| 001000 (1997-09-01) |
| Self-consistent modeling of the current-voltage characteristics of resonant tunneling structures with type II heterojunctions |
| 000926 (2001-01-15) |
| Excitonic contributions to the quantum-confined Pockels effect |
| 000C46 (1999-09-15) |
| The rate of radiative recombination in the nitride semiconductors and alloys |
| 000E74 (1998-05-15) |
| Excitons in near-surface quantum wells in magnetic fields: Experiment and theory |
| 000402 (2004-06) |
| Electron-Electron Scattering in Stepped Quantum Wells |
| 000405 (2004-05) |
| Luminescence of Stepped Quantum Wells in GaAs/GaAlAs and InGaAs/GaAs/GaAlAs Structures |
| 000542 (2003-06-15) |
| Kinetics of highly spin-polarized electron photoemission from an InGaAlAs strained layer by energy and spin-resolved measurements |
| 000573 (2003-02) |
| Population Inversion between Γ Subbands in Quantum Wells under the Conditions of Γ-L Intervalley Transfer |
| 000725 (2002-08-15) |
| Strain-induced semimetal-semiconductor transition in InAs/GaSb broken-gap quantum wells |
| 000B13 (2000-03) |
| Investigation of Barrier Tunneling Characteristics of Symmetrical Double Quantum Well in In0.25Ga0.75As / GaAs / In0.25Ga0.75As Heterostructure |
| 000C44 (1999-10) |
| Determination of the density of states in quantum wells and quantum dot arrays by the capacitance-voltage method |
| 000C71 (1999-08) |
| Cavity-polariton dispersion and polarization splitting in single and coupled semiconductor microcavities |
| 000C91 (1999-05-15) |
| Magnetic-field-dependent zero-bias diffusive anomaly in Pb oxide-n-InAs structures: Coexistence of two- and three-dimensional states |
| 000D09 (1999-04) |
| Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host |
| 000D34 (1999-01-11) |
| Intrinsic optical confinement and lasing in InAs-AlGaAs submonolayer superlattices |
| 000D41 (1999-01) |
| Magnetopolaron states involving confined phonons in a semiconductor quantum well |
| 000E39 (1998-09) |
| Transport properties and photoluminescence of two-dimensional electron gas in pseudomorphic n-AlGaAs/InGaAs/GaAs quantum wells |
| 000E41 (1998-09) |
| Powerful far-infrared radiation of hot holes in a strained two-dimensional InGaAs/AlGaAs structure |
| 000E67 (1998-06) |
| Electron states in quantum-dot and antidot arrays placed in a strong magnetic field |
| 000E77 (1998-05) |
| Optical orientation and alignment of excitons in quantum dots |
| 000E78 (1998-05) |
| Magnetic excitons in near-surface quantum wells: experiment and theory |
| 000E87 (1998-04) |
| Intraband transitions in magnetoexcitons in coupled double quantum wells |
| 000F84 (1997-11) |
| Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells |
| 000F93 (1997-10) |
| Influence of the quality of the heterointerface on the cyclotron resonance spectra of InAs/(AlGa)Sb heterostructures |
| 001004 (1997-09) |
| The effect of a Coulomb well on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures |
| 001007 (1997-09) |
| Luminescence spectra of blue and green light-emitting diodes based on multilayer InGaN/AlGaN/GaN heterostructures with quantum wells |
| 001008 (1997-08-15) |
| Enhancement of spontaneous emission rates by three-dimensional photon confinement in Bragg microcavities |
| 001035 (1997-05-25) |
| Fine structure of excitonic levels in quantum dots |
| 001037 (1997-05) |
| The properties of low-threshold heterolasers with clusters of quantum dots |
| 001054 (1997-02-03) |
| Theoretical study of thresholdless Auger recombination in compressively strained InAlAsSb/GaSb quantum wells |
| 001059 (1997-01) |
| Waveguide properties of gallium, aluminum, and indium nitride heterostructures |
| 001174 (1996-06-15) |
| Intrawell and interwell magnetoexcitons in InxGa1-xAs/GaAs coupled double quantum wells |
| 000054 (2011) |
| Tunnel injection emitter structures with barriers comprising nanobridges |
| 000352 (2005) |
| Phonon-induced exciton dephasing in quantum dot molecules |
| 000395 (2004-06-25) |
| Experimental Separation of Rashba and Dresselhaus Spin Splittings in Semiconductor Quantum Wells |
| 000397 (2004-06-07) |
| Asymmetric AlAsSb/InAs/CdMgSe quantum wells grown by molecular-beam epitaxy |
| 000412 (2004-04) |
| Studies of Physical Phenomena in Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: Photoluminescence of Tunneling-Coupled Quantum Wells |
| 000416 (2004-03-15) |
| Landau level structures and semimetal-semiconductor transition in strained InAs/GaSb quantum wells |
| 000419 (2004-03) |
| Internal Optical Loss in Semiconductor Lasers |
| 000494 (2004) |
| A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields |
| 000497 (2003-12-15) |
| Ultrafast polarization dynamics in biased quantum wells under strong femtosecond optical excitation |
| 000505 (2003-11-03) |
| Inherent nature of localized states in highly planar monolayer InAs/GaAsN pseudo-alloys |
| 000513 (2003-10-13) |
| Electrically tunable mid-infrared electroluminescence from graded cascade structures |
| 000517 (2003-10) |
| Electron Transport in Unipolar Heterostructure Transistors with Quantum Dots in Strong Electric Fields |
| 000548 (2003-05-15) |
| Electron-electron interaction with decreasing conductance |
| 000555 (2003-04-10) |
| Millisecond Photoluminescence Kinetics in a System of Direct-Bandgap InAs Quantum Dots in an AlAs Matrix |
| 000565 (2003-03) |
| Investigation of the Physical Properties of Semiconductor Nanostructures Using Samples with Laterally Nonuniform Layers: 1. Photoluminescence |
| 000587 (2003-01-01) |
| Voltage distributions and nonoptical catastrophic mirror degradation in high power InGaAs/AlGaAs/GaAs lasers studied by Kelvin probe force microscopy |
| 000704 (2002-12) |
| MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells |
| 000710 (2002-11) |
| High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures |
| 000737 (2002-06-15) |
| Zero-field spin quantum beats in charged quantum dots |
| 000748 (2002-05) |
| Multichannel Carrier Scattering at Quantum-Well Heterostructures |
| 000756 (2002-04-15) |
| Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing |
| 000774 (2002-01) |
| Light Emission by Semiconductor Structure with Quantum Well and Array of Quantum Dots |
| 000776 (2002-01) |
| Evaluation of Physical Parameters for the Group III Nitrates: BN, AlN, GaN, and InN |
| 000859 (2001-12-15) |
| Hybridization of electron, light-hole, and heavy-hole states in InAs/GaSb quantum wells |
| 000874 (2001-10) |
| Difference Mode Generation in Injection Lasers |
| 000881 (2001-09) |
| Electronic Properties of InAs-Based Metal-Insulator-Semiconductor (MIS) Structures |
| 000885 (2001-08-15) |
| Strain engineering of self-organized InAs quantum dots |
| 000910 (2001-03-19) |
| Room-temperature midinfrared electroluminescence from asymmetric AlSbAs/InAs/CdMgSe heterostructures grown by molecular beam epitaxy |
| 000920 (2001-03) |
| An Active Lasing Region with a Quantum Well and a Quantum Dot Array |
| 000966 (2001) |
| Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface |
| 000993 (2001) |
| Fine structure of excitons in high quality thin quantum wells |
| 000A21 (2000-12-15) |
| Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors |
| 000A39 (2000-11) |
| Electronic Band Structure of In2S3 and CdIn2S4 Semiconductor Spinels from the Data of X-ray Spectroscopy and Theoretical Calculations |
| 000A49 (2000-09-15) |
| Dielectrically enhanced excitons in semiconductor-insulator quantum wires: Theory and experiment |
| 000A56 (2000-07-15) |
| Decrease of channel conductivity with increasing sheet electron concentration in modulation-doped heterostructures |
| 000A65 (2000-07) |
| Lattice Dynamics of MF3 Crystals (M = Al, Ga, and In) |
| 000A69 (2000-06-15) |
| Optical transitions in broken gap heterostructures |
| 000A77 (2000-06) |
| Low-Temperature Photoluminescence and X-ray Diffractometry Study of InxGa1 - xAs Quantum Wells |
| 000A96 (2000-04) |
| Recombination Emission from InAs Quantum Dots Grown on Vicinal GaAs Surfaces |
| 000B03 (2000-04) |
| A Numerical Calculation of Auger Recombination Coefficients for InGaAsP/InP Quantum Well Heterostructures |
| 000B04 (2000-03-25) |
| Exciton Luminescence of Quasi-Two-Dimensional Solid Solutions |
| 000B07 (2000-03) |
| Treatment of Inhomogeneous Radiation Broadening in Quantum Dot Heterostructures Described within the Framework of the Superradiation Model |
| 000B11 (2000-03) |
| Optical Properties of Excitons in Semiconductor (InP)-Insulator Quantum Wires |
| 000B16 (2000-02) |
| Ultraquasi-Hydrodynamic Electron Transport in Submicrometer Field Effect MIS Transistors and Heterotransistors |
| 000B67 (2000) |
| Light and heavy hole excitons in absorption and magnetoabsorption spectra of InGaAs/GaAs MQWs |
| 000B72 (2000) |
| Interband resonant tunnelling in quantizing magnetic field |
| 000B92 (2000) |
| Electronic structure and bonding configuration of the h-phases Ti2MC and Ti2MN (M = Al, Ga, In) |
| 000C22 (1999-12) |
| Superradiance in semiconductors |
| 000C24 (1999-12) |
| Interaction between the exciton and nuclear spin systems in a self-organized ensemble of InP/InGaP size-quantized islands |
| 000C36 (1999-10-15) |
| Evidence for electron-hole hybridization in cyclotron-resonance spectra of InAs/GaSb heterostructures |
| 000C55 (1999-09) |
| High density 2DEG in III-V semiconductor heterostructures and high-electron-mobility transistors based on them |
| 000C58 (1999-09) |
| Gain characteristics of quantum-dot injection lasers |
| 000C88 (1999-06) |
| Gain and internal losses in InGaAsSb/InAsSbP double-heterostructure lasers |
| 000D04 (1999-04) |
| Strain-induced photoreflectance spectra in the vicinity of the E0 transition in GaAs/Si and InP/Si heterostructures |
| 000D07 (1999-04) |
| Optical spectra and electronic structure of indium nitride |
| 000D08 (1999-04) |
| Luminescence and electrical properties of InGaN/AlGaN/GaN light emitting diodes with multiple quantum wells |
| 000D15 (1999-03-08) |
| Charge Conveyance and Nonlinear Acoustoelectric Phenomena for Intense Surface Acoustic Waves on a Semiconductor Quantum Well |
| 000D20 (1999-03) |
| Dopant impurity diffusion from polymer diffusants and its applications in semiconductor device technology. A review |
| 000D21 (1999-03) |
| Bistability of electroluminescence in a type-II AlGaAsSb/InGaAsSb double heterostructure |
| 000D22 (1999-02-25) |
| Observation of a hybridization gap in cyclotron resonance spectra of semimetallic InAs/GaSb quantum wells |
| 000D25 (1999-02) |
| Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates |
| 000D33 (1999-02) |
| Capacitance spectroscopy of deep states in InAs/GaAs quantum dot heterostructures |
| 000D35 (1999-01-01) |
| Electron irradiation effects on the intersubband transitions in InGaAs/AlGaAs multiple quantum wells |
| 000D39 (1999-01) |
| Optical intersubband transitions in strained quantum wells utilizing In1-xGaxAs/InP solid solutions |
| 000E26 (1998-11-10) |
| Dynamic polarization of nuclei in a self-organized ensemble of quantum-size n-InP/InGaP islands |
| 000E29 (1998-11) |
| Interband resonant tunneling in superconductor heterostructures in a quantizing magnetic field |
| 000E31 (1998-10) |
| Polarization of in-plane photoluminescence from InAs/Ga(In)As quantum-well layers grown by metallorganic vapor-phase epitaxy |
| 000E37 (1998-09-15) |
| Zeeman splitting of excitons and biexcitons in single In0.60Ga0.40As/GaAs self-assembled quantum dots |
