132 (2009) |
| Thermoelectric Properties of InSb Nanowires Over a Wide Temperature Range |
| 000137 (2009) |
| Spin-dependent electron transport in a type II GaInAsSb/p-InAs heterojunction doped with Mn in quantized magnetic fields |
| 000169 (2009) |
| Comparative Magneto-Photoluminescence Study of Ensembles and of Individual InAs Quantum Dots |
| 000201 (2008) |
| MOVPE growth and characterization of InAlGaN films and InGaN/InAlGaN MQW structures |
| 000224 (2007) |
| The effect of InGaN/GaN MQW hydrogen treatment and threading dislocation optimization on GaN LED efficiency |
| 000233 (2007) |
| Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates |
| 000239 (2007) |
| Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor® |
| 000250 (2007) |
| Growth of InN films and nanorods by H-MOVPE |
| 000251 (2007) |
| Growth and defects of GaAs and InGaAs films on porous GaAs substrates |
| 000264 (2007) |
| Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition |
| 000310 (2006) |
| Misfit dislocations in nanocomposites with quantum dots, nanowires and their ensembles |
| 000017 (2013) |
| Numerical Investigation of Surface Plasmon Resonance in Lens-Shaped Self-Assembled Nanodroplets of Group III Metals |
| 000019 (2013) |
| Microstructure of Interfaces in Heterosystems |
| 000027 (2013) |
| A simple preparation of highly photoactive Fe(III)-doped titania nanocrystals by annealing-free approach |
| 000074 (2011) |
| MOVPE of device-oriented wide-band-gap III-N heterostructures |
| 000094 (2010) |
| Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis |
| 000107 (2010) |
| Modelling of the composition segregation effect during epitaxial growth of InGaAs quantum well heterostructures |
| 000126 (2010) |
| Band structure at heterojunction interfaces of GaInP solar cells |
| 000151 (2009) |
| InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix |
| 000170 (2009) |
| Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures |
| 000176 (2009) |
| Attainability of negative differential conductance in tunnel Schottky structures with 2D channels: theory and experiment |
| 000183 (2008) |
| Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution |
| 000187 (2008) |
| Self-diffusion slowdown in liquid indium and gallium metals under nanoconfinement |
| 000204 (2008) |
| Influence of the GaAs substrate orientation on the composition of GaxIn1-xP (x ≃ 0.5) grown by LPE and MOCVD |
| 000207 (2008) |
| Growth striations and dislocations in highly doped semiconductor single crystals |
| 000212 (2008) |
| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs |
| 000271 (2007) |
| Cathodoluminescence emission study of nanocrystalline indium oxide films deposited by spray pyrolysis |
| 000280 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000313 (2006) |
| Investigation of electronic structure of Si nanocrystals and their interface with host matrix in P-doped SiO2:Si and Al2O3:Si nanocomposites |
| 000318 (2006) |
| Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots |
| 000344 (2005) |
| SXPS investigation of the Cd partial electrolyte treatment of CuInSe2 absorbers |
| 000362 (2005) |
| Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers |
| 000364 (2005) |
| Modified Si(100)4 × 3-In nanocluster arrays |
| 000371 (2005) |
| Hole-hole interaction in a strained InxGa1-xAs two-dimensional system |
| 000372 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000440 (2004) |
| Uniformity of radiation from a laser CRT based on a low-dimensional GaInP/AlGaInP structure with resonance-periodic gain |
| 000449 (2004) |
| Semiconductor Bridgman growth inside inertial flight mode orbiting systems of low orbital eccentricity and long orbital period |
| 000450 (2004) |
| Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure |
| 000454 (2004) |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000509 (2003-11) |
| Molecular-Beam Epitaxy and Properties of Heterostructures with InAs Nanoclusters in an Si Matrix |
| 000534 (2003-07-11) |
| Doping of Magic Nanoclusters in the Submonolayer In/Si(100) System |
| 000538 (2003-07) |
| On the Superconducting Transition Temperature for Metallic Nanocrystals |
| 000634 (2003) |
| Magnetoresistance in long InSb nanowires |
| 000642 (2003) |
| Investigation of the formation of InAs QD's in a AlGaAs matrix |
| 000651 (2003) |
| InGaAsN/GaAs QD and QW structures grown by MOVPE |
| 000694 (2003) |
| Anomalous temperature dependence of the conductivity of nanoporous ITO films |
| 000759 (2002-03-25) |
| Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures |
| 000773 (2002-01) |
| Nanooxidation of n-In0.53Ga0.47As with an Atomic Force Microscope |
| 000783 (2002) |
| The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution |
| 000789 (2002) |
| Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si |
| 000840 (2002) |
| Dislocations and 90°-twins in LEC-grown InP crystals |
| 000917 (2001-03) |
| InGaAs Nanodomains Formed in situ on the Surface of (Al,Ga)As |
| 000945 (2001) |
| Reversibility of the island shape, volume and density in Stranski-Krastanow growth |
| 000964 (2001) |
| Optical and structural properties of self-organized InGaAsN/GaAs nanostructures |
| 000A45 (2000-09-20) |
| Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface |
| 000A59 (2000-07) |
| Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix |
| 000B00 (2000-04) |
| Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots |
| 000B02 (2000-04) |
| Current-Induced Suppression of Superconductivity in a Three-Dimensional Lattice of Weakly Linked Indium Grains in Opal |
| 000B56 (2000) |
| Optimization of nanosecond UV laser illumination for semiconductor materials (Si, HgCdTe, InSb) |
| 000B65 (2000) |
| Luttinger-liquid-like transport in long InSb nanowires |
| 000B79 (2000) |
| InSb-InAs alloys prepared by rapid quenching (106-108 K/s) |
| 000C56 (1999-09) |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C57 (1999-09) |
| Growth of A3N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase |
| 000C65 (1999-08) |
| Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands |
| 000C96 (1999-05) |
| Inhomogeneous strains in semiconducting nanostructures |
| 000D64 (1999) |
| Physicochemical aspects of adhesion of thin MSb (M = In, Ga, Cd) layers |
| 000D74 (1999) |
| Modelling of the current-voltage characteristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnelling |
| 000D85 (1999) |
| InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature |
| 000D87 (1999) |
| III-V compounds for solar cell applications : Thin film solar cells |
| 000D91 (1999) |
| High - brightness LEDs as alternative to lasers and traditional illuminants |
| 000D96 (1999) |
| Electroepitaxy : the control of the kinetics and morphology of InSb |
| 000E08 (1999) |
| Cluster model for melting and crystallization of thin InSb, GaSb, CdSb, and Ge layers |
| 000E09 (1999) |
| Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [010] direction |
| 000E26 (1998-11-10) |
| Dynamic polarization of nuclei in a self-organized ensemble of quantum-size n-InP/InGaP islands |
| 000E66 (1998-06) |
| Self-organizing nanoheterostructures in InGaAsP solid solutions |
| 000F30 (1998) |
| Optical studies of modulation doped InAs/GaAs quantum dots |
| 000F35 (1998) |
| Low temperature transport properties of InAs/GaAs structures with quantum dots |
| 000F37 (1998) |
| Lateral association of vertically-coupled quantum dots |
| 000F50 (1998) |
| Formation of InSb quantum dots in a GaSb matrix |
| 000F51 (1998) |
| Formation of InSb quantum dots in a GaSb matrix using molecular-beam epitaxy |
| 001013 (1997-08) |
| Formation of InGaAs/GaAs nanostructures by submonolayer deposition from molecular beams |
