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Serveur d'exploration sur l'Indium

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Le cluster Gallium Arsenides - Indium Arsenides

Terms

148Gallium Arsenides
140Indium Arsenides
191Indium Phosphides
24Gallium Phosphides
29Iron
36Gallium Antimonides
44Irradiation

Associations

Freq.WeightAssociation
620.431Gallium Arsenides - Indium Arsenides
410.244Gallium Arsenides - Indium Phosphides
210.310Gallium Phosphides - Indium Phosphides
190.255Indium Phosphides - Iron
170.239Gallium Antimonides - Indium Arsenides
170.185Indium Phosphides - Irradiation
240.147Indium Arsenides - Indium Phosphides
Documents par ordre de pertinence
001582 (1993) Crystallization of overcooled A3B5 compounds
001B39 (1988)
000034 (2012) Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide
000128 (2010) Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity
000149 (2009) Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000173 (2009) Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique
000208 (2008) Frequency tuning of diode laser radiation by surface acoustic wave
000211 (2008) Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systems : Heterostructure Terahertz Devices
001131 (1997) Characterisation of the LPE grown InGaAsP/InP hetero-structures : IR-LED at 1.66 μm used for the remote monitoring of methane gas
001527 (1993) Profiles of isotopes in III-V semiconductor compounds formed as a result of bombardment with high-energy α particles
001740 (1991) Structure of the wave functions of impurity centers of transition elements in III-V compounds
001B29 (1988)
001C70 (1987)
000D87 (1999) III-V compounds for solar cell applications : Thin film solar cells
000D91 (1999) High - brightness LEDs as alternative to lasers and traditional illuminants
001269 (1996) A3B5 based solar cells and concentrating optical elements for space PV modules
001570 (1993) Extrinsic recombination processes in proton irradiated InAs/GaAs heterostructures grown by molecular beam epitaxy
001661 (1992) Long-range effects in semiinsulating semiconductors GaAs and InP irradiated with argon ions
001772 (1991) Molten-solid phase equilibria in the Pb-InSb-GaSb and Pn-InAs-GaAs systems
001862 (1990) UPS study of the metal-semiconductor interface Ag-A3 B5 (GaAs, InAs, InP, InSb) formation at 10 K
001863 (1990) Transmutation doping of indium phosphide and gallium arsenide due to protons and α-particles
001889 (1990) Radiation degradation of solar cells based on InP-CdS heterojunctions
001982 (1989) Anharmonic effects in semiconductors with sphalerite structure from data of pressure and temperature dependences of elastic constants
001998 (1989)
001A28 (1989)
001B17 (1988)
001B88 (1987) Optical transitions on (1 1 0) surfaces of III-V compounds
001C93 (1986) The origin of the minority impurity states in heavily doped semiconductors
001D40 (1986)
001D52 (1986)
001D83 (1985)
001D93 (1985)
001E33 (1984) Stopping cross sections of 80- to 500-keV protons in phosphorus compounds
000047 (2012) Effects of phonon confinement on high-electric field electron transport in an InGaAs/InAlAs quantum well with an inserted InAs barrier
000064 (2011) Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
000066 (2011) Quantum dot laser
000068 (2011) Photoreflectance study of indium segregation in the InGaAs quantum well
000088 (2011) 115 fs pulses from Yb3+:KY(WO4)2 laser with low loss nanostructured saturable absorber
000093 (2010) Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system
000095 (2010) Semiconductor Nanostructures Modified by the UV Laser Radiation
000110 (2010) Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
000120 (2010) Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000124 (2010) Compact optoelectronic oscillators using WGM modes on fused silica and MgF2 mini-disks resonators
000136 (2009) Stimulated-emission wavelength switching in optically pumped InGaAs/AIGaInAs laser heterostructures
000156 (2009) High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000157 (2009) High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000174 (2009) Cavity-enhanced emission in electrically driven quantum dot single-photon-emitters
000189 (2008) Quantum dot photonics : edge emitter, amplifier and VCSEL
000190 (2008) Quantum dot diode lasers for optical communication systems
000192 (2008) Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power
000198 (2008) Modifiée! transfer matrix method for quantum cascade lasers
000203 (2008) Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
000213 (2008) Double integrated nanostructures for pulsed 0.9-μm laser diodes
000218 (2008) Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000261 (2007) Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping
000D49 (1999) Surface properties of indium pnictides
000D74 (1999) Modelling of the current-voltage characteristics of InAs/AlGaSb/GaSb double barrier diodes with interband resonant tunnelling
000D85 (1999) InAsSb/InAsSbP light emitting diodes for the detection of CO and CO2 at room temperature
000F30 (1998) Optical studies of modulation doped InAs/GaAs quantum dots
000F35 (1998) Low temperature transport properties of InAs/GaAs structures with quantum dots
000F37 (1998) Lateral association of vertically-coupled quantum dots
000F39 (1998) LM-HEMT and P-HEMT-technology for ultra high frequency devices
000F41 (1998) Interface-induced phenomena in type II antimonide-arsenide heterostructures
000F45 (1998) InAsSbP/InAs LEDs for the 3.3-5.5μm spectral range
000F48 (1998) GaSb based PV cells with Zn-diffused emitters
000F49 (1998) GaInAsSb/GaSb double heterostructure light emitting diodes fabricated by LPE from Sb-rich melts
000F54 (1998) Fast tuning of 3.3 μm InAsSb/InAsSbP diode lasers using nonlinear optical effects
001078 (1997) Tandem solar cells based on A3B5 compounds
001107 (1997) Mechanisms of acoustooptical interaction in resonant systems based on AlGaInAs
001134 (1997) A new approach to the cap layer thinning of GaAs based heterostructures with near surface quantum wells
001339 (1995) Wavelength and polarisation switching in InGaAsP/InP DFB lasers
001343 (1995) The influence of hydrogen plasma treatment on reverse currents in InGaP and InGaAlP
001355 (1995) Rare-earths: application in bulk III-V semiconductor crystal growth technology
001356 (1995) Rare-earth elements in the technology of InP, InGaAsP and devices based on these semiconductor compounds
001387 (1995) Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP
001476 (1994) Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation
001485 (1994) Generation of 110 GHz train of subpicosecond pulses in 1.535 μm spectral region by passively modelocked InGaAsP/InP laser diodes
001504 (1993) Thermodynamic calculation of deviations from stoichiometry in InAs1-xPx solid solutions
001511 (1993) Temperature dependence of the photoluminescence of modified InP:Sn crystals
001539 (1993) Phase diagrams of the ternary systems Zn(Cd)-AIII-BV
001543 (1993) Nano- and picosecond 3 μm Er:YSGG lasers using InAs as passive Q-switchers and mode-lockers
001594 (1992) p-n junction depth profiling and conductivity type determination using auger electron spectroscopy
001596 (1992) Tunnelling processes in broken-gap heterostructures
001597 (1992) Transmutation doping and Fermi-level stabilization in neutron-irradiated InP
001600 (1992) Thermal wave measurement of ion implanted semiconductors in the mirage effect geometry
001615 (1992) Spectrum of shallow donor states in (GaAs)n(InAs)m superlattices
001627 (1992) Quasiparticle tunneling effects in structures based on type II heterojunctions
001655 (1992) Magnetoluminescence study of many-body effects in a dense electron-hole plasma of strained InxGa1-xAs/GaAs quantum wells
001672 (1992) Influence of sulfiding on the state of the surface and photoelectric properties of InP and GaAs
001702 (1992) Cyclotron resonance in (GaAs)n(InAs)m superlattices
001707 (1992) Composition of the vapour phase in the In-As-P ternary system
001719 (1992)
001741 (1991) Spectra of the surface photo-emf developed by p-type InP (100) crystals with submonatomic copper films
001743 (1991) Some effects influencing the distribution profiles of implanted ions in crystalline semiconductor III-V targets after ion implantation
001757 (1991) Polarization of the luminescence emitted from the surface of III-V heterostructure with a profiled substrate
001760 (1991) Photoluminescence of (InAs)n(GaAs)m superlattices under stress
001763 (1991) Passive mode locking and Q switching of an erbium 3 μm laser using thin InAs epilayers growth by molecular beam epitaxy
001766 (1991) Optical vibrational modes in thin GaAs and InAs films
001770 (1991) On the nature of radiation defects responsible for fermi level pinning effect in InP
Wicri

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