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| Crystal structure of CeRu0.88In2 |
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| The crystal structure of Ce16Ru8In37 |
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| Single crystal investigation of the ternary indides Ce2Pd4In5 and CePdIn4 |
| 000263 (2007) |
| Crystal structure of the new ternary compound Ce3Ru2In3 |
| 000270 (2007) |
| Ce2Ru2In3 and Ce3Ru2In2 : Site exchange in ternary indides of a new structure type |
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| Superstructure Ga4InAs5 |
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| Crystal structure of In-based cuprates: (In, Cu)S[Sr]2YCu2O6+δ (1212), (In, Cu)(Sr, Ho)2(Ho, Ce4+)2Cu2O8+δ(1222) |
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| Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates |
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| Complexes of indium trihalogenides with 1,10-Phenanthroline: crystal and molecular structure of [InCl3(phen)H2O], [InCl3(phen)EtOH].EtOH, and [InF3(phen)H2O] |
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| Structural peculiarities of lead-indium alloys |
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| New ternary indide La2Pd3In4 |
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| Phase formation in the Li2Mo0o4-K2MoO4-In2(MoO4)3 system and crystal structures of new compounds K3InMo4O15 and LiK2In(MoO4)3 |
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| Structure of rapidly quenched Ga-free Heusler alloys |
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| Spectroscopic and first-principles studies of boron-doped diamond: Raman polarizability and local vibrational bands |
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| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
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| Effect of InGaN underneath layer on MOVPE-grown InGaN/GaN blue LEDs |
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| Synthesis and crystal structure of three silver indium double phosphates |
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| Structure of InP single crystals irradiated with reactor neutrons |
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| Single crystal investigation of Ce6Pd12In5 |
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| Structural diagnostics of 'quantum' layers by X-ray diffraction and standing waves |
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| The incommensurate structure of K3In(PO4)2 |
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| Phase transition in a tetragonal In90Pb10 alloy under high pressure: a switch from c/a > 1 to c/a < 1 |
| 000717 (2002-09) |
| Synthesis and Crystal Structure of New Double Indium Phosphates MI3In(PO4)2 (MI = K and Rb) |
| 000739 (2002-06-15) |
| LiInSe2: A biaxial ternary chalcogenide crystal for nonlinear optical applications in the midinfrared |
| 000798 (2002) |
| Phase transitions under high pressure in binary Sn alloys (with In, Hg and Ga) |
| 000826 (2002) |
| High-temperature phase transition in the whitlockite-type phosphate Ca9In(PO4)7 |
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| Anisotropy of the Spatial Distribution of In(Ga)As Quantum Dots in In(Ga)As-GaAs Multilayer Heterostructures Studied by X-ray and Synchrotron Diffraction and Transmission Electron Microscopy |
| 000932 (2001) |
| The pillared layered framework of Ba3(In1-xMx)2(HXO4)6 (0 ≤ x ≤ 1; M = Fe, Cr; X = P, As) : synthesis, crystal structure, thermal stability and Mössbauer spectroscopy |
| 000936 (2001) |
| Synthesis and phase composition of NaxMxTi8-xO16(0.67≤x≤2.0; M = Al, Ga, In) |
| 000967 (2001) |
| Novel compounds Sn10In14P22I8 and Sn14In10P21.2I8 with clathrate I structure: Synthesis and crystal and electronic structure |
| 000995 (2001) |
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| 000A08 (2001) |
| Condensed cesium indium phosphates |
| 000A55 (2000-07-20) |
| Structural Characteristics of Multicomponent GaAs-InxGa1 - xAs System from Double-Crystal X-ray Diffractometry Data |
| 000B41 (2000) |
| Structure of polymorphous modifications of double sodium and indium phosphate |
| 000B61 (2000) |
| Mixed-cation cyclohexaphosphates: Synthesis and crystal structure of CsCuInP6O18-II |
| 000B79 (2000) |
| InSb-InAs alloys prepared by rapid quenching (106-108 K/s) |
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| Crystal structure of InBi under pressure up to 75 GPa |
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| X-ray diffraction study of CuInSe2 single crystals |
| 000F19 (1998) |
| Study of In2S3 thin films by diffraction of synchrotron radiation |
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| Crystal structure of Ba5In2Al2ZrO13 |
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| New ternary compounds of indium with calcium (europium) and copper (nickel) |
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| Crystal structure of indium polyphosphate In(PO3)3-C' |
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| Crystal structure of Sm2Co9In3 |
| 000000 (2014) |
| Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin |
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| Synthesis and thermochemistry of new phase BaCe0.7Nd0.2In0.1O2.85 |
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| Hybrid heterostructure with a nanolayer of diluted GaIn(Mn)AsSb compound in a type II broken-gap heterojunction |
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| The CuGaSe2-CuInSe2-2CdS system and single crystal growth of the γ-phase |
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| Nanocrystalline Sn02 and In2O3 as materials for gas sensors: The relationship between microstructure and oxygen chemisorption |
| 000144 (2009) |
| Novel metal-template assembled highly-functionalized cyanoporphyrazine ytterbium and vanadium complexes for potential photonic and optoelectronic applications |
| 000160 (2009) |
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| 000186 (2008) |
| Structural and transport properties of GaAs/δ -Mn/GaAs/In;, Ga1 -x As/GaAs quantum wells |
| 000201 (2008) |
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| 000209 (2008) |
| Energy characteristics of excitons in InGaN/GaN heterostructures |
| 000226 (2007) |
| Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix |
| 000253 (2007) |
| Fe (In) solid solution formation during mechanical attrition |
| 000264 (2007) |
| Control of the morphology of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition |
| 000269 (2007) |
| Characterization of InP porous layer by high-resolution X-ray diffraction |
| 000271 (2007) |
| Cathodoluminescence emission study of nanocrystalline indium oxide films deposited by spray pyrolysis |
| 000272 (2007) |
| Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs |
| 000307 (2006) |
| Near-infrared photoluminescence of vertically aligned InN nanorods grown on Si(111) by plasma-assisted molecular-beam epitaxy |
| 000320 (2006) |
| Electrical and structural properties of InSb crystals irradiated with reactor neutrons |
| 000338 (2005) |
| Synchrotron X-ray topographic study of dislocations and stacking faults in InAs |
| 000363 (2005) |
| Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary |
| 000390 (2005) |
| Activation of aluminum metal and its reaction with water |
| 000408 (2004-05) |
| Determining Parameters of a Multilayer Heterostructure by Joint Analysis of the X-ray Rocking Curves Measured for Various Crystallographic Planes |
| 000435 (2004) |
| XPS and XPD investigation of (1 1 2) CuInSe2 and Cu(InGa)Se2 surfaces |
| 000436 (2004) |
| X-ray diagnostics of heterostructures with quantum dots |
| 000448 (2004) |
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| 000452 (2004) |
| Renewed interest in powder diffraction data indexing |
| 000461 (2004) |
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| 000474 (2004) |
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| 000493 (2004) |
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| 000507 (2003-11) |
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| 000520 (2003-09) |
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| 000557 (2003-04) |
| Photosensitive Structures Based on ZnIn2Se4 Single Crystals |
| 000586 (2003-01-15) |
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| 000593 (2003) |
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| 000602 (2003) |
| Structural perfection of four-layer GaxIn1-xAsyP1-y laser heterostructures |
| 000616 (2003) |
| Preparation and structure of AgGa1-xInxSe2 single crystals |
| 000627 (2003) |
| On the existence of ternary magnetic phases in the In-Cr-Te system |
| 000637 (2003) |
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| 000649 (2003) |
| InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth |
| 000655 (2003) |
| InAs quantum dots in multilayer GaAs-based heterostructures |
| 000664 (2003) |
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| 000676 (2003) |
| Electronic structure and chemical bonding of phosphorus-contained sulfides InPS4, TI3PS4, and Sn2P2S6 |
| 000697 (2003) |
| Adsorptive and electrical properties of InSb-ZnSe films |
| 000704 (2002-12) |
| MBE Growth and Photoluminescent Properties of InAsSb/AlSbAs Quantum Wells |
| 000714 (2002-10) |
| The Effect of Pulsed Magnetic Fields on the Real Structure of Indium Arsenide Crystals |
| 000779 (2002) |
| Whitlockite-related phosphates Sr9A(PO4)7(A=Sc, Cr, Fe, Ga, and In): Structure refinement of Sr9In(PO4)7 with synchrotron X-ray powder diffraction data |
| 000780 (2002) |
| Volume effect on the valence transition in Yb1-xRxInCu4 (R=Y, La, Ce, Lu) compounds |
| 000788 (2002) |
| Structural transformations in the In5Bi3 compound under high pressure |
| 000803 (2002) |
| On the theory of X-ray diffraction and X-ray standing waves in the multilayered crystal systems |
| 000810 (2002) |
| Molecular beam epitaxy of low-strained CdSe/CdMgSe heterostructures on InAs(001) substrates |
| 000830 (2002) |
| Experimental and theoretical X-ray K-spectra of sulfur of zincblende-based compounds AgGaS2-CdGa2S4-InPS4 |
