| 001221 (1996) |
| The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD |
| 001457 (1994-02) |
| Controlling the mode composition of high-power buried InGaAsP/GaAs lasers with a wavelength of 0.8 μm |
| 000602 (2003) |
| Structural perfection of four-layer GaxIn1-xAsyP1-y laser heterostructures |
| 000608 (2003) |
| SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηsti about 100% |
| 000652 (2003) |
| InAsSb/InAsSbP current-tunable laser with narrow spectral line width |
| 000699 (2003) |
| 14XX nm pump lasers for Raman and Er3+ doped fiber amplifiers |
| 000931 (2001) |
| Thermal expansion of gallium and indium phosphides: Thermodynamic evaluation |
| 000A20 (2001) |
| 'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP (λ = 1.53-1.55 μm) laser diodes |
| 000B33 (2000) |
| Threshold characteristics of InGaAsP/InP multiple quantum well lasers |
| 000B42 (2000) |
| Statistical features of degradation of heterojunction lasers during aging and upon irradiation |
| 001109 (1997) |
| LPE growth and characterization of InGaAsP/InP heterostructures: IR light-emitting diodes at 1.66 μm. Application to the remote monitoring of methane gas |
| 001123 (1997) |
| Effects of irradiation on GaAlAs-GaAs and InGaAsP-InP lasers |
| 001129 (1997) |
| Collective superradiation effects in InGaAsP/InP liquid phase epitaxy-grown quasi-0-dimentional nanostructures |
| 001229 (1996) |
| Shear deformation potential of elastically strained InGaP/GaAs(111)B and InGaAsP/GaAs(111)B films |
| 001260 (1996) |
| Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS |
| 001282 (1995-10-23) |
| InGaAsP/GaAs elastically strained quaternary solid solutions with high critical thicknesses grown by liquid phase epitaxy |
| 001370 (1995) |
| Liquid phase epitaxial growth of elastically strained InxGa1-xP and InxGa1-xAsyP1-y solid solutions on GaAs substrates |
| 001385 (1995) |
| Elastically strained InGaAsP films grown by LPE and conception of stress-induced supercooling |
| 001400 (1994-12-01) |
| Hydrogen passivation effects in InGaAlP and InGaP |
| 001497 (1994) |
| A study of laser emission wavelength variations in 1.5 μm InGaAsP/InP BRS laser diodes: theoretical model and experiment |
| 001559 (1993) |
| Investigation of the structure of the conduction band of InAsSbP solid solutions |
| 000290 (2006) |
| Simulations of light -current and spectral characteristics of InGaAlAs/InP semiconductor lasers |
| 000450 (2004) |
| Scanning e-beam pumped resonant periodic gain VCSEL based on an MOVPE-grown GaInP/A1GaInP MQW structure |
| 000451 (2004) |
| Room-temperature photoluminescence of Ga0.96In0.04 As0.11Sb0.89 lattice matched to InAs |
| 000474 (2004) |
| High nitrogen content InGaAsN/GaAs single quantum well for 1.55 μm applications grown by molecular beam epitaxy |
| 000486 (2004) |
| Effect of crystal defects on the electrical behaviour of InP and sige epitaxial structures |
| 000649 (2003) |
| InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth |
| 000650 (2003) |
| InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source |
| 000684 (2003) |
| Effect of parasitic elements of a ridge laser on its modulation characteristic |
| 000692 (2003) |
| Auger recombination in strained InGaAsP quantum wells with eg = 0.7-1.6 eV |
| 000803 (2002) |
| On the theory of X-ray diffraction and X-ray standing waves in the multilayered crystal systems |
| 000842 (2002) |
| Dislocation dipoles in nanoscale films with compositional inhomogeneities |
| 000854 (2002) |
| AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers |
| 000A12 (2001) |
| Carrier relaxation dynamics in self-assembled quantum dots studied by artificial control of nonradiative losses |
| 000D54 (1999) |
| Semiconductor lasers with broad tunnel-coupled waveguides, emitting at a wavelength of 980 nm |
| 000D83 (1999) |
| Interaction of low-density 2DEG with acoustic phonons |
| 000D97 (1999) |
| Electrical conductivity of the mixed molybdates Li2MII2(MoO4)3 (Mii = Cu, Ni, Co) and Li3MIII(MoO4)3 (Miii = Fe, In, Ga) |
| 000E04 (1999) |
| Dielectric spectra and Vogel-Fulcher scaling in Pb(In0.5Nb0.5)O3 relaxor ferroelectric |
| 000F22 (1998) |
| Semiconductor lasers emitting at the 0.98 μm wavelength with radiation coupling-out through the substrate |
| 000F32 (1998) |
| Observation of a martensitic transition in the Raman spectra of spontaneously ordered GaInP alloys |
| 001157 (1996-09) |
| Optical and luminescence properties of stressed layers with quantum wells in GaInAsP/InP heterostructures grown by MOS hydride epitaxy |
| 001171 (1996-07) |
| Maximum working temperature of InAsSb/InAsSbP diode lasers |
| 001190 (1996-05) |
| High-temperature microhardness of AIIIBV semiconductor compounds |
| 001203 (1996-02-26) |
| Modulation bandwidth of high-power single quantum well buried heterostructure InGaAsP/InP (λ=1.3 μm) and InGaAsP/GaAs (λ=0.8 μm) laser diodes |
| 001209 (1996-02) |
| Change in the electronic work function of sulfide-passivated III-V semiconductor surfaces |
| 001236 (1996) |
| Phonon modes of [111] GaP/InP monolayer superlattices in Raman spectra of spontaneously ordered GaInP |
| 001245 (1996) |
| Investigation of the mode structure of InAsSb/InAsSbP lasers with respect to spectroscopic applications |
| 001273 (1995-12) |
| Optical phonons in spontaneously ordered InGaP solid solutions |
| 001295 (1995-08-25) |
| Strong polarization of the photoluminescence of InxGa1-xP grown on (110) GaAs |
| 001318 (1995-05) |
| Sulfide passivation of III-V semiconductors: The starting electronic structure of a semiconductor as a factor in the interaction between its valence electrons and the sulfur ion |
| 001323 (1995-04) |
| Superluminescence polarization and optical-loss anisotropy in an InGaP/GaAs/InGaP waveguide structure |
| 001327 (1995-03) |
| X-ray studies of the ordered structure in epitaxial InxGa1-xP layers |
| 001329 (1995-03) |
| Photoelectric effect in sharp N+-n0-n+ isotypic heterostructures |
| 001333 (1995-02) |
| Radiative recombination processes in double InAsSbP/InAsSb/InAsSbP heterostructures |
| 001369 (1995) |
| Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources |
| 001386 (1995) |
| Effects of rare-earth doping on the properties of bulk crystals of III-V compounds |
| 001405 (1994-11-15) |
| Discriminative temperature dependencies of differential light-scattering cross sections from an electron gas in semiconductors with a nonparabolic dispersion of energy bands |
| 001432 (1994-06) |
| Tunneling-recombination currents in nonideal InGaAsP/InP heterostructures |
| 001433 (1994-06) |
| Temperature dependence of the cross section for light scattering by charge carriers; observation of an acoustic plasmon (review) |
| 001442 (1994-05) |
| Electrical properties of InP-In2S3 heterostructures |
| 001447 (1994-03) |
| Quasiballistic instability in InP structures |
| 001452 (1994-02) |
| Relationship between growth conditions and heterojunction quality in InP/In1-xGaxAs selectively doped heterostructures grown by liquid-phase epitaxy |
| 001453 (1994-02) |
| Quantum wires with controllable conducting-channel width based on In0.53Ga0.47As/InP heterostructures |
| 001487 (1994) |
| Estimation of charge carrier concentration in the fluorite-type Pb1-x-yInx-yBi2yF2+x+y (fixed x, O≤y≤x) solid solution involving two substitutional cations |
| 001537 (1993) |
| Photoelectric properties of Pb1-x-ySnxGeyTe : in epitaxial films |
| 001547 (1993) |
| Mechanism of formation of a sulfide passivating coating on the surfaces of III-V semiconductors |
| 001551 (1993) |
| Low-threshold long-wave lasers (λ=3.0-3.6 μm) based on III-V alloys |
| 001558 (1993) |
| Ion implantation of a donor impurity in indium phosphide |
| 001575 (1993) |
| Electron structure of rare-earth impurities in III-V compounds (a review article) |
| 001592 (1993) |
| 7Li and 31P NMR studies of monoclinic Li3In2(PO4)3 |
| 000000 (2014) |
| Thermoelectrical properties of spray pyrolyzed indium oxide thin films doped by tin |
| 000026 (2013) |
| Ce2PdIng, Ce3PdIn11 and Ce5Pd2In19-members of homological series based on AuCu3- and PtHg2-type structural units |
| 000034 (2012) |
| Plasmonic modulator based on gain-assisted metal-semiconductor-metal waveguide |
| 000041 (2012) |
| Influence of Sn on the thermoelectric properties of (BixSb1-x)2Te3 single crystals |
| 000106 (2010) |
| Nanocrystalline Sn02 and In2O3 as materials for gas sensors: The relationship between microstructure and oxygen chemisorption |
| 000128 (2010) |
| Applying the joint Wigner time-frequency distribution to characterization of ultra-short optical dissipative solitary pulses in the actively mode-locked semiconductor laser with an external single-mode fiber cavity |
| 000132 (2009) |
| Thermoelectric Properties of InSb Nanowires Over a Wide Temperature Range |
| 000135 (2009) |
| Structural features, nonstoichiometry and high-temperature transport in SrFe1-xMoxO3-δ |
| 000149 (2009) |
| Intracavity terahertz difference-frequency generation in an InGaAs-quantum-well two-frequency InGaAsP/InP laser |
| 000155 (2009) |
| High-temperature transport and stability of SrFe1-xNbXO3-δ |
| 000157 (2009) |
| High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm |
| 000173 (2009) |
| Characterization of the time-frequency parameters inherent in the radiation of semiconductor heterolasers using interferometric technique |
| 000205 (2008) |
| Influence of PbZrO3 doping on the structural and magnetic properties of BiFeO3 |
| 000208 (2008) |
| Frequency tuning of diode laser radiation by surface acoustic wave |
| 000209 (2008) |
| Energy characteristics of excitons in InGaN/GaN heterostructures |
| 000223 (2007) |
| The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots |
| 000226 (2007) |
| Surface segregation of Sb atoms during molecular-beam epitaxy of InSb quantum dots in an InAs(Sb) matrix |
| 000242 (2007) |
| Limiting efficiencies of second-harmonic generation and cascaded X(2) processes in quadratically nonlinear photonic nanowires |
| 000245 (2007) |
| Inas and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors |
| 000247 (2007) |
| ITO deposited by pyrosol for photovoltaic applications |
| 000269 (2007) |
| Characterization of InP porous layer by high-resolution X-ray diffraction |
| 000282 (2006) |
| Structure of InP single crystals irradiated with reactor neutrons |
| 000327 (2006) |
| Chemically prepared well-ordered InP(001) surfaces |
| 000330 (2006) |
| 3D unsteady analysis of gas turbulent convection during HPLEC InP growth |
| 000337 (2005) |
| Temperature behavior of hot carrier dynamics in InP quantum dots |
| 000339 (2005) |
| Study of nonlinear-optical characteristics of AgGa1-xInxSe2 crystals |
| 000341 (2005) |
| Spectral perturbations in a semiconductor laser: I. Anomalous splitting in the mode-beating spectrum |
| 000363 (2005) |
| Molecular beam epitaxy of AlInAsSb alloys near the miscibility gap boundary |
| 000365 (2005) |
| MnGeP2 thin films grown by molecular beam epitaxy |
| 000371 (2005) |
| Hole-hole interaction in a strained InxGa1-xAs two-dimensional system |
