| 000B68 (2000) |
| LPE growth of GaSb and Sb-based solid solutions |
| 001393 (1995) |
| Conditions for LPE growth of InAs1-x-ySbxBiy/InSb heterostructures |
| 000451 (2004) |
| Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs |
| 000844 (2002) |
| Determination of the melt undercooling required for producing AlxGayIn1-x-ySb1-zBiz/InSb heterostructures |
| 000D92 (1999) |
| Growth of Ga1-xInxAsySb1-y solid solutions from the five-component Ga-In-As-Sb-Pb melt by liquid phase epitaxy |
| 000F75 (1998) |
| AlGaAsSb and AlGaInAsSb growth from Sb-rich solutions |
| 001113 (1997) |
| InGaAsSb growth from Sb-rich solutions |
| 001324 (1995-04) |
| Observation of an electroluminescence of confined carriers at single p-GaInAsSb/ p-InAs type-II broken-gap heterojunctions |
| 001325 (1995-04) |
| GaInAsSb/InAs heterojunctions |
| 001565 (1993) |
| Impurity distribution near a p-GalnAsSb/p-GaAlAsSb heterojunction |
| 000002 (2013) |
| Uniform InSb quantum dots buried in narrow-gap InAs(Sb,P) matrix |
| 000023 (2013) |
| Electronic properties of a single heterojunction in InSb/InAs quantum dot system |
| 000363 (2005) |
| Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary |
| 000594 (2003) |
| Two-dimensional semimetal channel in a type II broken-gap GaInAsSb/InAs single heterojunction |
| 000644 (2003) |
| Interface luminescence and lasing at a type II single broken-gap heterojunction |
| 000785 (2002) |
| Synthesis and optical absorption of solid solutions between InSb and II-VI compounds |
| 000952 (2001) |
| Preparation, structure, and electrical properties of thin In1-xCdxSb (x = 0.001-0.003) films |
| 000966 (2001) |
| Numerical analysis of the energy-band diagram of type-II p-GaInAsSb/p-InAs heterojunction and size-quantization levels at the interface |
| 000978 (2001) |
| MBE growth and luminescence properties of hybrid Al(Ga)Sb/InAs/Cd(Mg)Se heterostructures |
| 000D51 (1999) |
| Some perspectives and peculiarities of the LPE growth of multicomponent Sb-based solid solutions from pentanary liquid phases |
| 000D81 (1999) |
| Isoperiodical heterostructures GaInAsSb/GaSb grown by LPE from Sb-rich melts in spinodal decomposition area |
| 000F42 (1998) |
| Interband tunnelling in semiconductor heterostructures |
| 001098 (1997) |
| Phonon-assisted interband tunnelling in single-barrier structures with type II heterojunctions |
| 001178 (1996-06) |
| High carrier mobility in p-type GaInAsSb/p-InAs heterostructures |
| 001200 (1996-03) |
| Tunnel-injection laser based on a single p-GaInAsSb/p-InAs type-II broken-gap heterojunction |
| 001275 (1995-12) |
| Characteristic features of the temperature dependence of the threshold current density of GaInAsSb double-heterostructure lasers with a thin active region |
| 001307 (1995-07) |
| Dislocation structure of InAs1-x-ySbxBiy/InSb heterostructures |
| 001332 (1995-02) |
| Strained thin-layer InAs1-x-ySbxBiy/InSb heterostructures: calculation of certain physical properties |
| 001434 (1994-06) |
| Recombination near an N-n-GaSb/GaInAsSb heterojunction |
| 001467 (1994) |
| Type II heterojunctions in the GaInAsSb/GaSb system |
| 001482 (1994) |
| Influence of pressure and temperature on the thermal conductivity of antimonides of gallium and indium and of solid solutions based on them |
| 001551 (1993) |
| Low-threshold long-wave lasers (λ=3.0-3.6 μm) based on III-V alloys |
| 000011 (2013) |
| TEM-study of free-standing self-assembled InSb quantum dots grown on InAs surface |
| 000065 (2011) |
| Quantum dots and quantum dashes in the narrow-gap InSb/InAsSbP system |
| 000083 (2011) |
| Curvature-tuned InAs-based shells containing two-dimensional electron gas |
| 000091 (2010) |
| Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction |
| 000150 (2009) |
| InSb quantum dots and quantum rings on InAs-rich surface |
| 000151 (2009) |
| InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix |
| 000183 (2008) |
| Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution |
| 000195 (2008) |
| Novel materials GaInAsPSb/GaSb and GaInAsPSb/InAs for room-temperature optoelectronic devices for a 3-5 μm wavelength range (GaInAsPSb/GaSb and GaInAsPSb/InAs for 3-5 μm) |
| 000207 (2008) |
| Growth striations and dislocations in highly doped semiconductor single crystals |
| 000221 (2007) |
| Theoretical confirmation of the crystallization of a compound alloy using the AHP crystal growth method |
| 000248 (2007) |
| High-density InSb-based quantum dots emitting in the mid-infrared |
| 000390 (2005) |
| Activation of aluminum metal and its reaction with water |
| 000460 (2004) |
| New peculiarities of interband tunneling in broken-gap heterostructures |
| 000478 (2004) |
| Electronic structures and transport properties of broken-gap heterostructures |
| 000494 (2004) |
| A self-consistent investigation of the semimetal-semiconductor transition in InAs/GaSb quantum wells under external electric fields |
| 000616 (2003) |
| Preparation and structure of AgGa1-xInxSe2 single crystals |
| 000618 (2003) |
| Powerful InAsSbP/InAsSb light emitting diodes grown by MOVPE |
| 000661 (2003) |
| High-mobility InAs/AlSb heterostructures for spintronics applications |
| 000682 (2003) |
| Effect of superstoichiometric Sb content on the electrical properties of InSb/α-Al2O3 photoconductive detectors |
| 000687 (2003) |
| Crystal structure and electrical parameters of In-doped PbTe/Si films prepared by modified HWE technique |
| 000696 (2003) |
| AlyIn1-ySb1-xBix/InSb photodetecting superlattices |
| 000697 (2003) |
| Adsorptive and electrical properties of InSb-ZnSe films |
| 000731 (2002-08) |
| Influence of Tellurium Impurity on the Properties of Ga1 - XInXAsYSb1 - Y (X > 0.22) Solid Solutions |
| 000781 (2002) |
| Type II GaSb based photodiodes operating in spectral range 1.5-4.8 μm at room temperature |
| 000799 (2002) |
| Pb and In codeposition in the vacuum growth of PbTe(In) films on Si substrates |
| 000808 (2002) |
| New anion-deficient cubic perovskites: Ba2In1-xCo1+xO5+δ (0 ≤ x ≤ 0.8) and Ba2-xLaxCoInO5+δ (0.2 ≤ x ≤ 0.8) |
| 000821 (2002) |
| Influence of band state mixing on interband magnetotunnelling in broken-gap heterostructures |
| 000832 (2002) |
| Energy relaxation time and microwave noise in InAs/AlSb/GaSb/GaAs heterostructures |
| 000847 (2002) |
| Control by an electric field of electron-hole separation in type-II heterostructures |
| 000854 (2002) |
| AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers |
| 000888 (2001-08) |
| The Role of Lead in Growing Ga1 - XInXAsYSb1 - Y Solid Solutions by Liquid-Phase Epitaxy |
| 000892 (2001-07) |
| Ultimate InAsSbP Solid Solutions for 2.6-2.8-μm LEDs |
| 000902 (2001-05) |
| Light Emitting Diodes for the Spectral Range λ = 3.3-4.3 μm Fabricated from InGaAs and InAsSbP Solid Solutions: Electroluminescence in the Temperature Range of 20-180°C (Part 21) |
| 000929 (2001) |
| Verification of the Thomas theoretical framework for A-substituted PbBnNbmO3 relaxor ferroelectrics |
| 000932 (2001) |
| The pillared layered framework of Ba3(In1-xMx)2(HXO4)6 (0 ≤ x ≤ 1; M = Fe, Cr; X = P, As) : synthesis, crystal structure, thermal stability and Mössbauer spectroscopy |
| 000936 (2001) |
| Synthesis and phase composition of NaxMxTi8-xO16(0.67≤x≤2.0; M = Al, Ga, In) |
| 000937 (2001) |
| Surface segregation in group-III nitride MBE |
| 000949 (2001) |
| Quantum magnetotransport at a type II broken-gap single heterointerface |
| 000A02 (2001) |
| Effect of low-temperature diffusion annealing on the properties of PbSnTe(In) epilayers |
| 000A15 (2001) |
| A new method for growing thin layers of solid solutions between IV-VI compounds |
| 000A28 (2000-12) |
| Type II Broken-Gap InAs/GaIn0.17As0.22Sb Heterostructures with Abrupt Planar Interface |
| 000A38 (2000-11) |
| Epitaxial Deposition of InGaAsP Solid Solutions in the Miscibility Gap |
| 000B35 (2000) |
| Thermal oxidation of V2S5/InP heterostructures in oxygen |
| 000B72 (2000) |
| Interband resonant tunnelling in quantizing magnetic field |
| 000B79 (2000) |
| InSb-InAs alloys prepared by rapid quenching (106-108 K/s) |
| 000B95 (2000) |
| EXAFS and electrical studies of new narrow-gap semiconductors : InTe1-xSex and In1-xGaxTe |
| 000D64 (1999) |
| Physicochemical aspects of adhesion of thin MSb (M = In, Ga, Cd) layers |
| 000D77 (1999) |
| Melt growth of InAs1-xPx crystals under controlled vapor pressure |
| 000D96 (1999) |
| Electroepitaxy : the control of the kinetics and morphology of InSb |
| 000E08 (1999) |
| Cluster model for melting and crystallization of thin InSb, GaSb, CdSb, and Ge layers |
| 000F12 (1998) |
| Vapor-liquid-solid growth of Pb1-xInxTe crystals |
| 000F26 (1998) |
| Point defect clusters in Pb1-xInxTe single crystals revealed by X-ray diffuse scattering method |
| 000F50 (1998) |
| Formation of InSb quantum dots in a GaSb matrix |
| 001025 (1997-07) |
| Formation of multilayer strained-layer heterostructures by liquid epitaxy. II. Simulation of the fabrication of heterostructures based on indium-arsenic-antimony-bismuth solid solutions |
| 001066 (1997) |
| X-ray microanalysis of Pb1-x-zSnxInzTe solid solutions by the relative intensity ratio procedure |
| 001094 (1997) |
| Rapid and high concentrated permeation of Ga into InSb |
| 001155 (1996-09) |
| Photodiodes based on InAs1-xSbx solid solutions for the spectral band in the range 3-5 μm |
| 001172 (1996-07) |
| Lasing inhomogeneities in buried channel lasers with a p-GaInAsSb active region |
| 001190 (1996-05) |
| High-temperature microhardness of AIIIBV semiconductor compounds |
| 001242 (1996) |
| Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4-1.8 eV interval of band gaps |
| 001258 (1996) |
| Cyclotron resonance in InAs quantum wells in tilted magnetic fields |
| 001292 (1995-09) |
| Polarization of the emission from double-heterostructure lasers based on InAsSb/InAsSbP |
| 001294 (1995-09) |
| Computation of the energy spectra of binary semiconductors doped with rare-earth elements |
| 001345 (1995) |
| The T-P phase diagrams of amorphous GaSb, InSb and InAs |
| 001347 (1995) |
| Structure of indium sulfide layers on InAs |
| 001367 (1995) |
| Molecular beam epitaxial growth of InSb/GaAs(100) and InSb/Si(100) heteroepitaxial layers (thermodynamic analysis and characterization) |
| 001392 (1995) |
| Curent transport processes in In2O3-ZnSe-(Zn1-xCdxTe)1-y(In2Te3)y heterostructures |
| 001430 (1994-07) |
| Radiative recombination in heterostructure LEDs based on limiting-composition GaInAsSb |
