| 000939 (2001) |
| Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfaces |
| 000D68 (1999) |
| Ordered arrays of arsenic clusters coincided with InAs/GaAs superlattices grown by low-temperature MBE |
| 000977 (2001) |
| MBE growth of (In)GaAsN on GaAs using a constricted DC plasma source |
| 000F50 (1998) |
| Formation of InSb quantum dots in a GaSb matrix |
| 000233 (2007) |
| Plasma-assisted MBE of InGaN epilayers with atomically smooth and nanocolumnar morphology, grown on MOVPE GaN/Al2O3 templates |
| 000246 (2007) |
| InGaN-based epilayers and quantum wells with intense room-temperature photoluminescence in the 500-650 nm range |
| 000251 (2007) |
| Growth and defects of GaAs and InGaAs films on porous GaAs substrates |
| 000280 (2006) |
| Surface-plasmon resonances in indium nitride with metal-enriched nano-particles |
| 000307 (2006) |
| Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy |
| 000397 (2004-06-07) |
| Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy |
| 000454 (2004) |
| Plasma-assisted MBE growth and characterization of InN on sapphire |
| 000496 (2003-12-29) |
| Photoluminescence, depth profile, and lattice instability of hexagonal InN films |
| 000498 (2003-12-08) |
| Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy |
| 000637 (2003) |
| MBE growth and photoluminescence properties of strained InAsSb/AlSbAs quantum wells |
| 000650 (2003) |
| InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source |
| 000743 (2002-05-20) |
| Molecular-beam epitaxy of (Cd,Mn)Se on InAs, a promising material system for spintronics |
| 000823 (2002) |
| InN growth by plasma-assisted molecular beam epitaxy |
| 000937 (2001) |
| Surface segregation in group-III nitride MBE |
| 000963 (2001) |
| Optical control of group-III and N flux intensities in plasma-assisted MBE with RF capacitively-coupled magnetron nitrogen activator |
| 000978 (2001) |
| MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures |
| 000983 (2001) |
| Incorporation of InAs nanostructures in a silicon matrix : growth, structure and optical properties |
| 000984 (2001) |
| InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates |
| 000B12 (2000-03) |
| Mechanisms of InGaAlAs Solid Solution Decomposition Stimulated by InAs Quantum Dots |
| 000B78 (2000) |
| Indium segregation kinetics in InGaAs ternary compounds |
| 000C62 (1999-08) |
| Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy |
| 000C69 (1999-08) |
| Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface |
| 000D12 (1999-03-15) |
| Enhanced precipitation of excess As on antimony delta layers in low-temperature-grown GaAs |
| 000D63 (1999) |
| Plasma-assisted MBE growth of GaN and InGaN on different substrates |
| 000D84 (1999) |
| Indium droplet formation during molecular beam epitaxy of InGaN |
| 000E61 (1998-07) |
| Effect of isovalent indium doping on excess arsenic in gallium arsenide grown by molecular-beam epitaxy at low temperatures |
| 000E75 (1998-05) |
| Structural characterization of self-organized nanostructures |
| 000F76 (1998) |
| A thermodynamic analysis of the growth of III-V compounds with two volatile group V elements by molecular-beam epitaxy |
| 000F92 (1997-10) |
| Thermodynamic analysis of the molecular-beam epitaxial growth of quaternary III-V compounds: GaxIn1-xPyAs1-y |
| 000F96 (1997-10) |
| Characteristics of the formation of (Al, Ga)Sb/InAs heterointerfaces in molecular-beam epitaxy |
| 000F97 (1997-10) |
| Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy |
| 001029 (1997-06-09) |
| Enhanced arsenic excess in low-temperature grown GaAs due to indium doping |
| 001034 (1997-05-26) |
| Properties of strained (In, Ga, Al)As lasers with laterally modulated active region |
| 000094 (2010) |
| Study of Semiconductor Multilayer Structures by Cathodoluminescence and Electron Probe Microanalysis |
| 000180 (2009) |
| A valved cracking phosphorus beam source using InP thermal decomposition and its application to MBE growth |
| 000226 (2007) |
| Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix |
| 000241 (2007) |
| MBE-grown metamorphic lasers for applications at telecom wavelengths |
| 000362 (2005) |
| Molecular beam epitaxy of type II InSb/InAs nanostructures with InSb sub-monolayers |
| 000363 (2005) |
| Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary |
| 000365 (2005) |
| MnGeP2 thin films grown by molecular beam epitaxy |
| 000372 (2005) |
| High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system |
| 000411 (2004-04) |
| The Effect of Exposure to Arsenic Flow on the Optical Properties of Quantum Dot Arrays in the InAs/GaAs(100) System |
| 000474 (2004) |
| High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy |
| 000475 (2004) |
| Growth and optical properties of InAs/GaAs quantum dot structures |
| 000485 (2004) |
| Effect of growth kinetics on the structural and optical properties of quantum dot ensembles |
| 000491 (2004) |
| Correlations between electrical and optical properties for OMVPE InN |
| 000547 (2003-05-26) |
| A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy |
| 000653 (2003) |
| InAs/InGaAsN quantum dots emitting at 1.55 μm grown by molecular beam epitaxy |
| 000687 (2003) |
| Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique |
| 000688 (2003) |
| Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures |
| 000767 (2002-02-15) |
| Modeling cross-hatch surface morphology in growing mismatched layers |
| 000785 (2002) |
| Synthesis and optical absorption of solid solutions between InSb and II-VI compounds |
| 000789 (2002) |
| Stoichiometry and absolute atomic concentration profiles obtained by combined Rutherford backscattering spectroscopy and secondary-ion mass spectroscopy: InAs nanocrystals in Si |
| 000809 (2002) |
| Mosaicity and electrical and optical properties of group III nitrides |
| 000812 (2002) |
| Metalorganic chemical vapor deposition of oxide films on semiconductor substrates using aluminum, gallium, and indium alkyl chloride precursors |
| 000817 (2002) |
| Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD |
| 000837 (2002) |
| Effect of oxidizers on the growth of indium oxide films from indium acetylacetonate vapor |
| 000854 (2002) |
| AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers |
| 000890 (2001-08) |
| Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy |
| 000910 (2001-03-19) |
| Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy |
| 000945 (2001) |
| Reversibility of the island shape, volume and density in Stranski-Krastanow growth |
| 000964 (2001) |
| Optical and structural properties of self-organized InGaAsN/GaAs nanostructures |
| 000982 (2001) |
| Influence of barrier layers on indium segregation in pseudomorphic InGaAs/(Al)GaAs quantum wells grown by MOCVD |
| 000A02 (2001) |
| Effect of low-temperature diffusion annealing on the properties of PbSnTe(In) epilayers |
| 000A15 (2001) |
| A new method for growing thin layers of solid solutions between IV-VI compounds |
| 000A59 (2000-07) |
| Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix |
| 000A82 (2000-05-08) |
| Structure and optical properties of Si/InAs/Si layers grown by molecular beam epitaxy on Si substrate |
| 000A91 (2000-05) |
| A Computerized Complex for Recording and Processing of Reflected High-Energy Electron Diffraction Patterns |
| 000B84 (2000) |
| Hexagonal InN/sapphire heterostructures: interplay of interface and layer properties |
| 000C15 (1999-12-15) |
| Optical anisotropy in vertically coupled quantum dots |
| 000C40 (1999-10) |
| Influence of indium doping on the formation of silicon-(gallium vacancy) complexes in gallium arsenide grown by molecular-beam epitaxy at low temperatures |
| 000C56 (1999-09) |
| Heteroepitaxial growth of InAs on Si: a new type of quantum dot |
| 000C57 (1999-09) |
| Growth of A3N whiskers and plate-shaped crystals by molecular-beam epitaxy with the participation of the liquid phase |
| 000C59 (1999-09) |
| GaInAsSb/GaSb heterostructures grown in the spinodal decay region by liquid-phase epitaxy from Sb-enriched solution-melts |
| 000C68 (1999-08) |
| Gadolinium-doped InGaAsSb solid solutions on an InAs substrate for light-emitting diodes operating in the spectral interval λ=3-5μm |
| 000C84 (1999-06-15) |
| Purification of epitaxial InAs grown by liquid phase epitaxy using gadolinium gettering |
| 000C93 (1999-05) |
| Spontaneously forming periodic composition-modulated InGaAsP structures |
| 000C95 (1999-05) |
| Optoelectronic effects in semi-insulating CdTe single crystals and structures based on them |
| 000C97 (1999-05) |
| InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 μm |
| 000D11 (1999-03-22) |
| Optical properties of InAs quantum dots in a Si matrix |
| 000D28 (1999-02) |
| Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix |
| 000D55 (1999) |
| Self-organized InAs quantum dots in a silicon matrix |
| 000D80 (1999) |
| Lasing in structures with InAs quantum dots in an (Al, Ga)As matrix grown by submonolayer deposition : Special issue papers on quantum dots |
| 000E09 (1999) |
| Characteristics of the InAs quantum dots MBE grown on the vicinal GaAs(0 0 1) surfaces misoriented to the [010] direction |
| 000E23 (1998-12) |
| Continuous stimulated emission at T=293 K from separate-confinement heterostructure diode lasers with one layer of InAs quantum dots grown on vicinal GaAs(001) surfaces misoriented in the [010] direction in the active region |
| 000E36 (1998-10) |
| Arsenic cluster superlattice in gallium arsenide grown by low-temperature molecular-beam epitaxy |
| 000E43 (1998-09) |
| Photoluminescence of two-dimensional electron gas in metamorphic n-InAlAs/InGaAs/InAlAs heterostructures on GaAs(100) substrates |
| 000E57 (1998-07) |
| Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 μm |
| 000E58 (1998-07) |
| Indium layers in low-temperature gallium arsenide: structure and how it changes under annealing in the temperature range 500-700 °C |
| 000E60 (1998-07) |
| Growth of InAs quantum dots on vicinal GaAs(001) surfaces misoriented in the [010] direction |
| 000F03 (1998-01-19) |
| Effect of matrix on InAs self-organized quantum dots on InP substrate |
| 000F06 (1998-01) |
| High-resolution x-ray diffraction study of InAs-GaAs superlattices grown by molecular-beam epitaxy at low temperature |
| 000F07 (1998-01) |
| Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates |
| 000F52 (1998) |
| Formation of InAs quantum dots on a silicon (100) surface |
| 000F93 (1997-10) |
| Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures |
| 000F98 (1997-10) |
| A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system |
