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Le cluster Laser diodes - Semiconductor lasers

Terms

51Laser diodes
197Semiconductor lasers
36Threshold current
23Infrared laser
33Output power
66Quantum well lasers
42Current density
57Phosphorus compounds

Associations

Freq.WeightAssociation
480.479Laser diodes - Semiconductor lasers
300.356Semiconductor lasers - Threshold current
230.342Infrared laser - Semiconductor lasers
270.335Output power - Semiconductor lasers
270.237Quantum well lasers - Semiconductor lasers
210.231Current density - Semiconductor lasers
150.142Phosphorus compounds - Semiconductor lasers
Documents par ordre de pertinence
000189 (2008) Quantum dot photonics : edge emitter, amplifier and VCSEL
000203 (2008) Influence of the InGaAs/(Al)GaAs quantum-well heterostructure growth features on the spectral characteristics of laser diodes
000218 (2008) Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure
000219 (2008) A 1.33 μm InAs/GaAs quantum dot laser with a 46 cm-1 modal gain
000241 (2007) MBE-grown metamorphic lasers for applications at telecom wavelengths
000373 (2005) High-performance 640-nm-range GaInP-AlGaInP lasers based on the longitudinal photonic bandgap crystal with narrow vertical beam divergence
000377 (2005) Epitaxial growth of quantum-dot heterostructures on metamorphic buffers
000608 (2003) SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100%
000662 (2003) High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells
000807 (2002) New diode lasers with leaking emission in an optical cavity
000991 (2001) Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
000A18 (2001) 1.3 μm InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
000A19 (2001) 1.3 μm GaAs-based quantum well and quantum dot lasers: Comparative analysis : Special issue papers
000A20 (2001) 'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53-1.55 μm) laser diodes
000B57 (2000) Optical loss in strained quantum-well semiconductor ridge lasers
000B87 (2000) Gaas-based 1.3 μm InGaAs quantum dot lasers : A status report : Special issue papers
000B90 (2000) Experimental study of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well lasers
000C10 (2000) 3.5 W continuous wave operation from quantum dot laser
000D61 (1999) Powerful AlGaAs/InGaAs/GaAs-based diode lasers with a wavelength of 1.06 μm and a reduced divergence in the plane perpendicular to the p - n junction
000089 (2010) Violet-green laser converter based on MBE grown II-VI green lasers with multiple CdSe quantum dot sheets, pumped by InGaN laser diode
000156 (2009) High-power single-mode laser diodes based on carbon-doped quantum-well InGaAs/AIGaAs heterostructures
000157 (2009) High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm
000192 (2008) Optimisation of waveguide parameters of laser InGaAs/AlGaAs/GaAs heterostructures for obtaining the maximum beam width in the resonator and the maximum output power
000213 (2008) Double integrated nanostructures for pulsed 0.9-μm laser diodes
000272 (2007) Beam profile characteristics of InGaAs sub-monolayer quantum-dot photonic-crystal VCSELs
000331 (2006) 1.3-1.5 μm quantum dot lasers on foreign substrates : Growth using defect reduction technique, high-power CW operation, and degradation resistance
000382 (2005) Effect of GaAsP barrier layers on the parameters of InGaAs/AlGaAs laser diodes emitting in the 1050- 1100-nm spectral range
000457 (2004) Optimisation of doping cladding layers in AlGaInP/GaInP laser heterostructures
000600 (2003) Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy
000611 (2003) Recent advances in long wavelength GaAs-based quantum dot lasers
000628 (2003) Non-linear power-current characteristics of quantum well lasers at high injection
000636 (2003) MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates
000647 (2003) Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers
000652 (2003) InAsSb/InAsSbP current-tunable laser with narrow spectral line width
000654 (2003) InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
000699 (2003) 14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers
000764 (2002-03) Analysis of Threshold Current Density and Optical Gain in InGaAsP Quantum Well Lasers
000815 (2002) Low-frequency intensity fluctuations in high-power single-mode ridge quantum-well InGaAs/AlGaAs heterostructure semiconductor lasers
000820 (2002) Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes
000828 (2002) High-power semiconductor 0.89-1.06-μm lasers with a low emission divergence based on strained quantum-well InGaAs/(Al)GaAs structures
000838 (2002) Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors
000856 (2002) 1.3 Micron edge- and surface-emitting quantum dot lasers grown on GaAs substrates
000946 (2001) Radiative inter-sublevel transitions in InGaAs/AlGaAs quantum dots
000A05 (2001) Dependence of the radiation pattern of a leaky-mode, quantum-well heterolaser on the pump current
000B32 (2000) Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode
000B33 (2000) Threshold characteristics of InGaAsP/InP multiple quantum well lasers
000B80 (2000) InGaAs-GaAs quantum dots for application in long wavelength (1.3 μm) resonant vertical cavity enhanced devices : Special issue papers
000C04 (2000) Brightness and filamentation of a beam from powerful cw quantum-well In0.2Ga0.8As/GaAs lasers
000D54 (1999) Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm
000F43 (1998) Injection lasers based on InGaAs quantum dots in an AlGaAs matrix
000F63 (1998) Dynamics of the optical damage of output mirrors of ridge semiconductor lasers based on strained quantum-well heterostructures
001095 (1997) Radiation characteristics of injection lasers based on vertically coupled quantum dots
001200 (1996-03) Tunnel-injection laser based on a single p-GaInAsSb/p-InAs type-II broken-gap heterojunction
001210 (1996-02) An injection heterojunction laser based on arrays of vertically coupled InAs quantum dots in a GaAs matrix
001211 (1996-02) A low-threshold injection heterojunction laser based on quantum dots, produced by gas-phase epitaxy from organometallic compounds
001275 (1995-12) Characteristic features of the temperature dependence of the threshold current density of GaInAsSb double-heterostructure lasers with a thin active region
000010 (2013) The influence of p-doping on two-state lasing in InAs/InGaAs quantum dot lasers
000064 (2011) Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
000110 (2010) Leaky-wave semiconductor laser with improved energetic characteristics and very narrow dirrectional pattern
000120 (2010) Edge-emitting InGaAs/GaAs laser with high temperature stability of wavelength and threshold current
000149 (2009) Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser
000170 (2009) Compact green laser converter with injection pumping, based on MBE grown II-VI nanostructures
000190 (2008) Quantum dot diode lasers for optical communication systems
000208 (2008) Frequency tuning of diode laser radiation by surface acoustic wave
000223 (2007) The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots
000261 (2007) Double-band generation in InGaAs/GaAs diode laser at high pulsed current pumping
000276 (2006) Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots
000277 (2006) Two-frequency coupled-cavity vertical-cavity surface-emitting lasers
000303 (2006) Optical mixing in GaAs/InGaAs/InGaP butt-joint diode lasers : New scheme for the sum-and difference-frequency generation
000312 (2006) Longitudinal photonic bandgap crystal laser diodes with ultra-narrow vertical beam divergence
000322 (2006) Diode laser spectroscopy of H2O and CO2 in the 1.877-μm region for the in situ monitoring of the martian atmosphere
000334 (2005) Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates
000341 (2005) Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum
000342 (2005) Simulation of the material gain in quantum-well InGaAs layers used in 1.06-μm heterolasers
000359 (2005) Non-linear wave mixing in GaAs/InGaAs/InGaP butt-joint diode lasers
000367 (2005) Long-wavelength lasers based on metamorphic quantum dots
000372 (2005) High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system
000384 (2005) Diagnostics of ortho and para water isomers with tunable diode lasers
000387 (2005) Characteristics of MOCVD- and MBE-grown InGa(N)As VCSELs
000403 (2004-06) Electroluminescent Studies of Emission Characteristics of InGaAsN/GaAs Injection Lasers in a Wide Temperature Range
000419 (2004-03) Internal Optical Loss in Semiconductor Lasers
000426 (2004-02) Nonlinear Generation of Far Infrared Mode in Double-Frequency Heterojunction Lasers
000450 (2004) Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure
000510 (2003-11) 1.7-1.8 μm Diode Lasers Based on Quantum-Well InGaAsP/InP Heterostructures
000553 (2003-05) Longwave Generation in Laser Structures Based on InGaAs(N) Quantum Wells on GaAs Substrates
000559 (2003-04) High-Power 1.7-1.8 μm Single-Mode Laser Diodes
000575 (2003-02) Internal Quantum Efficiency of Stimulated Emission of (λ = 1.55 μm) InGaAsP/InP Laser Diodes
000684 (2003) Effect of parasitic elements of a ridge laser on its modulation characteristic
000688 (2003) Comparison of carbon and zinc p-clad doped LP MOCVD grown InGaAs/AlGaAs low divergence high-power laser heterostructures
000710 (2002-11) High Power Single-Mode (λ = 1.3-1.6 μm) Laser Diodes Based on Quantum Well InGaAsP/InP Heterostructures
000745 (2002-05) Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSb/InAsSbP at Low Temperature
000816 (2002) Long-wavelength quantum-dot lasers
000824 (2002) InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with high (88%) differential efficiency
000827 (2002) High-power single-transverse-mode ridge optical waveguide semiconductor lasers
000836 (2002) Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers
000866 (2001-11) MOCVD-Grown Broad Area InGaAs/GaAs/InGaP Laser Diodes
000887 (2001-08) Threshold Characteristics of λ = 1.55 μm InGaAsP/InP Heterolasers
000894 (2001-07) Comparative Analysis of Long-Wavelength (1.3 μm) VCSELs on GaAs Substrates
000962 (2001) Optical phenomena connected with intraband carrier transitions in quantum dots and quantum wells
000985 (2001) InAs/InGaAs quantum dot microcavity diode structures on GaAs substrates emitting in the 1.25-1.33 μm wavelength range
Wicri

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