Le cluster Experimental study - Semiconductor materials
| 000D80 (1999) | Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots | |
| 000F03 (1998-01-19) | Effect of matrix on InAs self-organized quantum dots on InP substrate | |
| 000372 (2005) | High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system | |
| 000431 (2004-01-05) | Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates | |
| 000504 (2003-11-15) | Intraband carrier relaxation in quantum dots embedded in doped heterostructures | |
| 000505 (2003-11-03) | Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys | |
| 000512 (2003-10-15) | Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot | |
| 000520 (2003-09) | Optical and Structural Properties of InGaAsP Miscibility-Gap Solid Solutions Grown by MOVPE on GaAs(001) Substrates | |
| 000550 (2003-05-01) | The red σ2/kT spectral shift in partially disordered semiconductors | |
| 000595 (2003) | The influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaAs quantum dots | |
| 000622 (2003) | Optical spin polarization in negatively charged InAs self-assembled quantum dots under applied electric field | |
| 000640 (2003) | Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells | |
| 000642 (2003) | Investigation of the formation of InAs QD's in a AlGaAs matrix | |
| 000651 (2003) | InGaAsN/GaAs QD and QW structures grown by MOVPE | |
| 000663 (2003) | Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences | |
| 000665 (2003) | Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dots | |
| 000668 (2003) | Formation specifity of InAs/GaAs submonolayer superlattice | |
| 000679 (2003) | Effective tuning of the charge-state of single In(Ga)As/GaAs quantum dots by below barrier band gap excitation | |
| 000681 (2003) | Effect of the low-temperature heating on formation and evolution of defects in PHEMT AlGaAs/InGaAs structures exposed by CF4 plasma | |
| 000700 (2002-12-15) | Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs | |
| 000707 (2002-11-15) | Acceptor-induced threshold energy for the optical charging of InAs single quantum dots | |
| 000726 (2002-08-15) | Interferometric coherence measurement of stress-induced InxGa1-xAs/GaAs quantum dots at the resonant-luminescence phonon sideband | |
| 000747 (2002-05) | Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells | |
| 000749 (2002-05) | Growth of GaInNAs quaternaries using a digital alloy technique | |
| 000766 (2002-02-15) | Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots | |
| 000877 (2001-09-15) | Low temperature photoluminescence of Ga0.84In0.16As0.22Sb0.78 solid solutions lattice matched to InAs | |
| 000921 (2001-02-15) | Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field | |
| 000945 (2001) | Reversibility of the island shape, volume and density in Stranski-Krastanow growth | |
| 000956 (2001) | Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates | |
| 000964 (2001) | Optical and structural properties of self-organized InGaAsN/GaAs nanostructures | |
| 000969 (2001) | Near- and mid-infrared spectroscopy of InGaAs/GaAs quantum dot structures | |
| 000970 (2001) | Morphology and photoelectronic properties of InAs/GaAs surface quantum dots grown by metal-organic vapour-phase epitaxy | |
| 000978 (2001) | MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures | |
| 000983 (2001) | Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties | |
| 000A04 (2001) | Dynamical redistribution of mean electron spin over the energy spectrum of quantum dots | |
| 000A10 (2001) | Coherent control of stress-induced InGaAs quantum dots by means of phonon-assisted resonant photoluminescence | |
| 000A21 (2000-12-15) | Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors | |
| 000A26 (2000-12-01) | Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm | |
| 000A49 (2000-09-15) | Dielectrically enhanced excitons in semiconductor-insulator quantum wires: Theory and experiment | |
| 000B26 (2000-01-03) | Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation | |
| 000B83 (2000) | High quantum efficiency diode photodetector based on ultra-thin InGaAs-on-Si films | |
| 000B91 (2000) | Experimental determination of the energy distribution function of hot holes in an InGaAs/GaAs quantum well heterostructure | |
| 000C11 (2000) | 1.3 μm luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition | |
| 000C15 (1999-12-15) | Optical anisotropy in vertically coupled quantum dots | |
| 000C34 (1999-10-18) | Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm | |
| 000C54 (1999-09) | InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9 μm) | |
| 000C55 (1999-09) | High density 2DEG in III-V semiconductor heterostructures and high-electron-mobility transistors based on them | |
| 000C59 (1999-09) | GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts | |
| 000C68 (1999-08) | Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5 | |
| 000C72 (1999-08) | Band-edge photoluminescence of heavily doped InxGa1-xAs1-yPy (λ=1.2 | |
| 000C73 (1999-07-15) | Excited states and selection rules in self-assembled InAs/GaAs quantum dots | |
| 000C92 (1999-05-10) | InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm | |
| 000C93 (1999-05) | Spontaneously forming periodic composition-modulated InGaAsP structures | |
| 000C97 (1999-05) | InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm | |
| 000C98 (1999-05) | Electron spin beats in InGaAs/GaAs quantum dots | |
| 000C99 (1999-05) | Chemical effects during formation of the electronic surface structure of III-V semiconductors in a sulfide solution. | |
| 000D18 (1999-03) | Photoluminescence and transport properties of multilayer InAs/GaAs structures with quantum dots | |
| 000D23 (1999-02) | Time-resolved photoluminescence and carrier dynamics in vertically-coupled self-assembled quantum dots | |
| 000D25 (1999-02) | Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates | |
| 000D28 (1999-02) | Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix | |
| 000D33 (1999-02) | Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures | |
| 000D42 (1999-01) | Influence of composition and anneal conditions on the optical properties of (In, | |
| 000D67 (1999) | Peculiarities of optical and low-temperature transport properties of multi-layer InAs/GaAs structures with quantum dots | |
| 000D81 (1999) | Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area | |
| 000D94 (1999) | Enhancement of luminescence intensity induced by 1.06 μm excitation in InAs/GaAs quantum dots | |
| 000E01 (1999) | Effect of GaAs(001) surface misorientation on the emission from MBE grown InAs quantum dots | |
| 000E06 (1999) | Control of the emission wavelength of self-organized InGaAs quantum dots : main achievements and present status | |
| 000E18 (1999) | 1.75 μm emission from self-organized InAs quantum dots on GaAs | |
| 000E31 (1998-10) | Polarization of in-plane photoluminescence from InAs | |
| 000E37 (1998-09-15) | Zeeman splitting of excitons and biexcitons in single In0.60Ga0.40As/GaAs self-assembled quantum dots | |
| 000E46 (1998-09) | Formation and passivation of defects in heterostructures with strained GaAs/InGaAs quantum wells as a result of treatment in a hydrogen plasma | |
| 000E48 (1998-08-24) | Electronic structure of self-assembled InAs quantum dots in GaAs matrix | |
| 000E49 (1998-08-15) | Exciton complexes in InxGa1-xAs/GaAs quantum dots | |
| 000E50 (1998-08-15) | Energy levels in self-assembled InAs/GaAs quantum dots above the pressure-induced Γ-X crossover | |
| 000E66 (1998-06) | Self-organizing nanoheterostructures in InGaAsP solid solutions | |
| 000E70 (1998-05-25) | Efficient photoluminescence from triangular quantum wells at the interface of an InP/In0.53Ga0.47As heterostructure | |
| 000E72 (1998-05-15) | Size dependence of exciton-exciton scattering in semiconductor quantum wires | |
| 000E74 (1998-05-15) | Excitons in near-surface quantum wells in magnetic fields: Experiment and theory | |
| 000E78 (1998-05) | Magnetic excitons in near-surface quantum wells: experiment and theory | |
| 000E80 (1998-05) | Effect of substrate misorientation on quantum-dot size distribution in the InAs/GaAs system | |
| 000F09 (1998-01) | Characterization of GaAs/ InxGa1-xAs quantum-dot heterostructures by electrical and optical methods | |
| 000F40 (1998) | Kinetics of dark excitons and excitonic trions in InGaAs single quantum well | |
| 000F52 (1998) | Formation of InAs quantum dots on a silicon (100) surface | |
| 000F90 (1997-10-15) | Energy relaxation by multiphonon processes in InAs/GaAs quantum dots | |
| 000F97 (1997-10) | Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy | |
| 001008 (1997-08-15) | Enhancement of spontaneous emission rates by three-dimensional photon confinement in Bragg microcavities | |
| 001011 (1997-08) | Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy | |
| 001024 (1997-07) | Lateral association of vertically coupled quantum dots | |
| 001027 (1997-07) | A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface | |
| 001034 (1997-05-26) | Properties of strained (In, Ga, Al)As lasers with laterally modulated active region | |
| 001082 (1997) | Sulfur passivation of InGaAs/AlGaAs SQW laser (977 nm) facets in alcohol-based solutions | |
| 001092 (1997) | Resonant photoluminescence from modulation-doped InAs-GaAs quantum dots | |
| 001116 (1997) | Growth and characterization of coherent quantum dots grown by single- and multi-cycle metal-organic chemical vapour deposition | |
| 001250 (1996) | Electron mobility in selectively doped GaAs/InxGa1-xAs multiple quantum well structures | |
| 001354 (1995) | Reactive ion etched quantum wire structures for laser applications | |
| 001371 (1995) | Linear polarization of photoluminescence and Raman scattering in open InGaAs/InP quantum well wires | |
| 001396 (1995) | Bandgap anomaly and appearance of a monolayer superlattice in InGaAs grown by metal organic chemical vapour deposition | |
| 001475 (1994) | Quantitative Auger analysis of A3B5 pseudobinary compounds by means of spectrum synthesis based on a non-linear least-squares fitting technique | |
| 001535 (1993) | Photoluminescence emitted by a quantum well with a hight photocarrier density | |
| 001685 (1992) | Excitonic effects in neutral electron-hole magnetoplasma in quantum wells at low temperatures |
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