Le cluster Inorganic compound - Semiconductor materials
| 000713 (2002-10-15) | Quantum dot origin of luminescence in InGaN-GaN structures | |
| 000756 (2002-04-15) | Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing | |
| 000759 (2002-03-25) | Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures | |
| 000C29 (1999-11-08) | Properties of two-dimensional electron gas containing self-organized quantum antidots | |
| 000C36 (1999-10-15) | Evidence for electron-hole hybridization in cyclotron-resonance spectra of InAs/GaSb heterostructures | |
| 000C54 (1999-09) | InGaAs/InP heterostructures with strained quantum wells and quantum dots (λ=1.5-1.9 μm) | |
| 000C57 (1999-09) | Growth of A3N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase | |
| 000C59 (1999-09) | GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts | |
| 000D20 (1999-03) | Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review | |
| 000D21 (1999-03) | Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure | |
| 000E26 (1998-11-10) | Dynamic polarization of nuclei in a self-organized ensemble of quantum-size n-InP/InGaP islands | |
| 000E45 (1998-09) | Optical orientation of donor-bound excitons in nanosized InP/InGaP islands | |
| 000E93 (1998-03) | Preparation and photosensitivity of heterostructures based on anodized silicon carbide | |
| 000F01 (1998-02) | Depletion of the inverse electron channel at the type-II heterojunction in the system p-GaInAsSb/p-InAs | |
| 000F94 (1997-10) | Electroluminescence of the unconfined heterostructure p-GaInAsSb/p-InAs at liquid-helium temperatures | |
| 001009 (1997-08-01) | Shifts and splitting of energy bands in elastically strained InGaP/GaAs(111)B epitaxial films | |
| 001014 (1997-08) | Electronic transport in a type-II GaInAsSb/p-InAs heterojunction with different doping levels of the solid solution | |
| 001030 (1997-06) | Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures | |
| 001031 (1997-06) | Radiative recombination on the interface in a p-GaInAsSb/p-InAs type-II (broken-gap) heterostructure upon pulsed excitation | |
| 000396 (2004-06-14) | The effect of an additional infrared laser on the carrier collection efficiency of InAs quantum dots | |
| 000408 (2004-05) | Determining Parameters of a Multilayer Heterostructure by Joint Analysis of the X-ray Rocking Curves Measured for Various Crystallographic Planes | |
| 000410 (2004-04) | Tuning the Energy Spectrum of InAs/GaAs Quantum Dots by Varying the Thickness and Composition of the Thin Double GaAs/InGaAs Cladding Layer | |
| 000418 (2004-03) | Investigation of the Possibility of Obtaining Homogeneous Ga1 - xInxSb Crystals under Weak Flow Conditions | |
| 000429 (2004-01-15) | Nitrogen local electronic structure in Ga(In)AsN alloys by soft-x-ray absorption and emission: Implications for optical properties | |
| 000431 (2004-01-05) | Time-resolved photoluminescence measurements of InAs self-assembled quantum dots grown on misorientated substrates | |
| 000497 (2003-12-15) | Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation | |
| 000499 (2003-12) | Room-Temperature 1.5-1.6 μm Photoluminescence from InGaAs/GaAs Heterostructures Grown at Low Substrate Temperature | |
| 000504 (2003-11-15) | Intraband carrier relaxation in quantum dots embedded in doped heterostructures | |
| 000505 (2003-11-03) | Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys | |
| 000511 (2003-10-15) | Magnetic-field-induced recovery of resonant tunneling into a disordered quantum well subband | |
| 000512 (2003-10-15) | Effect of an additional infrared excitation on the luminescence efficiency of a single InAs/GaAs quantum dot | |
| 000513 (2003-10-13) | Electrically tunable mid-infrared electroluminescence from graded cascade structures | |
| 000523 (2003-09) | Electrical Properties and Luminescence Spectra of Light-Emitting Diodes Based on InGaN/GaN Heterostructures with Modulation-Doped Quantum Wells | |
| 000524 (2003-08) | Synchrotron Investigations of an Electron Energy Spectrum in III-V-Based Nanostructures | |
| 000533 (2003-07-25) | Heterolaser Frequency Tuning under the Action of Ultrasonic Waves | |
| 000547 (2003-05-26) | A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy | |
| 000549 (2003-05-15) | Effects of bond relaxation on the martensitic transition and optical phonons in spontaneously ordered GaInP2 | |
| 000550 (2003-05-01) | The red σ2/kT spectral shift in partially disordered semiconductors | |
| 000552 (2003-05) | Photosensitive Structures Based on CdGa2Se4 Single Crystals | |
| 000579 (2003-02) | Coupling of point-defect microcavities in two-dimensional photonic-crystal slabs | |
| 000587 (2003-01-01) | Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy | |
| 000700 (2002-12-15) | Spectroscopic studies of random telegraph noise in InAs quantum dots in GaAs | |
| 000701 (2002-12-15) | Fine structure and spin quantum beats in InP quantum dots in a magnetic field | |
| 000706 (2002-11-15) | Magneto-optical properties of charged excitons in quantum dots | |
| 000707 (2002-11-15) | Acceptor-induced threshold energy for the optical charging of InAs single quantum dots | |
| 000708 (2002-11-11) | Spectrotemporal response of 1.3 μm quantum-dot lasers | |
| 000712 (2002-11) | Correlation spectroscopy of excitons and biexcitons on a single quantum dot | |
| 000724 (2002-08-25) | Cyclotron Resonance in the InAs/GaSb Heterostructure in an Inclined Magnetic Field | |
| 000726 (2002-08-15) | Interferometric coherence measurement of stress-induced InxGa1-xAs/GaAs quantum dots at the resonant-luminescence phonon sideband | |
| 000737 (2002-06-15) | Zero-field spin quantum beats in charged quantum dots | |
| 000738 (2002-06-15) | Quantum corrections to conductivity: From weak to strong localization | |
| 000741 (2002-06) | Low-Temperature Time-Resolved Photoluminescence in InGaN/GaN Quantum Wells | |
| 000743 (2002-05-20) | Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics | |
| 000747 (2002-05) | Photoluminescence in the 1.55 μm Wavelength Range in the InGaAs/GaAs System with Quantum Dots and Wells | |
| 000753 (2002-04-15) | Probing the quantum states of self-assembled InAs dots by magnetotunneling spectroscopy | |
| 000766 (2002-02-15) | Photocurrent and capacitance spectroscopy of Schottky barrier structures incorporating InAs/GaAs quantum dots | |
| 000859 (2001-12-15) | Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells | |
| 000867 (2001-10-15) | Ultrafast carrier dynamics and dephasing in InAs quantum-dot amplifiers emitting near 1.3-μm-wavelength at room temperature | |
| 000878 (2001-09) | Structure of the Interfaces of the InxGa1 - xAs Quantum Well from X-ray Diffraction Data | |
| 000882 (2001-09) | Electron Microscopy of Epitaxial Structures of Pseudobinary AIIIBV Solid Solutions and the Model of Nonequilibrium Ordering in Epitaxial Growth | |
| 000885 (2001-08-15) | Strain engineering of self-organized InAs quantum dots | |
| 000891 (2001-07-16) | High electric field transport in modulation-doped InAs self-assembled quantum dots for high-frequency applications | |
| 000910 (2001-03-19) | Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy | |
| 000921 (2001-02-15) | Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field | |
| 000923 (2001-02) | Optical Study of InP Quantum Dots | |
| 000927 (2001-01) | Influence of Bismuth Doping of InAs Quantum-Dot Layer on the Morphology and Photoelectronic Properties of Gas/InAs Heterostructures Grown by Metal-Organic Chemical Vapor Deposition | |
| 000A21 (2000-12-15) | Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors | |
| 000A23 (2000-12-15) | Photocurrent spectroscopy of InAs/GaAs self-assembled quantum dots | |
| 000A24 (2000-12-15) | Low-field negative magnetoresistance in double-layer structures | |
| 000A26 (2000-12-01) | Volmer-Weber and Stranski-Krastanov InAs-(Al,Ga)As quantum dots emitting at 1.3 μm | |
| 000A36 (2000-11) | The Emission from the Structures with Arrays of Coupled Quantum Dots Grown by the Submonolayer Epitaxy in the Spectral Range of 1.3-1.4 μm | |
| 000A67 (2000-06-26) | Stark shift in electroluminescence of individual InAs quantum dots | |
| 000A69 (2000-06-15) | Optical transitions in broken gap heterostructures | |
| 000A70 (2000-06-15) | Carrier relaxation dynamics in InP quantum dots studied by artificial control of nonradiative losses | |
| 000A74 (2000-06) | Specifics of MOCVD Formation of InxGa1 - xN Inclusions in a GaN Matrix | |
| 000A82 (2000-05-08) | Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate | |
| 000A84 (2000-05) | Stacked InAs/InGaAs Quantum Dot Heterostructures for Optical Sources Emitting in the 1.3 μm Wavelength Range | |
| 000B00 (2000-04) | Lasing in the Vertical Direction in InGaN/GaN/AlGaN Structures with InGaN Quantum Dots | |
| 000B05 (2000-03-20) | Hole and electron emission from InAs quantum dots | |
| 000B26 (2000-01-03) | Time-resolved photoluminescence in self-assembled InAs/GaAs quantum dots under strictly resonant excitation | |
| 000C14 (1999-12-27) | Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves | |
| 000C15 (1999-12-15) | Optical anisotropy in vertically coupled quantum dots | |
| 000C16 (1999-12-13) | Recombination balance in green-light-emitting GaN/InGaN/AlGaN quantum wells | |
| 000C17 (1999-12-06) | Polaron Effects in Quantum Dots | |
| 000C20 (1999-12-01) | Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures | |
| 000C24 (1999-12) | Interaction between the exciton and nuclear spin systems in a self-organized ensemble of InP/InGaP size-quantized islands | |
| 000C27 (1999-11-15) | Anti-Stokes photoluminescence of InP self-assembled quantum dots in the presence of electric current | |
| 000C30 (1999-11) | X-Ray diffraction analysis of multilayer InAs-GaAs heterostructures with InAs quantum dots | |
| 000C31 (1999-11) | Radiation defects in semiconductors under hydrostatic pressure | |
| 000C34 (1999-10-18) | Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm | |
| 000C35 (1999-10-15) | Raman study of the topology of InAs/GaAs self-assembled quantum dots | |
| 000C41 (1999-10) | InAsSb/InAsSbP heterostructure lasers with a large range of current tuning of the lasing frequency | |
| 000C42 (1999-10) | Fabrication and photosensitivity of AgInSe2/III-VI isotypic heterojunctions | |
| 000C44 (1999-10) | Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method | |
| 000C45 (1999-09-27) | Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates | |
| 000C50 (1999-09) | Spontaneously assembling periodic composition-modulated InGaAsP structures | |
| 000C52 (1999-09) | Photoluminescence of InAs quantum dots grown on disoriented GaAs substrates | |
| 000C56 (1999-09) | Heteroepitaxial growth of InAs on Si: a new type of quantum dot | |
| 000C58 (1999-09) | Gain characteristics of quantum-dot injection lasers | |
| 000C61 (1999-08-30) | Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser |
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