| 000A93 (2000-04-01) |
| Composition and Surface Structure of Quantum Chains on a In/Si(111) Surface |
| 000B49 (2000) |
| Quantitative STM investigation of the phase formation in submonolayer In/Si(111) system |
| 000F17 (1998) |
| The role of Si atoms in In/Si(111) surface phase formation |
| 000F73 (1998) |
| Atomic-hydrogen-induced self-organization processes of the In/Si(111) surface phases studied by scanning tunneling microscopy |
| 001091 (1997) |
| STM observation of the atomic hydrogen adsorption on the Si(111)4 X 1-In surface |
| 000076 (2011) |
| Interplay between adsorbed C60 fullerenes and point defects on a Si(111)3 x 3-In reconstructed surface |
| 000463 (2004) |
| Modification of Sb/Si(001) interface by incorporation of In(4 x 3) surface reconstruction |
| 000534 (2003-07-11) |
| Doping of Magic Nanoclusters in the Submonolayer In/Si(100) System |
| 000C01 (2000) |
| Composition and atomic structure of the Si(111)√31 × √31-In surface |
| 000C06 (2000) |
| Atomic-hydrogen-induced self-organization of Si(111) √3 × √3-In surface phase studied by CAICISS and STM |
| 000C28 (1999-11-15) |
| Analysis of surface structures through determination of their composition using STM: Si(100)4×3-In and Si(111)4×1-In reconstructions |
| 000D00 (1999-05) |
| Adsorption of atomic hydrogen on the Si(001) 4×3-In surface studied by coaxial impact collision ion scattering spectroscopy and scanning tunneling microscopy |
| 000E69 (1998-06) |
| Atomic hydrogen interaction with the Si(100)4×3-In surface studied by scanning tunneling microscopy |
| 000E71 (1998-05-15) |
| Structural model for the Si(100)4×3-In surface phase |
| 000F33 (1998) |
| New structural model for the Si(111)4 x 1-In reconstruction |
| 001053 (1997-02-15) |
| Indium-induced Si(111)4×1 silicon substrate atom reconstruction |
| 001084 (1997) |
| Structural transformations at room temperature adsorption of In on Si(111)√3 x √3-In surface : LEED-AES-STM study |
| 001088 (1997) |
| Si(111)2 x 2-In ↔ Si(111)√3 x √3-In scanning tunneling microscope tip-induced structural transformation |
| 001135 (1997) |
| 4 x 1-Si substrate atoms reconstruction in the Si(111)4 x 1-In structure |
| 000031 (2012) |
| Structure of ordered oxide on InAs(100) surface |
| 000033 (2012) |
| Self-assembly of C60 fullerenes on quasi-one-dimensional Si(111)4×1-In surface |
| 000038 (2012) |
| Ordered Mn-diluted Au/Si(111) reconstructions |
| 000044 (2012) |
| First-principles study of Si(111)√31 x √31-In reconstruction |
| 000051 (2012) |
| Characterization of Si(111)√3 x √3-(Au,In) surface by optical second-harmonic generation |
| 000055 (2011) |
| Tin-stabilized (1 x2) and (1 x4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations |
| 000059 (2011) |
| Structural transformations in (Au,In)/Si(111) system and their effect on surface conductivity |
| 000085 (2011) |
| C60 adsorption onto the one-atomic-layer In films on Si(111) surface |
| 000101 (2010) |
| Peculiarities of Al magic cluster self-assembly on Si( 10 0) surface |
| 000121 (2010) |
| Cooperative phenomena in self-assembled nucleation of 3 x 4-In/Si(100) surface magic clusters |
| 000167 (2009) |
| Core-level shifts of InP(10 0)(2 x 4) surface: Theory and experiment |
| 000364 (2005) |
| Modified Si(100)4 × 3-In nanocluster arrays |
| 000601 (2003) |
| Study of Sb adsorption on the Si(0 0 1)-In(4 x 3) surface |
| 000958 (2001) |
| Phase transition and stability of Si(111)-8 × '2'-In surface phase at low temperatures |
| 000A40 (2000-11) |
| Atomic Structures of Two-Dimensional Strained InAs Epitaxial Layers on a GaAs(001) Surface: in situ Observation of Quantum Dot Growth |
| 000D44 (1999) |
| Ultrahigh vacuum scanning tunnelling microscopy studies of the decapped InAs quantum dots on GaAs(001) surface after desorption of a protective As layer |
| 000F02 (1998-01-25) |
| Scanning tunneling spectroscopy of charge effects on semiconductor surfaces and atomic clusters |
| 000F99 (1997-09-15) |
| STM tip-induced diffusion of In atoms on the Si(111)×-In surface |
| 001015 (1997-07-15) |
| Structural model for the Si(111)-4×1-In reconstruction |
| 001089 (1997) |
| Si(100)4 x 3-in surface phase : identification of silicon substrate atom reconstruction |
| 001130 (1997) |
| Coadsorption of Ag and In atoms on Si(111) surface |
| 001320 (1995-04-15) |
| Tuning and breakdown of faceting under externally applied stress |
| 001573 (1993) |
| Electrophysical properties of surface phases of In on Si(111) |
| 001948 (1989) |
| The role of surface phases in processes on silicon surfaces |
| 000001 (2014) |
| Tailoring the Indium island sizes on the Silicon surface by controlling the deposition rate. Interplay between the size selectivity due to the quantum confinement effect and kinetic factors |
| 000016 (2013) |
| Passivation of boron-doped p+-Si emitters in the (p+ nn+)Si solar cell structure with AlOx grown by ultrasonic spray pyrolysis |
| 000019 (2013) |
| Microstructure of Interfaces in Heterosystems |
| 000042 (2012) |
| Indolinone-substituted methanofullerene-A new acceptor for organic solar cells |
| 000092 (2010) |
| Thin film removal mechanisms in ns-laser processing of photovoltaic materials |
| 000113 (2010) |
| Interaction of collinear and noncollinear phonons in anharmonic scattering processes and their role in ultrasound absorption of fast quasi-transverse modes in cubic crystals |
| 000117 (2010) |
| Fluorine doped indium oxide films for silicon solar cells |
| 000122 (2010) |
| Composition, morphology and surface recombination rate of HCl-isopropanol treated and vacuum annealed InAs(1 1 1)A surfaces |
| 000168 (2009) |
| Conductors and Semiconductors for Advanced Organic Electronics |
| 000196 (2008) |
| New method for interface characterization in heterojunction solar cells based on diffusion capacitance measurements |
| 000197 (2008) |
| Molecular Doping of Graphene |
| 000207 (2008) |
| Growth striations and dislocations in highly doped semiconductor single crystals |
| 000236 (2007) |
| Orange to black electrochromic behaviour in poly (2 -(2 -thienyl ) -1h -pyrrole) thin films |
| 000247 (2007) |
| ITO deposited by pyrosol for photovoltaic applications |
| 000257 (2007) |
| Electrochemical properties of carbon nanotubes-hydrogenase conjugates Langmuir-Blodgett films |
| 000307 (2006) |
| Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy |
| 000327 (2006) |
| Chemically prepared well-ordered InP(001) surfaces |
| 000331 (2006) |
| 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance |
| 000394 (2005) |
| 384x288 MCT LWIR FPA |
| 000413 (2004-04) |
| Investigation of Characteristics of InSb-Based Photodiode Linear Arrays |
| 000421 (2004-03) |
| Dependence of Structural and Optical Properties of QD Arrays in an InAs/GaAs System on Surface Temperature and Growth Rate |
| 000437 (2004) |
| Well-ordered (1 0 0) InAs surfaces using wet chemical treatments |
| 000445 (2004) |
| Surfactant mediated growth of Sb clusters on Si(111) surface |
| 000446 (2004) |
| Structural diagnostics of 'quantum' layers by X-ray diffraction and standing waves |
| 000475 (2004) |
| Growth and optical properties of InAs/GaAs quantum dot structures |
| 000502 (2003-12) |
| Impact-Ionization Autosolitons in Silicon with Deep Impurity Levels |
| 000509 (2003-11) |
| Molecular-Beam Epitaxy and Properties of Heterostructures with InAs Nanoclusters in an Si Matrix |
| 000540 (2003-06-16) |
| Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments |
| 000568 (2003-02-25) |
| Many-Particle Interaction in Tunneling Spectroscopy of Impurity States on the InAs(110) Surface |
| 000673 (2003) |
| Evolution of CuInSe2 (1 1 2) surface due to annealing: XPS study |
| 000720 (2002-09) |
| Optical Storage on the Basis of an n-InSb-SiO2-p-Si Heterostructure |
| 000746 (2002-05) |
| Room Temperature λ = 1.3 μm Photoluminescence from InGaAs Quantum Dots on (001) Si Substrate |
| 000767 (2002-02-15) |
| Modeling cross-hatch surface morphology in growing mismatched layers |
| 000789 (2002) |
| Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si |
| 000795 (2002) |
| Photoluminescence of isolated quantum dots in metastable InAs arrays |
| 000805 (2002) |
| Observations of self-organized InAs nanoislands on GaAs (0 0 1) surface by electrostatic force microscopy |
| 000871 (2001-10) |
| Photocapacitance Effect at Low Temperatures in a Unipolar MIS Capacitor with a Semiconductor Electrode Doped with Two Different Acceptor Impurities |
| 000893 (2001-07) |
| The Formation of Developed Morphology on the Indium Phosphide Surface by Ion Argon Beam Sputtering |
| 000911 (2001-03-15) |
| Effect of surface reconstruction on the low-temperature oxidation of InAs(100): Optical investigations |
| 000939 (2001) |
| Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces |
| 000945 (2001) |
| Reversibility of the island shape, volume and density in Stranski-Krastanow growth |
| 000983 (2001) |
| Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties |
| 000999 (2001) |
| Electron accumulation layer on clean In-terminated InAs(001)(4 x 2)-c(8 x 2) surface |
| 000A44 (2000-09-20) |
| Photovoltaic Effect in a-Si:H/n-InSe Heterostructures |
| 000A45 (2000-09-20) |
| Nanostructured InSiAs Solid Solution Grown by Molecular Beam Epitaxy on the Si(001) Surface |
| 000A59 (2000-07) |
| Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix |
| 000A75 (2000-06) |
| Photosensitivity of a-Si:H/n-InSe Heterocontacts |
| 000A76 (2000-06) |
| Photoelectric Phenomena in a-Si:H/p-CuInSe2 Heterostructures |
| 000A82 (2000-05-08) |
| Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate |
| 000A87 (2000-05) |
| Photocapacitance Effect in a Monopolar Metal-Insulator-Semiconductor Capacitor at Low Temperatures |
| 000A91 (2000-05) |
| A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns |
| 000B19 (2000-02) |
| Reconstruction Transition (4 × 2) (2 × 4) on the (001) Surfaces of InAs and GaAs |
| 000B22 (2000-02) |
| Forbidden Optical Transitions Between Impurity Levels in Silicon and Gallium Phosphide |
| 000B27 (2000-01) |
| The Use of a Scanning Tunneling Microscope (STM) for Investigation of Local Photoconductivity of Quantum-Dimensional Semiconductor Structures |
| 000B56 (2000) |
| Optimization of nanosecond UV laser illumination for semiconductor materials (Si, HgCdTe, InSb) |
| 000C40 (1999-10) |
| Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures |
| 000C50 (1999-09) |
| Spontaneously assembling periodic composition-modulated InGaAsP structures |
