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Serveur d'exploration sur l'Indium

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Le cluster Gallium Indium Arsenides Mixed - Quantum well

Terms

75Gallium Indium Arsenides Mixed
41Quantum well
140Indium Antimonides
79N type conductivity
70Magnetic field
38P type conductivity

Associations

Freq.WeightAssociation
220.397Gallium Indium Arsenides Mixed - Quantum well
350.333Indium Antimonides - N type conductivity
280.283Indium Antimonides - Magnetic field
150.280Magnetic field - Quantum well
150.274N type conductivity - P type conductivity
170.235Gallium Indium Arsenides Mixed - Magnetic field
150.202Magnetic field - N type conductivity
Documents par ordre de pertinence
001684 (1992) Excitons in dense two-dimensional electron-hole magnetoplasmas
001698 (1992) Direct observation of magnetoplasmon-phonon coupled modes in the magnetophotoluminescence spectra of the two-dimensional electron gas in InxGa1-xAs/GaAs quantum wells
001724 (1991) Transverse conductivity of semiconductors in an ultraquantum magnetic field in the case of Boltzmann statistics
001780 (1991) Magnetoluminescence study of many-body effects in homogeneous quasi-two-dimensional electron-hole plasma in undoped InxGa1-xAs/InP single quantum wells
001781 (1991) Magnetic field increased LO-phonon Raman scattering in selectively doped n-AlGaAs/InGaAs/GaAs quantum well
001817 (1991) Excitons and deexcitons in a neutral 2D magnetoplasma with an integer filling of Landau levels : experiment and theory
001818 (1991) Excitonic insulator in a magnetized quasi-2D plasma
001819 (1991) Excitonic effects in low density electron-hole plasma in InGaAs/InP quantum wells under magnetic field
001828 (1991) Effective carrier masses in a neutral quasi-two-dimensional electron-hole plasma in InGaAs/GaAs quantum wells with a nondegenerate valence band
001857 (1991) Absorption of light in compensated semiconductors with the Kane band structure
001861 (1990) Ultrasound absorption in lightly doped compensated n-type indium antimonide at ultralow temperatures
001905 (1990) Localization effects, energy relaxation, and electron and hole dispersion in selectively doped n-type AlyGa1-yAs/InxGa1-xAs/GaAs quantum wells
001914 (1990) Influence of interparticle interactions on the effective masses of carriers in a quasi-two-dimensional electron-hole plasma in quantum wells in In0.53Ga0.47As/InP
001946 (1990)
001952 (1989) The charge state of hydrogen and hydrogen diffusion in InP and InGaAs
001963 (1989) Magneto-resonant absorption from a local center in degenerate n-InSb
001967 (1989) Interference resonance photocurrent in n-InSb
001986 (1989)
001987 (1989)
001992 (1989)
001B27 (1988)
001B40 (1988)
001B43 (1988)
001C16 (1987)
001C53 (1987)
001C99 (1986) Precise measurement of the free electron g-factor in InSb
001D00 (1986) Photoluminescence and laser emission in In0.53Ga0.47As/InP layers
001D60 (1986)
001D79 (1985)
001E03 (1985)
001E17 (1985)
001E50 (1984)
000172 (2009) Circularly polarized electroluminescence in LED heterostructures with InGaAs/GaAs quantum well and Mn 6-layer
000210 (2008) Emission properties of InGaAs/GaAs heterostructures with δ-doped barrier
000661 (2003) High-mobility InAs/AlSb heterostructures for spintronics applications
001506 (1993) The increase of the binding probability of free electron and hole into Wannier-Mott exciton in a strong magnetic field
001549 (1993) Magnetophotoluminescence of MBE-grown InSb and InAs
001564 (1993) InGaP/GaAs/InGaAs quantum well lasers prepared by atmospheric pressure metalorganic chemical vapour deposition
001603 (1992) The conductivity anisotropy in uniaxially stressed p-InSb
001605 (1992) Temperature dependence of the binding energy of Wannier-Mott excitons in quantum wells
001629 (1992) Pressure spectroscopy of impurity states and band structure of bismuth telluride
001636 (1992) Photoelectron phenomena in GaAs layers with a built-in surface quantum heterowell
001651 (1992) Metal-insulator transition in heavily doped indium antimonide subjected to a magnetic field
001655 (1992) Magnetoluminescence study of many-body effects in a dense electron-hole plasma of strained InxGa1-xAs/GaAs quantum wells
001670 (1992) Influence of the surface electric field on carrier transfert into InGaAs/GaAs single quantum wells
001677 (1992) Gunn diodes made of n-InGaAs/n+InP heterostructures
001696 (1992) Effects of the interaction of intrasubband and intersubband magnetoplasmons in the emission spectrum of a quasi-2D electron gas
001700 (1992) Determination of the homogeneity of quantum wells in the InGaAs/GaAs system from photomodulation spectra
001764 (1991) Parameters of the energy band structure of epitaxial films in In1-xGax/InP heterojunctions
001765 (1991) Oscillatory photoluminescence excitation in InGaAs/GaAs strained-layer quantum well structures
001774 (1991) Mechanisms of the influence of hydrogen on the electrical and photoelectric properties of Pd-p(n)-InP and Pd-n-GaP diode structures
001776 (1991) Mechanism of frequency conversion in an n-type InSb mixer
001777 (1991) Many-body effects of a dense two-dimensional electron-hole system in a strained InxGa1-xAs quantum well
001779 (1991) Magnetophonon resonance on three types of carriers in p-InSb
001782 (1991) Low temperature resistance of p-InSb(Mn)
001785 (1991) Large-scale impurity potential and nature of the main low-temperature luminescence line of pure n-InSb crystals
001808 (1991) High hydrostatic pressure study of InGaAs/GaAs quantum wells of widths 30 to 160 Å
001810 (1991) Giant photocurrent in 2D structures in a magnetic field parallel to the 2D layer
001831 (1991) Drag photocurrent in a 2D electron gas near the cyclotron resonance and its first subharmonic
001838 (1991) Cooling of electrons and noise in heating electric fields
001848 (1991) Behavior of impurities of p-type GaInSbAs solid solutions
001849 (1991) Band offset determination from conduction band filling in InGaAs/GaAs quantum wells
001851 (1991) Auger electron spectroscopy of semiconductor crystals after the application of a pulsed magnetic field
001894 (1990) Photoelectric properties of epitaxial GaAs/InGaAs quantum-well heterostructures
001899 (1990) Noise temperature in compensated n-type InSb:Cr
001926 (1990) Dispersion properties of indium antimonide in a strong magnetic field
001931 (1990) Determination of energy spectrum parameters for two-dimensional carriers from the quantum oscillation beating pattern
001974 (1989) Electrophysical properties of the ion-implanted p-InSb
001A06 (1989)
001A22 (1989)
001A86 (1988)
001A92 (1988)
001B26 (1988)
001B34 (1988)
001B36 (1988)
001B38 (1988)
001B47 (1988)
001B56 (1988)
001C02 (1987)
001C03 (1987)
001C12 (1987)
001C32 (1987)
001C33 (1987)
001C48 (1987)
001C56 (1987)
001C57 (1987)
001C64 (1987)
001C78 (1987)
001D25 (1986) Absorption edge of stoichiometric and nonstoichiometric CuInSe2 crystals
001D31 (1986)
001D33 (1986)
001D38 (1986)
001D45 (1986)
001D48 (1986)
001D55 (1986)
001E02 (1985)
001E13 (1985)
001E15 (1985)
001E27 (1985)
001E32 (1984) Studies of the deep levels in p-type InSb under pressure
Wicri

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